SGS Thomson Microelectronics SD8250 Datasheet
RF & MICROWAVE TRANSISTORS
.REFRACTORY/GOLD METALLIZATION
.EM I T T ER SITE BALLASTED
. 5 :1 VSWR CAPABILITY @ 1.75 dB RF
OVERDRI VE
. L OW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.O VERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT
250 W MIN. WITH 8.0 dB GAIN
=
SD8250
AVIONI CS APPLICA TIONS
.400 x .400 2L FL (S036)
hermetically sealed
ORDER CODE
SD8250
BRAND I NG
STAN250A
DESC RIPTION
The SD8250 is a high power Class C transistor
specifically designed for TACAN/DME pulsed output and driver applications.
This device is designed for operation under moderate pulse width and duty cycle pulse conditions
and is capable of withstanding 5:1 output VSWR
at rated RF overdrive.
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The SD8250 is supplied in the AMPAC Hermetic
Metal/Ceramic package with internal Input/Output
matching structures.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 90°C) 575 W
Device Current* 20 A
Collector-Supply Voltage* 55 V
Junction Temperature (PulsedRF Operation) 250
Storage Temperature − 65 to +200
case
= 25°C)
PIN CO N NECTI ON
1. Collector 3. Emitter
2. Base 4. Base
°
C
°
C
THERMA L DATA
R
TH(j-c)
*Appliesonly torated RFamplifieroperation
(1) Infra-RedScanofHot SpotJunction Temperature atRated RF Operating Conditions
July 19, 1994
Junction-Case Thermal Resistance
(1)
0.28 °C/W
1/5
SD8250
ELEC TRI C AL SPECIFIC A TIO N S (T
case
= 25°C)
STATIC
Symbol Test Condi tion s
BV
CBOIC
BV
EBOIE
BV
CESIC
I
CES
h
FE
= 35mA IE= 0mA 65 — — V
= 15mA IC= 0mA 4.0 — — V
= 25mA IB= 0mA 60 — — V
VBE= 0V VCE= 50V — — 20 mA
VCE= 5V IC= 1A 10 — — —
Min. Typ. Max.
Value
DYNAMIC
Symb ol Test Cond itions
P
OUT
η
P
Note: Pulse W idth = 20µSec
f = 960 — 1215 MHz PIN= 40 W VCC= 50 V 250 295 — W
cf=960 — 1215 MHz PIN= 40 W VCC= 50 V 38 44 — %
f = 960 — 1215 MHz PIN= 40 W VCC= 50 V 8.0 8.7 — dB
G
Duty Cycle = 5%
T
C
= 25°C
Value
Min. Typ. Max.
Unit
Uni t
TYPICAL PERFO RM AN CE
TYPICAL BROADBAND
TYPICAL BROADBAND POWER
POWER AMPLIFIER
AMPLIFIER
400
P
OUT
P
O
W
E
R
O
U
T
P
U
T
W
A
T
T
S
P
40W
350
300
250
200
150
100
50
IN =
P
32W
IN =
P
25W
IN =
P
40W
IN =
P
IN =
P
25W
IN =
960 1090
FREQUENCY (MHz)
FREQUENCY (MHz)
32W
I
N
P
5.1
U
100
90
80
70
60
η
C
50
40
30
1215
T
I
V
N
S
P
W
C
U
R
.
O
L
L
E
C
T
O
R
E
F
F
.
%
3.1
T
V
S
W
R
.
1.1
INPUT VSWR vs FREQUENCY
960 1090
FREQUENCY (MHz)FREQUENCY (MHz)
1215
2/5
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