Datasheet ST25W16, ST25C16, ST24W16, ST24C16 Datasheet (SGS Thomson Microelectronics)

with User-Defined Block Write Protection
1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DAT A RE TENTION
SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24x16 versions – 2.5V to 5.5V for ST25x16 versions HARDWARE WRITE CONT ROL VERSIONS:
ST24W16 and ST25W16 TWO WIRE SERIAL INTERFACE, FULLY I2C
BUS COMPATIBLE BYTE and MULTIBYTE WRITE (up to 8
BYTES) for the ST24C16 PAGE WRITE (up to 16 BYTES) BYTE, RANDOM and SEQUENTIAL READ
MODES SELF TIMED PROGRAMING CYCLE AUTOMATIC ADDRESS INCREME NTING ENHANCE D ESD/LATCH UP
PERFORMANCES
ST24C16, ST25C16
ST24W16, ST25W16
16 Kbit Serial I2C Bus EEPROM
8
1
PSDIP8 (B)
0.25mm Frame
Figure 1. Logic Diagram
8
1
SO8 (M)
150mil Width
DESCRIPTION
This specification covers a range of 16 Kbit I
2
C bus EEPROM products, the ST24/25C16 and the ST24/25W16. In the text, products are referred to as ST24/25x16 where "x" is: "C" for Standard ver­sion and "W" for hardware Write Control version.
The ST24/25x16 are 16 Kbit electrically erasable programmable memories (EEPROM), organized as 8 blocks of 256 x8 bits. These are manufactured in STMicroelectronics’s Hi-Endurance Advanced CMOS technology which guarantees an endur-
T ab le 1. Signal Names
PRE Write Protect Enable PB0, PB1 Protect Block Select SDA Serial Data Address Input/Output SCL Serial Clock
MODE WC Write Control (W version)
V
CC
V
SS
Multybyte/Page Write Mode (C version)
Supply Voltage Ground
V
CC
PB0-PB1 SDA
PRE
SCL
MODE/WC*
Note:
WC signal is only available for ST24/25W16 products.
ST24x16 ST25x16
V
SS
AI00866B
February 1999 1/17
ST24/25C16, ST24/25W16
Figure 2A. DIP Pin Connections
ST24x16 ST25x16
1
PRE V
2 3
PB1
4
SS
Table 2. Absolute Maximum Ratings
Symbol Parameter Value Unit
T
A
Ambient Operating Temperature –40 to 125
8 7 6 5
AI00867B
CC
MODE/WCPB0 SCL SDAV
(1)
Figure 2B. SO8 Pin Connections
ST24x16 ST25x16
PRE V
1 2
PB1
SS
3 4
8 7 6 5
AI00500B
CC
MODE/WCPB0 SCL SDAV
C
°
T
STG
T
LEAD
V
IO
V
CC
V
ESD
Notes:
1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refe r also to t he STM icro ele ctr oni cs SURE Pro gr am and other relevant quality documents .
2. 100pF through 1500Ω; MIL-STD-883C, 3015.7
3. 200pF through 0Ω; EIAJ IC-121 (condition C)
DESCRIPTION (cont’d) carry a built-in 4 bit, unique device identification ance of one million erase/write cycles with a data
retention of 40 years. The ST25x16 operates wit h a power supply value as low as 2.5V. Both Plastic Dual-in-Line and Plastic Small Outline packages are available.
The memories are compatible with the I ard, two wire serial interface which uses a bi-direc­tional data bus and serial clock. The memories
Storage Temperature –65 to 150 Lead Temperature, Soldering (SO8)
Input or Output Voltages –0.6 to 6.5 V Supply Voltage –0.3 to 6.5 V Electrostatic Discharge Voltage (Human Body model) Electrostatic Discharge Voltage (Machine model)
(PSDIP8)
(3)
code (1010) corresponding to the I tion. The memories behave as slave devices in the
2
C protocol with all memory operations synchro-
I
40 sec 10 sec
(2)
215 260
4000 V
500 V
2
C bus defini-
nized by the serial clock . Read and write operations are initiated by a START condition generated by the bus master. The START condition is followed by a
2
C stand-
stream of 4 bits (identification code 1010), 3 block select bits, plus one read/write bit and terminated by an acknowledge bit. When writing data to the
C
°
C
°
2/17
ST24/25C16, ST24/25W16
T ab le 3. Device Select Code
Device Code Memory MSB Addresses RW
Bit b7 b6 b5 b4 b3 b2 b1 b0 Device Select 1 0 1 0 A10 A9 A8 R
Note:
The MSB b7 is sent first.
