SGS Thomson Microelectronics SGSD100, SGSD200 Datasheet

POWER DARLINGTON TRANSISTORS

■ SGS-THOMSONPREFERREDSALESTYPES

■ COMPLEMENTARY PNP - NPN DEVICES

■ MONOLITHICDARLINGTON

CONFIGURATION

APPLICATIONS:

■ GENERALPURPOSE SWITCHING

APPLICATION

■ GENERALPURPOSE AMPLIFIERS

DESCRIPTION

The SGSD100 is silicon epitaxial-base NPN
power transistor in monolithic Darlington
configuration mounted in TO-218 plastic
package.

It is inteded for use in general purpose and high
currentamplifier applications.

The complementaryPNP type is the SGSD200.

SGSD100
SGSD200

COMPLEMENTARY SILICON

3

2

1

TO-218

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

NPN SGSD100
PNP SGSD200

V
V

I

I
P
T

ForPNPtypesvoltageand currentvalues arenegative.

September1997

Collector-Base Voltage (IE=0) 80 V

CBO

Colle c t o r -Emitte r Vo lt a g e (IB=0) 80 V

CEO

Collector Current 25 A

I

C

Collector Peak Current 40 A

CM

Base Current 6 A

I

B

Base Peak Current 10 A

BM

Tota l Dissipat io n at Tc≤ 25oC 130 W

tot

Storage Temperature -65 to 150

stg

Max. Operating JunctionTemperature 150

T

j

o

C

o

C

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SGSD100/SGSD200

THERMAL DATA

R

thj-case

Thermal Resistance Ju nction-case Max 0.96

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CBO

I

CEV

I

CEO

I

EBO

V

CEO(sus)

Collector Cut-off
Curren t (I

E

=0)

Collector Cut-off
Curren t (V

= -0.3V)

BE

Collector Cut-off
Curren t (I

B

=0)

Emitter Cut-offCurrent
(I

=0)

C

∗ Collector-Emitter

=80V

V

CE

V

=80V Tc= 100oC

CE

=80V

V

CE

V

=80V Tc= 100oC

CE

=60V

V

CE

V

=60V Tc= 100oC

CE

=5V 2 mA

V

EB

0.5

1.5

0.1
2

0.5

1.5

IC=50mA 80 V

Sustaini ng Voltage

V

∗ Collector-Emitter

CE(sat)

Saturation Voltage

V

∗ Base-Emit ter

BE(sat)

Saturation Voltage

V

∗ Base-Emit ter Volta ge IC=10A VCE=3V

BE

h

∗ DC Current Gain IC=5A VCE=3V

FE

V

∗ Diode Forward Voltage IF=5A

F

E

Second Breakdown

s/b

Energy

I

s/b

Second Breakdown

IC=5A IB=20mA
I

=5A IB=20mA Tc= 100oC

C

I

=10A IB=40mA

C

I

=10A IB=40mA Tc=100oC

C

I

=20A IB=80mA

C

I

=20A IB=80mA Tc=100oC

C

IC=20A IB=80mA
I

=20A IB=80mA Tc=100oC

C

I

=10A VCE=3V Tc= 100oC

C

I

=5A VCE=3V Tc=100oC

C

I

=10A VCE=3V

C

I

=10A VCE=3V Tc= 100oC

C

I

=20A VCE=3V

C

I

=20A VCE=3V Tc= 100oC

C

I

=5A Tc=100oC

F

I

=10A

F

I

=10A Tc= 100oC

F

I

=20A

F

I

=20A Tc= 100oC

F

VCC=30V L=3mH
V

=30V L=3mH Tc=100oC

CC

VCE= 25 V t = 500 ms 6 A

0.95

0.8

1.2

1.3
2

2.3

2.6

2.5

11.8

1.6

600

5000
8000

500

4000
8000

300

2000
2000

1.2

0.85

1.6

1.4

2.3

1.3

250
250

1.2

1.75

3.5

3.3 V

3V

15000
12000

6000

Current

∗ Pulsed:Pulseduration= 300µs,duty cycle 1.5 %
ForPNP type voltageand currentvalues are negative.

mA
mA

mA
mA

mA
mA

V
V
V
V
V
V

V

V

V
V
V
V
V
V

mJ
mJ

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