Datasheet SMP100-270, SMP100-65, SMP100-8, SMP100LC-35, SMP100-120 Datasheet (SGS Thomson Microelectronics)



SMP100-xxx

COMMUNICATIONEQUIPMENT PROTECTION: TRISIL

FEATURES

BIDIRECTIONALCROWBARPROTECTION
VOLTAGERANGE: FROM 8V to 270V
REPETITIVEPEAK PULSECURRENT:

= 100 A (10/1000µs)

I

PP

HOLDINGCURRENT: I
LOWLEAKAGECURRENT:I

DESCRIPTION

The SMP100 series are transient surge ar­restorsusedfortheprotection of sensitive tele­comequipment.

MAINAPPLICATIONS

Any sensitive equipment requiring protection
againstlightningstrikes :

ANALOGAND DIGITALLINE CARDS
MAINDISTRIBUTIONFRAMES
TERMINALSAND TRANSMISSION

EQUIPMENT

GAS-TUBEREPLACEMENT

BENEFITS

= 150mAor 225mA

H

=2µA max

R

SMB

(JEDECDO-214AA)

SCHEMATICDIAGRAM

TM

NOAGEINGAND NO NOISE
IF DESTROYED, THE SMP100 FALLS INTO

SHORTCIRCUIT,STILLENSURINGPROTECTION
BOARDSPACESAVING

COMPLIESWITHTHE

FOLLOWINGSTANDARDS:

ITUK20 4000 10/700 5/310 100 ­VDE0433 4000 10/700 5/310 100 ­VDE0878
IEC-1000-4-5

FCCPart 68, lightning surge
type A

FCCPart 68, lightning surge
type B

BELLCORETR-NWT-001089
Firstlevel

BELLCORETR-NWT-001089
Secondlevel

CNETl31-24 4000 0.5/700 0.8/310 100 -

Peak Surge

Voltage

(V)

4000 1.2/50 1/20 100 -

level4
level4

1500

800
100 9/720 5/320 25 -

2500
1000

5000 2/10 2/10 500 -

Voltage

Waveform

(µs)

10/700

1.2/50

10/160
10/560

2/10

10/1000

Current

Waveform

(µs)

5/310

8/20

10/160
10/560

2/10

10/1000

Admissible

Ipp

(A)

100
100

200
100

500
100

Necessary

Resistor

(Ω)

-

-

-

-

-

-

August 1999-Ed : 8A

1/9

SMP100-xxx

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

R

th(j-I)

th(j-a)

Junctionto leads 20 °C/W
Junctionto ambienton printedcircuit

100 °C/W

(withstandardfootprint dimensions)

ABSOLUTE MAXIMUMRATINGS

(T

amb

=

25°C)

Symbol Parameter Value Unit

I

pp

I

FS

I

TSM

T

L

T

stg

Tj

Peakpulse current:
10/1000µs (open circuitvoltagewaveform1 kV 10/1000µs)
5/310µs (opencircuitvoltage waveform4 kV, 10/700µs)
8/20µs (open circuit voltagewaveform4 kV 1.2/50 µs)
2/10µs (opencircuitvoltage waveform2.5kV 2/10 µs)

100
150
250

500
Fail-safemode 8/20 µs5kA
Nonrepetitivesurge peak on-statecurrent

Onecycle
Nonrepetitivesurge peak on-statecurrent

F= 50Hz

50Hz
60Hz

0.2s
2s

55
60

25

12
Maximumlead temperaturefor solderingduring 10s 260 °C
Storagetemperaturerange

Maximumjunction temperature

- 55 to+ 150
150

A
A
A
A

A
A

A
A

°C
°C

Note1:

2/9

Pulsewaveform

10 / 1000µstr=10µs tp = 1000

µs
8/20µstr=8µstp=20µs
5 / 310µstr=5
1/20µstr=1

µ

s tp = 310µs

µ

stp=20

µ

s

2/10µstr=2µstp=10µs

100

50

0

%I

PP

t

r

t

p

t

SMP100-xxx

ELECTRICALCHARACTERISTICS(T

amb

=25°C)

Symbol Parameter

V

RM

I

RM

V

R

I

R

V

BR

V

BO

I

H

I

BO

I

PP

C

Stand-offvoltage
Leakagecurrent at stand-offvoltage
Continuousreversevoltage
Continuousreversecurrent
Breakdownvoltage
Breakovervoltage
Holdingcurrent
Breakovercurrent
Peak pulse current
Capacitance

STATICPARAMETERS

Type

@V

I

RM

RM

max.

