SGS Thomson Microelectronics ST901T Datasheet

HIGH VOL TAG E IGN IT ION COIL DR IV ER
HIGH VOLTA GE SP EC IAL DARLING T ON
STRUCTURE
VERY RUGGED BIPOLAR TECHNOLOGY
HIGH OPERATING JUNCTIO N
TEMPERATURE
APPLICATION
HIGH RUGGEDNES S ELECT RO NIC
IGNITION FOR SMALL ENGINES
ST901T
NPN POWER DARLINGTON
3
2
1
DESCRIPTION
The ST901T is a high voltage NPN silicon
TO-220
transistor in monolithic special Darlington configuration mounted in Jedec TO-220 plastic package, designed for applications such as electronic ignition for small engines (scooters, lawnmowers, chainsaws).
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V V V
I
I P
T
Collector- Emitter Voltage (VBE = 0) 500 V
CES
Collector-Emitter Voltage (IB = 0) 350 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 4 A
I
C
Collector Peak Current 8 A
CM
Base Current 0.5 A
I
B
Base Peak Current 2.5 A
BM
Total Dissipation at Tc 25 oC30W
tot
Storage Temperature -65 to 175
stg
Max. Operating Junction Temperature 175
T
j
o
C
o
C
June 1997
1/4
ST901T
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 5
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off Current (I
= 0)
E
Collector Cut-off Current (I
= 0)
B
Emitter Cut-off Current (I
= 0)
C
Collector-Emitter
= 500 V
V
CE
V
= 500 V T
CE
= 350 V
V
CE
V
= 350 V T
CE
= 5 V 10 µA
V
EB
= 125 oC
case
= 125 oC
case
100
0.5
100
0.5
IC = 10 mA L = 10 mH IB = 0 350 V
Sustaining Voltage
V
CE(sat)
Collector-Emitter
IC = 2 A IB = 20 mA 1.3 V
Saturation Voltage
V
Base-Emitter
BE(sat)
IC = 2 A IB = 20 mA 1.8 V
Saturation Voltage
DC Current Gain IC = 2 A VCE =2 V
h
FE
Functional Test V
I
= 4 A VCE =2 V
C
= 24 V V
CC
clamp
= 350 V
1500
500
4A
L = 4 mH
INDUCTIVE LOAD
t
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Storage Time
s
Fall Time
t
f
V
= 12 V V
CC
clamp
L = 4 mH I
= 2 A IB = 20 mA
C
V
= -3 V
BE
= 250 V
15
1.5
µA
mA
µA
mA
µs µs
2/4
Loading...
+ 2 hidden pages