SGS Thomson Microelectronics SM6T75A, SM6T75CA Datasheet
SM6T6V8A/220A
®
FEATURES
PEAK PULSE POWER : 600 W (10/1000µs)
■
BREAKDOWN VOLTAGE RANGE :
■
From 6.8V to 220 V.
UNI AND BIDIRECTIONAL TYPES
■
LOW CLAMPING FACTOR
■
FAST RESPONSE TIME
■
UL RECOGNIZED
■
DESCRIPTION
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particularly suited to protect voltage sensitive devices
such as MOS Technology and low voltage supplied IC’s.
SM6T6V8CA/220CA
TRANSIL
SMB
(JEDEC D0-214AA)
TM
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25°C)
Symbol Parameter Value Unit
P
PP
P
I
FSM
T
stg
T
j
T
L
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.
Peak pulse power dissipation (see note 1) Tj initial = T
Power dissipation on infinite heatsink T
Non repetitive surge peak forward
current for unidirectional types
50°C
amb =
tp = 10ms
Tj initial = T
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10 s.
amb
amb
600 W
5W
100 A
-65to+175
150
260 °C
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th (j-l)
th (j-a)
Junction to leads
Junction to ambient on printed circuit on recommended pad
20 °C/W
100 °C/W
layout
°C
°C
August 2001- Ed: 5A
1/5
SM6Txx
ELECTRICAL CHARACTERISTICS (T
Symbol Parameter
amb
= 25°C)
I
I
F
V
RM
V
BR
V
CL
I
RM
I
PP
αT
V
F
Uni
directional
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
RM
Peak pulse current
Voltage temperature coefficient
Forward voltage drop
I
Types
Mar-
kingBidirectional
RM@VRM
max min nom max max max max typ
Mar-
µAV VVVmAV A V A10
king
VV
CLVBR
V
RM
VBR@IRVCL@I
PP
note2 10/1000µs 8/20µs note3 note4
V
I
RM
I
PP
VCL@I
F
αTC
PP
-4
V
/°C pF
SM6T6V8A DE SM6T6V8CA LE 1000 5.8 6.45 6.8 7.14 10 10.5 57 13.4 298 5.7 4000
SM6T7V5A DG SM6T7V5CA LG 500 6.4 7.13 7.5 7.88 10 11.3 53 14.5 276 6.1 3700
SM6T10A DP SM6T10CA LP 10 8.55 9.5 10 10.5 1 14.5 41 18.6 215 7.3 2800
SM6T12A DT SM6T12CA LT 5 10.2 11.4 12 12.6 1 16.7 36 21.7 184 7.8 2300
SM6T15A DX SM6T15CA LX 1 12.8 14.3 15 15.8 1 21.2 28 27.2 147 8.4 1900
SM6T18A EE SM6T18CA ME 1 15.3 17.1 18 18.9 1 25.2 24 32.5 123 8.8 1600
SM6T22A EK SM6T22CA MK 1 18.8 20.9 22 23.1 1 30.6 20 39.3 102 9.2 1350
SM6T24A EM SM6T24CA MM 1 20.5 22.8 24 25.2 1 33.2 18 42.8 93 9.4 1250
SM6T27A EP SM6T27CA MP 1 23.1 25.7 27 28.4 1 37.5 16 48.3 83 9.6 1150
SM6T30A ER SM6T30CA MR 1 25.6 28.5 30 31.5 1 41.5 14.5 53.5 75 9.7 1075
SM6T33A ET SM6T33CA MT 1 28.2 31.4 33 34.7 1 45.7 13.1 59.0 68 9.8 1000
SM6T36A EV SM6T36CA MV 1 30.8 34.2 36 37.8 1 49.9 12 64.3 62 9.9 950
SM6T39A EX SM6T39CA MX 1 33.3 37.1 39 41.0 1 53.9 11.1 69.7 57 10.0 900
SM6T68A FQ SM6T68CA NQ 1 58.1 64.6 68 71.4 1 92 6.5 121 33 10.4 625
SM6T75A FS SM6T75CA NS 1 64.1 71.3 - 78.8 1 103 5.8 134 30 10.5 575
SM6T100A FY SM6T100CA NY 1 85.5 95.0 100 105 1 137 4.4 178 22.5 10.6 500
SM6T150A GL SM6T150CA OL 1 128 143 150 158 1 207 2.9 265 15 10.8 400
SM6T200A GU SM6T200CA OU 1 171 190 200 210 1 274 2.2 353 11.3 10.8 350
SM6T220A GW SM6T220CA OW 1 188 209 220 231 1 328 2 388 10.3 10.8 330
%I
PP
100
50
0
Note 2 : Pulse test : tp<50ms.
Note 3 : ∆VBR= αT*(T
Note 4 : VR= 0 V, F = 1 MHz. For bidirectional types,
capacitance value is divided by 2.
10 s
PULSE WAVEFORM 10/1000 s
1000 s
- 25)*VBR(25°C).
amb
2/5
Fig. 1: Peak pulse power dissipation versus initial
junction temperature (printed circuit board).
t
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