T ab le 4. Operating Modes
Mode RW bit MODE pin Bytes Initial Sequence
Current Address Read ’1’ X 1 START, Device Select, R
Random Address Read
Sequential Read ’1’ X 1 to 2048 As CURRENT or RANDOM Mode Byte Write ’0’ X 1 START, Device Select, R Multibyte Write ’0’ V Page Write ’0’ V
Note:
X = V
or VIL.
IH
memory it responds to the 8 bits received by as­serting an acknowledge bit during the 9th bit time. When data is read by the bus master, it acknow­ledges the receipt of the data bytes in the sam e way. Data transfers are terminated with a STOP condition.
Data in the 4 upper blocks of t he memory may be write protected. The protected area is programma­ble to start on any 16 byte boundary. The block in which the protection starts is selected by the input pins PB0, PB1. Protection is enabled by setting a Protect Flag bit when the PRE input pin is driven
’0’ ’1’ reSTART, Device Select, R
X1
IH
IL
8 START, Device Select, RW = ’0 ’
16 START, Device Select, RW = ’0’
Power On Reset: V
order to prevent data corruption and inadvertent write operations during power up, a Power On Reset (POR) circuit is implemented. Untill the V voltage has reached the POR threshold value, the internal reset is active: all operations are disabled and the device will not respond to any c ommand. In the same way, when V operating voltage to below the POR threshold value, all operations are disabled and the dev ice will not respond to any command. A stable V must be applied before applying any logic signal.
START, Device Select, R
lock out write pr otec t. In
CC
CC
W = ’1’ W = ’0’, Address,
W = ’1’
W = ’0’
drops down from the
High.
W
CC
CC
3/17
ST24/25C16, ST24/25W16
SIGNALS DESCRIPTION Serial Clock (SCL). The SCL input signal is used
to synchronise all data in and out of the memory . A resistor can be connected from the SCL line to V
CC
to act as a pull up (see Figure 3). Serial Data (SDA). The SDA signal is bi-directional
and is used to transfer data in or out of the memory. It is an open drain output that may be wire-OR’ed with other open drain or open collector signals on the bus. A resistor must be connected from the SDA bus line to V
to act as pull up (see Figure 3).
CC
Protected Block Select (PB0, PB1). PB0 and PB1 input signals select the block in the upper part of the memory where write protection starts. These inputs have a CMOS compatible input level.
Protect Enable (PRE). The PRE input signal, in addition to the status of the Block Address Pointer bit (b2, location 7FFh as in Figure 7), sets the PRE
Mode (MODE). The MODE input is available on pin 7 (see also cally. It must be at V mode, V Write mode. When unconnected, the MODE input is internally read as V
Write Control (
feature is offered only for ST24W16 and ST25W16 versions on pin 7. This feature is usefull to protect the contents of the memory from any erroneous erase/write cycle. The Write Control signal is used to enable ( internal write protection. When unconnected, the WC input is internally read as VIL. The devices with this Write Control feature no longer supports the Multibyte Write mode of operation, however all other write modes are fully supported.
Refer to the AN404 Application Note for more de­tailed information about Write Control feature.
write protection active.
Figure 3. Maximum RL Value versus Bus Capacitance (C
WC feature) and may be driven dynami-
or VIH for the Byte Write
for Multibyte Write mode or VIL for Page
IH
IL
(Multibyte Write mode).
