SGS Thomson Microelectronics ST1802HI Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ NEWSERIES, ENHANCHED
PERFORMANCE
■ FULLYINSULATEDPACKAGEFOREASY
MOUNTING
■ HIGH VOLTAGECAPABILITY
■ HIGH SWITCHING SPEED
■ TIGTHERhfe CONTROL
■ IMPROVEDRUGGEDNESS
APPLICATIONS:
■ HORIZONTAL DEFLECTIONFOR COLOR
TV
DESCRIPTION
The device is manufactured using Diffused
Collector Technology for more stable operation
Vs base drive circuit variations resulting in very
low worstcase dissipation.
ST1802HI
NPN POWER TRANSISTOR
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
January 2000
Collect or-Base Voltage (IE= 0) 1500 V
CBO
Collect or-Emit ter V oltage (IB= 0) 600 V
CEO
Emitter-Base Vol tage (IC=0) 7 V
EBO
I
Collect or Current 10 A
C
Collect or Peak Cu rr ent (tp<5ms) 15 A
CM
Base Current 4 A
I
B
Tot al Dissipation at Tc=25oC50W
tot
Storage Temperature -65 to 150
stg
T
Max. Ope r ating Junct ion T emperature 150
j
o
C
o
C
1/6
ST1802HI
THERMAL DATA
R
thj-case
Ther mal Resist ance Junction-c a se Max 2.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Un it
I
CES
I
EBO
V
CEO(sus)
Collec t or Cut -off
Current (V
BE
=0)
Emitt er Cut -of f Cu rrent
=0)
(I
C
∗ Collector- Emitt er
V
= 1500 V
CE
= 1500 V Tj=125oC
V
CE
V
=7V 1 mA
EB
I
= 100 m A L = 25 mH 600 V
C
1
2
Sust aining V o lt age
=0)
(I
B
∗ Co llector-E mitter
V
CE(sat)
Saturation Voltage
V
∗ Base-Emi tter
BE(sat)
IC=4A IB=0.8A
=4A IB=1.2A
I
C
IC=4.5A IB=1A 1.2 V
5
1.5
Saturation Voltage
∗ DC C ur rent Gain IC=1A VCE=5V
h
FE
INDUCTIV E LO AD
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle1.5 %
s
t
f
Storage Ti me
Fall Time
=5A VCE=5V 4
I
C
IC=4A I
=5 µHVBB=-2.5V
L
B
f=16KHz
Bon(END)
=1A
25
5
0.3
9
6
0.5
mA
mA
V
µs
µs
Safe Operating Area ThermalImpedance
2/6
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