SGS Thomson Microelectronics SM5908 Datasheet
1N5908
SM5908
TRANSIL
FEATURES
UNIDIRECTIONALTRANSILDIODE
PEAKPULSEPOWER: 1500 W (10/1000µs)
REVERSESTANDOFFVOLTAGE: 5V
LOW CLAMPINGFACTOR
FASTRESPONSETIME
UL RECOGNIZED
DESCRIPTION
The1N5908and SM5908are dedicatedtothe5 V
logiccircuitprotecti on(TT LandCMOStechnologi es ).
Their low clamping voltage at high current level
guarantees excellent protection for sensitive
components.
ABSOLUTEMAXIMUMRATINGS (T
amb
=25°C).
Symbol Parameter Value Unit
CB429 SMC
TM
P
PP
P Powerdissipationon infiniteheatsink T
I
FSM
T
stg
Tj
T
L
Note 1 : For a surge greater than themaximum values, the diodewill failin short-circuit.
Peakpulse powerdissipation(see note1) Tj initial = T
=75°C5W
amb
Nonrepetitivesurgepeakforwardcurrent
for unidirectionaltypes
tp=10ms
T
initial= T
j
Storagetemperaturerange
Maximumjunction temperature
Maximumlead temperaturefor soldering
during10s (at 5mm from case for CB429)
CB429
SMC
amb
amb
1500 W
200 A
- 65 to +175
175
230
260
THERMALRESISTANCES
Symbol Parameter Value Unit
R
R
th (j-l)
th (j-a)
Junctionto leads 20 °C/W
Junctionto ambient
on printedcircuit.
L lead= 10 mm
Onrecommendedpadlayout
CB429 75 °C/W
SMC 75 °C/W
°C
°C
°C
°C
August 1999 Ed : 2A
1/6
1N5908/SM5908
ELECTRICALCHARACTERISTICS(T
Symbol Parameter
V
RM
V
BR
V
CL
I
RM
I
PP
α
T Voltagetemperaturecoefficient
V
F
Types
Stand-offvoltage
Breakdownvoltage
Clampingvoltage
Leakagecurrent @ VRM
Peakpulse current
Forwardvoltage
I
RM
@V
VBR@IRVCL@I
RM
max min max max max max typ
note2 10/1000µs 10/1000µs 10/1000µs note3 note4
µAVVmAVAVAVA10
1N5908
300 5 6 1 7.6 30 8 60 8.5 120 5.7 9500
SM5908
amb
=25°C)
V
BR
V
CL
VCL@IPPVCL@I
PP
I
I
F
V
V
RM
F
V
I
RM
I
PP
PP
αTC
-4
/°CpF
%I
PP
100
10
sµ
50
0
s
µ
1000
Note 2 : Pulse test: tp < 50ms
Note 3 : ∆V
Note 4 :V
2/6
=αT*(T
BR
= 0V,F = 1 MHz
R
-25)* VBR(25°C).
amb
Fig. 1: Peakpulse powerdissipationversus
initial junction temperature (printedcircuitboard).
t
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