IH
WC). An hardware Write Control
WC at VIH) or disable (WC at VIL) the
) for an I2C Bus
BUS
20
V
CC
16
R
12
max (k)
L
R
8
4
0
VCC = 5V
100 200 300 400
C
(pF)
BUS
MASTER
SDA
SCL
R
BUS
L
C
BUS
AI01100
L
C
4/17
ST24/25C16, ST24/25W16
T able 5. Input Parameters
(1)
(TA = 25 °C, f = 100 kHz )
Symbol Parameter Test Condition Min Max Unit
C
IN
C
IN
Z
WCL
Z
WCH
t
LP
Note:
1. Sampled only, not 100% tested.
Input Capacitance (SDA) 8 pF Input Capacitance (other pins) 6 pF WC Input Impedance (ST24/25W16) VIN ≤ 0.3 V WC Input Impedance (ST24/25W16) VIN ≥ 0.7 V Low-pass filter input time constant
(SDA and SCL)
CC
CC
520k
500 k
100 ns
T ab le 6. DC Characteristics
(T
= 0 to 70 °C or –40 to 85 °C; VCC = 4.5V to 5.5V or 2.5V to 5.5V)
A
Symbol Parameter Test Condition Min Max Unit
I
LI
I
LO
I
CC
Input Leakage Current 0V ≤ VIN ≤ V
Output Leakage Current
Supply Current (ST24 series)
Supply Current (ST25 series) V
0V ≤ V
V
= 5V, fC = 100kHz
CC
(Rise/Fall time < 10ns)
= 2.5V, fC = 100kHz 1 mA
CC
≤ VCC
OUT
SDA in Hi-Z
CC
2
±
2
±
2mA
Ω Ω
A
µ
A
µ
I
CC1
I
CC2
V
V
V
V
V
OL
V
= VSS or VCC,
IN
= 5V
V
Supply Current (Standby) (ST24 series)
V
Supply Current (Standby) (ST25 series)
V
IL
IH
IL
IH
Input Low Voltage (SCL, SDA) –0.3 0.3 V Input High Voltage (SCL, SDA) 0.7 V Input Low Voltage
(PB0 - PB1, PRE, MODE,
WC)
Input High Voltage (PB0 - PB1, PRE, MODE,
WC)
CC
V
= VSS or VCC,
IN
= 5V, fC = 100kHz
CC
V
= VSS or VCC,
IN
= 2.5V
V
CC
V
= VSS or VCC,
IN
= 2.5V, fC = 100kHz
CC
CC
–0.3 0.5 V
V
– 0.5 VCC + 1 V
CC
100
300
5
50
CC
µ
µ
µ
µ
VCC + 1 V
A
A
A
A
V
Output Low Voltage (ST24 series) IOL = 3mA, VCC = 5V 0.4 V Output Low Voltage (ST25 series) I
= 2.1mA, VCC = 2.5V 0.4 V
OL
5/17
ST24/25C16, ST24/25W16
T ab le 7. AC Characteristics
(T
= 0 to 70 °C or –40 to 85 °C; VCC = 4.5V to 5.5V or 2.5V to 5.5V)
A
Symbol Alt Parameter Min Max Unit
t
CH1CH2
t
CL1CL2
t
DH1DH2
t
DL1DL1
(1)
t
CHDX
t
CHCL
t
DLCL
t
CLDX
t
CLCH
t
DXCX
t
CHDH
t
DHDL
(2)
t
CLQV
t
CLQX
f
C
(3)
t
W
Notes:
1. For a reSTART condition, or following a write cycle.
2. The minimum value delays the falling/rising edge of SDA away from SCL = 1 in order to avoid unwanted START and/or STOP conditions.