AV

µ

I

@V

R

R

max.

note 1

AV VmAmApF

µ

V

BO

max.

note 2

@I

BO

I

H

min.

note 3

SMP100-8 2 6 50 8 20 800 50(typ) 100
SMP100LC-35 2 32 50 35 55 800 150 90
SMP100-65 2 55 50 65 80 800 150 160
SMP100-120 2 110 50 120 160 800 150 140
SMP100-140 2 120 50 140 200 800 150 140
SMP100-200 2 170 50 200 265 800 150 130
SMP100-230 2 200 50 230 300 800 150 120
SMP100-270 2 230 50 270 350 800 150 120
SMP100-140H225 2 120 50 140 200 800 225 140
SMP100-200H225 2 170 50 200 265 800 225 130
SMP100-230H225 2 200 50 230 300 800 225 130
SMP100-270H225 2 230 50 270 350 800 225 120

Note 1 : IRmeasured at VRguaranteesVBR>V
Note 2 : Measuredat 50Hz, see testcircuit1. In any caseV
Note 3 : See functional holdingcurrent test circuit 2.
Note 4 : VR=1Vbias, V

=1V,F=1MHz.

RMS

R

BOmin

≥ V

BR

C

typ.

note 4

3/9

SMP100-xxx

DYNAMICPARAMETERS

Symbol Test conditions(see note 5) Type Max. Unit

SMP100-8 25

SMP100LC-35 55

SMP100-65 95

SMP100-120 200

Testconditions1

dV/dt= 100 V/µs, di/dt< 10 A/µs,I

V

BO

= 100A

PP

Testconditions2

dV/dt= 1kV/µs, di/dt < 10A/µs, I

Note 5 : VBOparameters are given by a KeyTek ’System2’ generator with PN246I module.

Seetest circuits 3 forVBOdynamic parameters.

PP

=10A

SMP100-140 220
SMP100-200 285
SMP100-230 320

SMP100-270 370
SMP100-140H225 220
SMP100-200H225 285
SMP100-230H225 320
SMP100-270H225 370

V

TESTCIRCUIT1 FOR I

Transformer

TESTPROCEDURE:

PulseTest duration (tp = 20ms):

-For Bidirectionaldevices= Switch K is closed

-For Unidirectionaldevices = Switch K is open.
V

Selection

OUT

-Device with V

-V

- Devicewith V

-V

andVBOparameters:

BO

Auto

220V/2A

220V

Transformer

220V/800 V

5A

<

200 Volt

BO

= 250 V

OUT

OUT

BO

= 480V

RMS,R1

≥ 200 Volt

RMS,R2

static
relay.

V

out

=140Ω.

=240 Ω.

=20ms

tp

K

I

BO

measure

R1

140

R2

240

D.U.T

V

BO

measure

4/9

SMP100-xxx

TESTCIRCUIT2 for IHparameter.

R

-V

P

V

BAT

D.U.T.

= - 48 V

Surge generator

This is a GO-NOGO testwhich allows to confirmthe holdingcurrent (IH)level in a functionaltest circuit.

TESTPROCEDURE:

- Adjust the currentlevel at the I

- Firethe D.U.T. witha surgecurrent: I

- TheD.U.T. will comeback to the off-statewithin 50 ms max.

value by short circuiting the D.U.T.

