SGS Thomson Microelectronics ST1803DHI Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ NEWSERIES, ENHANCHED
PERFORMANCE
■ FULLYINSULATEDPACKAGE FOR EASY
MOUNTING
■ INTEGRATED FREE WHEELINGDIODE
■ HIGHVOLTAGECAPABILITY
■ HIGHSWITCHING SPEED
■ TIGTHER hfe CONTROL
■ IMPROVEDRUGGEDNESS
APPLICATIONS:
■ HORIZONTAL DEFLECTIONFOR COLOR
TV
DESCRIPTION
The ST1803DHI is manufactured using Diffused
Collector technologyfor more stable operation Vs
base drive circuit variations resulting in very low
worst casedissipation.
ST1803DHI
NPN POWER TRANSISTOR
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
R
=25 Ω
BE
Typ.
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
P
T
January 2000
Collector-Base Volta ge (IE= 0) 1500 V
CBO
Collect or- E m itter Vol tage (IB= 0) 600 V
CEO
Emitter-B a se Voltage (IC=0) 7 V
EBO
I
Collect or Current 10 A
C
Collect or Peak Current (tp<5ms) 15 A
CM
Base Current 4 A
I
B
Total Dissipation at Tc=25oC50W
tot
Stora ge T emperat u re -65 to 150
stg
T
Max. Op er ating J unction Temper a t ure 150
j
o
C
o
C
1/6
ST1803DHI
THERMAL DATA
R
thj-case
Ther mal Resistance Junct ion-cas e Max 2.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
I
V
CE(sat)
V
BE(sat )
CES
Collec t or Cut -of f
Current (V
EBO
Emit ter Cut-of f C urr ent
=0)
(I
C
∗ Co llector- Emit t er
Sat uration Voltage
∗ Base-Emitt er
BE
=0)
V
=1500V
CE
=1500V Tj= 125oC
V
CE
V
= 4 V 130 400 mA
EB
IC=4A IB=0.8A
=4A IB=1.2A
I
C
35
1
2
1.5
IC=4A IB=0.8A 1.2 V
Sat uration Voltage
∗ DC C ur rent Gain IC=1A VCE=5V
h
BV
FE
V
Diode Forw ard Vol t age IF=5A 1.5 2 V
F
Emitt er-Breakdown
EB0
=4.5A VCE=5V
I
C
IE=700mA 7 V
10
4
15 20
9
Voltage
INDUCTIVE LOAD
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle1.5 %
s
t
f
St orage Tim e
Fall Time
IC=4A I
=5 µHVBB=-2.5V
L
B
Bon(END)
f=16KHz
=0.8A
5
0.3
6
0.6
mA
mA
V
µs
µs
SafeOperatingArea ThermalImpedance
2/6
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