3. In the Multibyte Write mode only, if accessed bytes are on two consecutive 8 bytes rows (5 address MSB are not constant)
the maximum programming time is doubled to 20ms.
t t t t
t
SU:STA
t
HIGH
t
HD:STA
t
HD:DAT
t
LOW
t
SU:DAT
t
SU:STO
t
BUF
t
AA
t
DH
f
SCL
t
WR
R
F
R
F
Clock Rise Time 1 Clock Fall Time 300 ns Input Rise Time 1 Input Fall Time 300 ns Clock High to Input Transition 4.7 Clock Pulse Width High 4 Input Low to Clock Low (START) 4 Clock Low to Input Transition 0 Clock Pulse Width Low 4.7 Input Transition to Clock Transition 2 50 ns Clock High to Input High (STOP) 4.7 Input High to Input Low (Bus Free) 4.7 Clock Low to Next Data Out Valid 0.3 3.5 Data Out Hold Time 300 ns Clock Frequency 100 kHz Write Time 10 ms
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
Tabl e 8. AC Measurement Conditions
Input Rise and Fall Times Input Pulse Voltages 0.2V Input and Output Timing Ref.
Voltages
50ns
0.3V
to 0.8V
CC
to 0.7V
CC
CC
CC
Figure 4. AC Testing Input Output Waveforms
0.8V
6/17
0.2V
CC
CC
0.7V
0.3V
AI00825
CC
CC
DEVICE OPERATION
2
C Bus Background
I The ST24/25x16 support the I
2
C protocol. This protocol defines any device that sends data onto the bus as a transmitter and any device that reads the data as a receiver. The device that controls the data transfer is known as the master and the other as the slave. The master will always initiate a data transfer and will provide the serial clock for syn­chronisation. The ST24/25x16 are always slave devices in all communications.
Start Co nditi on. START is identified by a high to low transition of the SDA line while the clock SCL is stable in the high state. A ST ART condition must precede any command for data transfer. Except during a programming cycle, the ST24/25x16 con­tinuously monitor the SDA and SCL signals for a START condition and will not respond unless one is given.
Figure 5. AC Waveforms
ST24/25C16, ST24/25W16
SCL
SDA IN
SCL
SDA OUT
SCL
tCHCL
tDLCL
tCHDX
START
CONDITION
tCLQV tCLQX
tCLDX
SDA
INPUT
DATA VALID
DATA OUTPUT
SDA
CHANGE
tW
tCLCH
tDXCX
tCHDH
tDHDL
STOP &
BUS FREE
SDA IN
tCHDH
STOP
CONDITION
WRITE CYCLE
tCHDX
START
CONDITION
AI00795B
7/17
ST24/25C16, ST24/25W16
Figure 6. I2C Bus Protocol
SCL
SDA
SCL
SDA
SCL
SDA
START
CONDITION
START
CONDITION
SDA
INPUT
1 23 789
MSB
1 23 789
MSB ACK
SDA
CHANGE
CONDITION
ACK
STOP
STOP
CONDITION
AI00792
Stop Condition. STOP is identified by a low to high transition of the SDA line while the clock SCL is stable in the high state. A STOP condition termi­nates communication between the ST24/25x16 and the bus master. A STOP condition at the end of a Read command forces the standby state. A STOP condition at the end of a Write command triggers the internal EEPROM write cycle.
Acknowledge B it ( ACK). An acknowledge signal is used to indicate a successful data transfer. The bus transmitter, eit her master or s lave, will release the SDA bus after sending 8 bits of data. During the 9th clock pulse period the receiver pulls t he SDA bus low to acknowledge the receipt of the 8 bits of data.
8/17
Data Input. During data input the ST24/25x16 samples the SDA bus signal on the rising edge of the clock SCL. Note that for correct device opera­tion the SDA signal must be stable during the clock low to high transition and the data must change ONLY when the SCL line is low.
Memory Addressing. To start communication be­tween the bus master and the slave ST24/25x16, the master must initiate a START condition. The 8 bits sent after a STA RT c ondition are made up of a device select of 4 bits that identifie the device type (1010), 3 Block select bits and one bit for a READ
W = 1) or WRITE (RW = 0) operation.
(R There are three modes both for read and write.
They are summarised in Table 4 and described hereafter. A communication between the master and the slave is ended with a STOP condition.
