SGS Thomson Microelectronics SMBYT01-400 Datasheet
FAST RECOVERY RECTIFIER DIODES
FEATURES
VERYLOWREVERSERECOVERYTIME
VERYLOWSWITCHINGLOSSES
LOW NOISETURN-OFF SWITCHING
SURFACEMOUNT DEVICE
DESCRIPTION
SMBYT01
Singlehighvoltagerectifiersuitedfor SwitchMode
PowerSuppliesand other power converters.
SMB
(Plastic)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
I
F(RMS)
I
F(AV)
RMSforwardcurrent
Averageforwardcurrent
Tl=110°C
10 A
1A
δ = 0.5
I
FSM
Nonrepetitivesurge peak forwardcurrent
tp=10ms
30 A
sinusoidal
T
stg
Tj
Storageand junctiontemperaturerange
- 40 to + 150
- 40 to + 150°C°C
Symbol Parameter Value Unit
V
RRM
Repetitivepeak reversevoltage
400 V
THERMALRESISTANCE
Symbol Parameter Value Unit
R
th (j-l)
October 1999 - Ed: 2A
Junction-leads
25 °C/W
1/5
SMBYT01
STATIC ELECTRICALCHARACTERISTICS
Symbol TestConditions Min. Typ. Max. Unit
V
F*
I
R
Pulse test : * tp = 380 µs, δ <2%
Tj=25°CI
= 100°C
T
j
**
=25°CV
T
j
T
= 100°C
j
** tp = 5 ms, δ <2%
=1A
F
=V
R
RRM
1.05 1.4
0.1 0.3 mA
1.5 V
10 µA
RECOVERYCHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
trr T
=25°CI
j
= 0.5A
F
=1A
I
R
I
=1A
F
= 30V
V
R
Irr= 0.25A
dI
/dt= -15A/µs
F
25 ns
60
TURN-OFF SWITCHINGCHARACTERISTICS (Without serieinductance)
Symbol Test Conditions Min. Typ. Max. Unit
t
IRM
I
RM
VCC= 200V IF=1A Lp≤0.05µH
=100°CdI
T
j
/dt = -50A/µs
F
35 50 ns
1.5 2 A
To evaluatethe conductionlossesuse thefollowing equation:
P = 1.1x I
Voltage(V)
Marking
F(AV)
+ 0.25 xI
F2(RMS)
400
B4
Lasermarking
Logoindicatescathode
2/5
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