SGS Thomson Microelectronics SMBYT03-400 Datasheet
SMBYT03
October 1999 - Ed : 2C
FAST RECOVERY RECTIFIER DIODES
DESCRIPTION
FEATURES
SMC
Symbol Parameter Value Unit
I
F(RMS)
RMSforwardcurrent
10 A
I
F(AV)
Averageforwardcurrent
Tl=55°C
δ = 0.5
3A
I
FSM
Nonrepetitive surgepeak forward current
tp=10ms
sinusoidal
60 A
Tstg
Tj
Storageand junctiontemperaturerange
- 40 to + 150
- 40 to + 150°C°C
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
RRM
Repetitivepeak reversevoltage
400 V
Symbol Parameter Value Unit
Rth (j-l)
Junction-leads
20 °C/W
THERMALRESISTANCE
VERYLOW REVERSERECOVERYTIME
VERYLOW SWITCHINGLOSSES
LOW NOISETURN-OFF SWITCHING
SURFACEMOUNTDEVICE
Single high voltage rectifier ranging from 200V to
400 V suitedfor Switch Mode PowerSupplies and
other powerconverters.
1/5
Symbol TestConditions Min. Typ. Max. Unit
V
F*
Tj=25°CI
F
=3A
1.5 V
T
j
= 100°C
1.05 1.4
I
R
**
T
j
=25°CV
R
=V
RRM
10 µA
T
j
= 100°C
0.2 0.6 mA
Pulse test : * tp = 380 µs, duty cycle < 2 %
** tp = 5 ms, duty cycle < 2 %
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
trr T
j
=25°CI
F
= 0.5A
I
R
=1A
Irr= 0.25A
25 ns
I
F
=1A
V
R
= 30V
dI
F
/dt= -15A/µs
60
RECOVERYCHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
t
IRM
VCC= 200V IF=3A Lp≤0.05µH
T
j
=100°CdI
F
/dt = -50A/µs
35 50 ns
I
RM
1.5 2 A
To evaluatethe conductionlossesuse thefollowing equation:
P = 1.1x I
F(AV)
+ 0.08 xI
F2(RMS)
TURN-OFF SWITCHINGCHARACTERISTICS (Withoutserie inductance)
Voltage (V)
200 300 400
Marking
C2 C3 C4
Lasermarking
Logoindicatescathode
SMBYT03
2/5
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