Figure 7. Memory Protection
7FFh
700h
Block Select
Protect Location 16 byte
boundary address
b7 b4 b2
0
PB1 PB0
1
Protect Flag Enable = 0 Disable = 1
XX
Block 7
ST24/25C16, ST24/25W16
PB1 PB0
1
1
600h
500h
400h
Write Operations
The Multibyte Write mode (only available on the ST24/25C16 versions) is selected when the MODE pin is at V pin is at V
and the Page Write mode when MODE
IH
. The MODE pin may be driven dynami-
IL
cally with CMOS input levels. Following a START condition the master sends a
device select code with the R
W bit reset to ’0’. The memory acknowledges this and waits for a byte address. The byte address of 8 bits provides ac­cess to any of the 256 bytes of one memory block. After receipt of the byte address the device again responds with an acknowledge.
For the ST24/25W16 vers ions, any write command
WC = ’1’ (during a period of time from the
with ST ART condition untill the end of the Byte Address) will not modify data and will NOT be acknowledged on data bytes, as in Figure 10.
Byte Write. In the Byte Write mode the master sends one data byte, which is acknowledged by the memory. The master then terminates the transfer by generating a STOP condition. The Write mode
Block 6
Block 5
Block 4
1
0
0
AI00870B
0
1
0
is independant of the state of the MODE pin whic h could be left floating if only this mode was to be used. However it is not a recommended operating mode, as this pin has to be connected to either V or VIL, to minimize the stand-by current.
Multibyte Write (ST24/25C16 only). For the Mul­tibyte Write mode, the MODE pin must be at V
IH
The Multibyte Write mode can be started from any address in the memory . The master sends from one up to 8 bytes of data, which are each acknowledged by the memory. The transfer is terminated by the master generating a STOP condition. The duration of the write cycle is t
= 10ms maximum except
W
when bytes are accessed on 2 contiguous rows (one row is 16 bytes), the programming time is then doubled to a maximum of 20ms. W riting more than 8 bytes in the Multibyte Write mode may modify data bytes in an adjacent row (one row is 16 by tes long). However, the Multibyte Write can properly write up to 16 consecutive bytes only if the first address of these 16 bytes is the first address of the row, the 15 following bytes being written in the 15 following bytes of this same row.
IH
.
9/17
ST24/25C16, ST24/25W16
Page Write. For the Page Write mode, the MODE
pin must be at V
. The Page Write mode allows up
IL
to 16 bytes to be written in a single write cycle, provided that they are all located in the same ’row’ in the memory: that is the same Block A ddress bits (b3, b2, b1 of Device Select code in Table 3) and the same 4 MSBs in the B yte Address. The master sends one up to 16 bytes of data, which are each acknowledged by the memory. After each byte is transfered, the internal byte address counter (4 Least Significant Bits only) is incremented. The transfer is terminated by the master generating a STOP condition. Care must be taken to avoid ad­dress counter ’roll-over’ which could res ult in data being overwritten. Note that for any write mode, the generation by the master of the STOP condition starts the internal memory program cycle. All inputs are disabled until the completion of this cycle and the memory will not respond to any request.
Figure 8. Write Cycle Polling using ACK
WRITE Cycle
in Progress
Minimizing System Delay by Polling On ACK.
During the internal Write cycle, the memory discon­nects itself from the bus in order to copy the data from the internal latches to the memory cells. The maximum value of the Write time (t
) is given in the
W
AC Characteristics table, this timing value may be reduced by an ACK polling sequence is sued by the master.
The sequence is: – Initial condition: a Write is in progress (see Fig-
ure 8).
– Step 1: the Master issues a ST A R T condition
followed by a Device Select byte (1st byte of the new instruction).
– Step 2: if the memory is internally writing, no
ACK will be returned. The Master goes back to Step1. If the memory has terminated the in­ternal writing, it will issue an ACK indicating that the memory is ready to receive the sec­ond part of the instruction (the first byte of this instruction was already sent during Step 1).
First byte of instruction with RW = 0 already decoded by ST24xxx
ReSTART
STOP
START Condition
DEVICE SELECT
with RW = 0
ACK
NO
Returned
YES
Next
Operation is
Addressing the
Memory
WRITE Operation
YESNO
Proceed
Send
Byte Address
Proceed Random Address READ Operation
10/17
AI01099B
ST24/25C16, ST24/25W16
Write Protection. Data in the upper four blocks of
256 bytes of the memory may be write protected. The memory is write protected between a boundary address and the top of memory (address 7FFh).The boundary address is user defined by writing it in the Block Address Pointer (location 7FFh).
