Datasheet SM6HT24A, SM6HT27A, SM6HT30A, SM6HT36A, SM6HT39A Datasheet (SGS Thomson Microelectronics)

®

HIGH TEMPERATURE TRANSIL

FOR AUTOMOTIVE APPLICATIONS

FEATURES

HIGH PERFORMANCE TRANSIL DESIGNED
TO FIT HIGH TEMPERATURE ENVIRONMENT
LIKE AUTOMOTIVE APPLICATIONS...

HIGH RELIABILITY P LANA R T ECH NOLO GY
HIGH PERFORMANCE IN VOLTAGE REGU-

LATION MODE
VERY LOW LEAKAGE CU RRENT

max = 5 µA @ Tamb = 150° C)

(I

R

PEAK PULSE POW ER : 600 W (10/1000µs)
FAST RESPONSE TIME
UNIDIRECTIONAL TYPE
LOW CLAMPING FACTOR

DESCRIPTION

This high performance Transil series has been de­signed to fit high temperature environment such as
automotive applications, using surface mount
technology. These devices are using high reliability
planar technology resulting in high performances
in voltage regulation mode and low leakage cur­rent at high temperature.

SM6HTxxA

TM

SMB

(JEDEC D0-214AA)

ABSOL UTE M AXIMU M RA TIN GS (T

amb

= 25°C)

Symbol Parameter Value Unit

P

PP

Peak pulse power dissipation (see note 1) Tj initial = T

P Power dissipation on infinite heatsink T

I

FSM

Non repetitive surge peak forward
current for unidirectional types

T

stg, TJ

T

L

Note 1

: For a surge greater than the maximum valu es, the diode wil l fail in short-ci rcuit.

Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s.

tp = 10ms
Tj initial = T

amb

50°C5W

amb =

amb

600 W

75 A

- 65 to 175 °C
260 °C

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

R

th (j-l)

th (j-a)

Junction to leads
Junction to ambient on printed circuit.

20 °C/W

100 °C/W

On recommended pad layout

April 1999 Ed: 4A

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SM6HTxxA

ELECTRICAL CHARACTERISTICS

(T

= 25°C unless otherwise specified)

amb

Symbol Parameter

V

RM

V

BR

V

CL

I

RM

I

PP

V

F

Types Marking IRM @ V

SM6HT24A
SM6HT27A
SM6HT30A
SM6HT36A
SM6HT39A
SM6HT43A

Note 2 :

Pulse test : tp < 50 ms

Note 3 :

∆VBR = αT x (Tamb - 25) x VBR (25°C)

Stand-off voltage

Breakdown voltage

Clamping voltage

Leakage current @ V

Peak pulse current

Forward voltage drop

< 3.5V @ IF = 50A

V

F

(pulse test: tp ≤ 500µs)

Tamb=25°C Tamb=150°C note2 10/1000µsmax

max max min nom max max note 3

A

µ

EMB 2 5 20.5 22.8 24 25.2 1 33.2 18.0 9.4

EPB 2 5 23.1 25.7 27 28.4 1 37.5 16.0 9.6

ERB 2 5 25.6 28.5 30 31.5 1 41.5 14.5 9.7

EVB 2 5 30.8 34.2 36 37.8 1 49.9 12.0 9.9
EXB 2 5 33.3 37.1 39 41.0 1 53.9 11.1 10.0
EYB 2 5 36.8 40.9 43 45.2 1 59.3 10.1 10.1

I

I

F

VV

CLVBR

V

RM

RM

RM

A VVVVmAVA10

µ

VBR @ I

R

I

I

RM

PP

V

F

VCL @ I

PP

V

T

α

-4

/°C

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SM6HTxxA

Fig. 1-1: Peak power dissipation versus initial junc-

tion temperature.

Ppp[Tj initial] / Pp p [T j initial=25°C]

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0
0 25 50 75 100 125 150 175 200

Tj initial(°C)

Fig. 2: Peak pulse power versus exponential pulse
duration (Tj initial=25°C).

Ppp(kW)

10.0

1.0

0.1

0.01 0.10 1.00 10.00

tp(ms)

Fig. 1-2: Continous power dissipation versus am­bient temperature.

P(W)

6

Rth(j-a)=Rth(j-l)

5
4
3
2

Rth(j-a)=100°C/W

1
0

0 25 50 75 100 125 150 175

Tamb(°C)

Fig. 3: Clamping voltage versus peak pulse cur­rent (Tj initial=25°C).

Ipp(A)

1E+2

SM6HT27A

SM6HT24A

1E+1

1E+0

tp=1ms

1E-1

10 100

Vcl(V)

SM6HT30A

SM6HT36A

SM6HT39A

tp=20µs

SM6HT43A

Fig. 4: Junction capacitance versus reverse ap­plied voltage (typical values).

C(pF)

1000

500

SM6HT24A

SM6HT27A

200

100

1 10 100 200

VR(V)

SM6HT30A

SM6HT36A

SM6HT43A

F=1MHz

SM6HT39A

Fig. 5: Peak forward voltage drop versus peak for­ward current (typical values).

IFM(A)

100.0

Tj=175°C

10.0

Tj=25°C

1.0

0.1

0.5 1.0 1.5 2.0 2.5 3.0 3.5

VFM(V)

3/5

SM6HTxxA

Fig. 6: Variation of thermal impedance junction to

ambient versus pulse duration (Printed circuit
board FR4 with recommended pad layout).

Zth(j-a)(°C/W)

1E+2

1E+1

1E+0

1E-1

1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

tp(s)

Fig .8: Variation of leakage current versus junction
temperature (typical values).

IR(µA)

1E+4
1E+3
1E+2
1E+1
1E+0

1E-1
1E-2
1E-3
1E-4

25 50 75 100 125 150 175

Tj(°C)

Fig. 7: Thermal resistance junction to ambient ver­sus copper surface under each lead (printed circuit
board FR4, e(Cu)=35µm).

Rth(j-a) (°C/W)

100

90
80
70
60
50
40

012345

S(cm²)

4/5

MARKING : Logo, Date Code, Type Code, Cathode Band.
PACKAGE ME CHANICAL D AT A

SMB (Plastic)

E1

D

SM6HTxxA

DIMENSIONS

REF.

A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008

Millimeters Inches

Min. Max. Min. Max.

E

A1

C

L

A2

Weight = 0.107 g

FOOTPRINT DIMENSIONS (Millimeter)

SMB Plast ic.

2.3

Packaging

1.52 2.75

: standard packaging is tape and reel.

1.52

b 1.95 2.20 0.077 0.087
c 0.15 0.41 0.006 0.016

E 5.10 5.60 0.201 0.220

E1 4.05 4.60 0.159 0.181

b

D 3.30 3.95 0.130 0.156

L 0.75 1.60 0.030 0.063

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change without notice. This publication supersedes and replaces all information previously supplied.
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