H

=10A, 10/1000µs.

pp

TESTCIRCUITS3 FORVBODYNAMICPARAMETERS

100 V / µs, di/dt < 10 A / µs, Ipp = 100 A

2 Ω

U

KeyTek’System 2’ generator with PN246I module

10 µF

1kV/µs, di/dt < 10 A / µs, Ipp = 10 A

26 µH

U

KeyTek’System 2’ generator with PN246I module

60 µF

12 Ω

250 Ω

45 Ω

47 Ω

66 Ω

470 Ω

46 µH

83 Ω

0.36 nF

46 µH

5/9

SMP100-xxx

TYPICALAPPLICATIONS
1 - Primary protectionmodule

3 * SMP100

MDF

2 - Line card protection

Line

Card

-V

bat

LINE A

LINE B

PTC

PTC

3 * SMP100

3 - ISDN: U interfaceprotection

PTC

PTC

3 * SMP100

RING

RELAY

R3

R4

R5

R6

LCP1511D

1/2 DA108S1

+5V

R

Integrated

SLIC

220

nF

R

Internal

circuitry

6/9

Feeder

SMP100-xxx

Fig 1 :

versusoverloadduration(T

70
60
50
40
30
20
10

Fig 3 :

Non repetitivesurge peak on-state current

initial= 25 °C).

j

I (A)TSM

F=50Hz

0

1E-2 1E-1 1E+0 1E+1 1E+2 1E+3

t(s)

Relativevariation of holding currentversus

junctiontemperature.

IH[Tj] / IH[Tj=25°C]

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-40 -20 0 20 40 60 80 100 120

T(°C)j

Fig 2 :

On-state voltage versus on-state current

(typicalvalues).

I (A)

T

50

Tj=25°C

10

1

2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0

Fig 4 :

Variation of thermal impedancejunction to

V (V)T

ambientversuspulse duration.

Zth(j-a)(°CW)

100

10

1

1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

t (s)p

Fig 5 :

Relative variation of junction capacitance

versusreversevoltageapplied (typicalvalues).

Note : For other types than SMP100-8, the curve can be
extrapolated(dotted line)

C[VR]/C[VR=1V]

1.0

F=1MHz

0.5

0.2

0.1
1 10 100 500

V (V)R

7/9

SMP100-xxx

MARKING

Type Marking Package Weight Baseqty Delivery mode

SMP100-8 PL8 SMB 0.107g 2500 Tape& Reel

SMP100LC-35 L35 SMB 0.107g 2500 Tape& Reel

SMP100-65 P06 SMB 0.107g 2500 Tape& Reel
SMP100-120 P12 SMB 0.107g 2500 Tape& Reel
SMP100-140 P14 SMB 0.107g 2500 Tape& Reel
SMP100-200 P20 SMB 0.107g 2500 Tape& Reel
SMP100-230 P23 SMB 0.107g 2500 Tape& Reel
SMP100-270 P27 SMB 0.107g 2500 Tape& Reel

SMP100-140H125 P16 SMB 0.107g 2500 Tape& Reel
SMP100-200H225 P22 SMB 0.107g 2500 Tape& Reel
SMP100-230H225 P24 SMB 0.107g 2500 Tape& Reel
SMP100-270H225 P29 SMB 0.107g 2500 Tape& Reel

EpoxymeetsUL94, V0

ORDERCODE

SURFACE
MOUNT
PROTECTION

SMP 100

IPP=100A

270 H225

-

VOLTAGE

H225: I

=225mA

H

:I

= 150mA

H

8/9

PACKAGEMECHANICAL DATA

SMB(Plastic)

SMP100-xxx

E1

E

C

L

FOOTPRINT (in millimeters)

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

D

A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008

b 1.95 2.20 0.077 0.087
c 0.15 0.41 0.006 0.016

A1

A2

b

E 5.10 5.60 0.201 0.220

E1 4.05 4.60 0.159 0.181

D 3.30 3.95 0.130 0.156

L 0.75 1.60 0.030 0.063

2.3

1.52 2.75

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1.52

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