The Block Address Pointer is an 8 bit EEPROM register located at the address 7FFh. It is com­posed by 4 MSBs Address Pointer, which defines the bottom boundary address, and 4 LSBs which must be programmed at ’0’. This Address Pointer can therefore address a boundary by page of 16 bytes.
The block in which the Block Address Pointer de­fines the boundary of the write pr otected memory is defined by the logic level applied on the PB1 and PB0 input pins:
– PB1 =’0’and PB0 =’0’ select block 4 – PB1 =’0’and PB0 =’1’ select block 5 – PB1 =’1’and PB0 =’0’ select block 6 – PB1 =’1’and PB0 =’1’ select block 7 The following sequence should be used to set the
Write Protection: – write the data to be protected into the top of
the memory , up to, but not including, location 7FFh;
– select the block by hardwiring the signals PB0
& PB1;
– set the protection by writing the correct bottom
boundary address in the Address Pointer (4 MSBs of location 7FFh) with bit b2 (Protect Flag) set to ’0’.
Note that for a correct fonctionality of the memory, all the 4 LSBs of the Block Address Pointer must also be programmed at ’0’. The area will be pro­tected when the PRE input is taken High.
Remark:
The Write Protection is active if and only if the PRE input pin is driven High and the bit 2 of location 7FFh is set to ’0’. In all the other cases, the memory Block will not be protected. While the PRE input pin is read at ’0’ by the memory, the location 7FFh can be used as a normal EEPROM byte.
Caution:
Special attention must be used when using the protect mode together with the Multibyte Write mode (MODE input pin High). If the Multibyte Write starts at the location right below the first byte of the Write Protected area, then the instruction will write over the first 7 bytes of the Write Protected area. The area protected is therefore smaller than the content defined in the location 7FFh, by 7 bytes. This does not apply to the Page Write mode as t he address counter ’roll-over’ and thus cannot go above the 16 bytes lower boundary of the protected area.
Figure 9. Write Modes Sequence (ST24/25C16)
BYTE WRITE DEV SEL BYTE ADDR DATA IN
START
MULTIBYTE AND PAGE WRITE
DEV SEL BYTE ADDR
START
ACK ACK
DATA IN N
ACK ACK ACK
R/W
ACK ACK ACK
DATA IN 1 DATA IN 2
R/W
STOP
STOP
AI00793
11/17
ST24/25C16, ST24/25W16
Figure 10. Write Modes Sequence with Write Control = 1 (ST24/25W16)
WC
ACK ACK NO ACK
BYTE WRITE DEV SEL BYTE ADDR DATA IN
R/W
START
WC
ACK ACK NO ACK
PAGE WRITE DEV SEL BYTE ADDR DATA IN 1
R/W
START
WC (cont'd)
NO ACK NO ACK
PAGE WRITE (cont'd)
DATA IN N
STOP
STOP
DATA IN 2
AI01161B
Read Operation
Read operations are independent of the state of the MODE signal. On delivery, the memory content is set at all "1’s" (or FFh).
Current Address Read. The memory has an in­ternal byte address counter. Each time a byte is read, this counter is incremented. For the Current Address Read mode, following a ST ART c ondition, the master sends a memory address with the R
W bit set to ’1’. The memory acknowledges this and outputs the byte addressed by the internal byte address counter. This counter is then incremented. The master does NOT acknowledge the byte out­put, but terminates the tr ansfer with a STOP con­dition.
12/17
Random Address Read. A dummy write is per­formed to load the address into the address counter (see Figure 1 1). This is followed by another ST AR T condition from the master and the byte address repeated with the R
W bit set to ’1’. The memory acknowledges this and outputs the byte ad­dressed. The master does NOT acknowledge the byte output, but terminates the transfer with a STOP condition.
