SGS Thomson Microelectronics SMBYW02-200 Datasheet
SMBYW02-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
MAINPRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
(max) 0.85 V
V
F
2A
200 V
Tj (max) 150°C
FEATURESAND BENEFITS
SUITEDFOR SMPS
VERYLOW CONDUCTION LOSSES
NEGLIGIBLESWITCHING LOSSES
HIGHSURGE CURRENT CAPABILITY
LOW FORWARD AND REVERSE RECOVERY
TIMES
DESCRIPTION
Single chip rectifier suited forSwitch Mode Power
Suppliesandhigh frequencyDC to DCconverters.
Packaged in SMB, this surface mount device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
SMB
(JEDECDO-214AA)
ABSOLUTE RATINGS(limitingvalues)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitivepeak reversevoltage
RMSforward current
Averageforwardcurrent
Tl=100°C
200 V
10 A
2A
δ = 0.5
I
FSM
Nonrepetitive surgepeak forwardcurrent
tp=10ms
50 A
sinusoidal
Tstg
Tj
October 1999 - Ed: 4C
Storagetemperaturerange
Maximumoperatingjunctiontemperature
- 65 to+ 150 °C
150 °C
1/5
SMBYW02-200
THERMALRESISTANCE
Symbol Parameter Value Unit
Rth (j-l)
Junctionto leads
25 °C/W
STATIC ELECTRICALCHARACTERISTICS
Symbol Parameters TestConditions Min. Typ. Max. Unit
V
F*
I
R
Pulse test : * tp = 380 µs, δ <2%
ReverseLeakageCurrent Tj = 25°CI
**
ForwardVoltageDrop T
** tp = 5 ms, δ <2%
F
=100°CI
T
j
=25°CV
j
=100°C
T
j
F
R=VRRM
=6A
=2A
0.8 0.85
0.1 0.3 mA
1.25 V
10 µA
To evaluatethe conductionlossesuse the followingequation :
P = 0.7 x I
F(AV)
+0.075 x I
F2(RMS)
RECOVERYCHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
trr T
tfr T
V
FP
=25°CI
j
=25°CI
j
Tj=25°CI
=1A dIF/dt= -50A/µsVR=30V 26 35 ns
F
=2A dIF/dt= -50A/µs
F
=1.1 x VFmax
V
FR
=2A dIF/dt= -50A/µs5V
F
30 ns
2/5
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