SGS Thomson Microelectronics SMBYW01-200 Datasheet
®
HIGH EFFICIENC Y FA ST RECO VE RY DIO D E
MAIN PRODUCT CHARACTERISTICS
SMBYW01-200
I
F(AV)
V
RRM
(max) 0.71 V
V
F
1 A
200 V
Tj (max) 150 ° C
FEATURES AND BENEFITS
VERY LOW SWITCHING LOSSES
LOW FORWARD VOLTAGE DROP BIPOLAR
DEVICE
LOW PEAK FO RWARD VOL T AGE FOR TELE-
COM TRANSIENT OPERATI ON SUCH AS IN
LIGHTING PROTECTION CIRCUITS
DESCRIPTION
Single chip rectifier suited to Switch Mode Power
Supplies and high frequency DC to DC converters.
Packaged in SMB, this surface mount device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
SMB
(JEDEC DO-214AA )
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage
RMS forward current
Average forward current
Tlead=140°C
200 V
8A
1A
δ = 0.5
I
FSM
Surge non repetitive forward current
tp=10ms
60 A
sinusoidal
T
stg
T
j
October 1999 - Ed: 4A
Storage and junction temperature range
Maximum operating junction temperature
- 65 to + 150
150 °C
°
C
1/5
SMBYW01-200
THERMAL RESISTANCE S
Symbol Parameter Value Unit
Rth (j-l)
Junction to lead
13
STATIC ELECTRICAL CHARACTER ISTICS
Symbol Parameters Test Conditions Min. Typ. Max. Unit
*
V
F
**
I
R
Pulse test : * tp = 380 µs, δ < 2 %
Forward voltage drop T
Reverse leakage current T
** tp = 5 ms, δ < 2 %
= 25°CI
j
= 150°CI
T
j
= 25°CV
j
T
= 125°C
j
= 1 A
F
= 1 A
F
= V
R
0.65 0.71
RRM
180 400
0.9 V
3
To evaluate the maximum conduction losses use the following equation :
P = 0.58 x I
+ 0.118 x I
F(AV)
F2(RMS )
RECOVERY CHARACTE RISTICS
°
C/W
µ
A
Symbol Test Conditions Min. Typ. Max. Unit
t
rr
t
fr
V
FP
Tj = 25°CIF = 0.5 A Irr = 0.25 A IR = 1A 25 ns
I
= 1 A dIF/dt = - 50 A/µs VR = 30V 25 35
F
Tj = 25°CIF = 1A dIF/dt = 100 A/µs 25 ns
Tj = 25°CIF = 1A dIF/dt = 100 A/µs 5 V
2/5
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