Sequential Read. This mode can be initiated with either a Current Address Read or a Random Ad­dress Read. However, in this case the master DOES acknowledge the data byte output and the memory continues to output the next byte in se­quence. To terminate the stream of bytes, the master must NOT acknowledge the last byte out-
Figure 11. Read Modes Sequence
ST24/25C16, ST24/25W16
CURRENT ADDRESS READ
RANDOM ADDRESS READ
SEQUENTIAL CURRENT READ
SEQUENTIAL RANDOM READ
ACK
DEV SEL DATA OUT
R/W
START
ACK
DEV SEL * BYTE ADDR
R/W
START
ACK ACK ACK NO ACK
DEV SEL DATA OUT 1
R/W
START
ACK ACK
DEV SEL * BYTE ADDR
NO ACK
STOP
ACK ACK
DEV SEL * DATA OUT
R/W
START
DEV SEL * DATA OUT 1
NO ACK
STOP
DATA OUT N
STOP
ACK ACK
R/W
START
ACK NO ACK
DATA OUT N
STOP
Note:
* The 7 Most Significant bits of DEV SEL bytes of a Random Read (1st byte and 3rd byte) must be identical.
put, but MUST generate a STOP condition. The output data is from consecutive byte addresses, with the internal byte address counter automat­ically incremented after each byte output. After a count of the last memory address, the address counter will ’roll- over’ and the memory will continue to output data.
START
Acknowledge in Read Mode. In all read modes the ST24/25x16 wait for an acknowledge during the 9th bit time. If the master does not pull the SDA line low during this time, the ST24/25x16 terminate the data transfer and switches to a standby state.
R/W
AI00794C
13/17
ST24/25C16, ST24/25W16
ORDERING INFORMATION SCHEME
Example: ST24C16 M 1 TR
Operating Voltage
24 4.5V to 5.5V 25 2.5V to 5.5V
Note:
1. Temperature range on special request only.
Range
C Standard
W Hardware
Write Control
Package
B PSDIP8
0.25mm Frame
M SO8
150mil Width
Temperature Range
1 0 to 70 °C 6 –40 to 85 °C
(1)
3
–40 to 125 °C
Option
TR Tape & Reel
Packing
Devices are shipped from the factory with the memory content set at all "1’s" (FFh).
For a list of available options (Operating Voltage, Package, etc...) or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you.
14/17
ST24/25C16, ST24/25W16
PSDIP8 - 8 pin Plastic S ki nny DIP, 0.25mm lea d f ram e
Symb
Typ Min Max Typ Min Max
A 3.90 5.90 0.154 0.232 A1 0.49 0.019 – A2 3.30 5.30 0.130 0.209
B 0.36 0.56 0.014 0.022 B1 1.15 1.65 0.045 0.065
C 0.20 0.36 0.008 0.014 D 9.20 9.90 0.362 0.390
E 7.62 0.300 – E1 6.00 6.70 0.236 0.264
e1 2.54 0.100 – eA 7.80 0.307 – eB 10.00 0.394
L 3.00 3.80 0.118 0.150
N8 8
mm inches
Drawing is not to scale.
A2
A1AL
B
e1
B1
D
N
C
eA eB
E1 E
1
PSDIP-a
15/17
ST24/25C16, ST24/25W16
SO8 - 8 lead Plastic Small Outline, 150 mils body width
Symb
Typ Min Max Typ Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
B 0.33 0.51 0.013 0.020 C 0.19 0.25 0.007 0.010 D 4.80 5.00 0.189 0.197
E 3.80 4.00 0.150 0.157
e1.27– –0.050– – H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.40 0.90 0.016 0.035
α
N8 8
CP 0.10 0.004
mm inches
0
°
8
°
0
°
8
°
Drawing is not to scale.
16/17
B
SO-a
h x 45˚
A
C
e
CP
D
N
E
H
1
LA1 α
ST24/25C16, ST24/25W16
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2
2
I
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C Components by STMicroelectronics, conveys a license under the Philips
2
C Standard Specifications as defined by Philips.
the I
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