RF & MICROWAVE TRANSISTORS
.REFRACTORY/GOLD METALLIZATION
.EM I T T ER SITE BALLASTED
. 5 :1 VSWR CAPABILITY @ 1.75 dB RF
OVERDRI VE
. L OW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.O VERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT
250 W MIN. WITH 8.0 dB GAIN
=
SD8250
AVIONI CS APPLICA TIONS
.400 x .400 2L FL (S036)
hermetically sealed
ORDER CODE
SD8250
BRAND I NG
STAN250A
DESC RIPTION
The SD8250 is a high power Class C transistor
specifically designed for TACAN/DME pulsed output and driver applications.
This device is designed for operation under moderate pulse width and duty cycle pulse conditions
and is capable of withstanding 5:1 output VSWR
at rated RF overdrive.
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The SD8250 is supplied in the AMPAC Hermetic
Metal/Ceramic package with internal Input/Output
matching structures.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 90°C) 575 W
Device Current* 20 A
Collector-Supply Voltage* 55 V
Junction Temperature (PulsedRF Operation) 250
Storage Temperature − 65 to +200
case
= 25°C)
PIN CO N NECTI ON
1. Collector 3. Emitter
2. Base 4. Base
°
C
°
C
THERMA L DATA
R
TH(j-c)
*Appliesonly torated RFamplifieroperation
(1) Infra-RedScanofHot SpotJunction Temperature atRated RF Operating Conditions
July 19, 1994
Junction-Case Thermal Resistance
(1)
0.28 °C/W
1/5
SD8250
ELEC TRI C AL SPECIFIC A TIO N S (T
case
= 25°C)
STATIC
Symbol Test Condi tion s
BV
CBOIC
BV
EBOIE
BV
CESIC
I
CES
h
FE
= 35mA IE= 0mA 65 — — V
= 15mA IC= 0mA 4.0 — — V
= 25mA IB= 0mA 60 — — V
VBE= 0V VCE= 50V — — 20 mA
VCE= 5V IC= 1A 10 — — —
Min. Typ. Max.
Value
DYNAMIC
Symb ol Test Cond itions
P
OUT
η
P
Note: Pulse W idth = 20µSec
f = 960 — 1215 MHz PIN= 40 W VCC= 50 V 250 295 — W
cf=960 — 1215 MHz PIN= 40 W VCC= 50 V 38 44 — %
f = 960 — 1215 MHz PIN= 40 W VCC= 50 V 8.0 8.7 — dB
G
Duty Cycle = 5%
T
C
= 25°C
Value
Min. Typ. Max.
Unit
Uni t
TYPICAL PERFO RM AN CE
TYPICAL BROADBAND
TYPICAL BROADBAND POWER
POWER AMPLIFIER
AMPLIFIER
400
P
OUT
P
O
W
E
R
O
U
T
P
U
T
W
A
T
T
S
P
40W
350
300
250
200
150
100
50
IN =
P
32W
IN =
P
25W
IN =
P
40W
IN =
P
IN =
P
25W
IN =
960 1090
FREQUENCY (MHz)
FREQUENCY (MHz)
32W
I
N
P
5.1
U
100
90
80
70
60
η
C
50
40
30
1215
T
I
V
N
S
P
W
C
U
R
.
O
L
L
E
C
T
O
R
E
F
F
.
%
3.1
T
V
S
W
R
.
1.1
INPUT VSWR vs FREQUENCY
960 1090
FREQUENCY (MHz)FREQUENCY (MHz)
1215
2/5
TYPICAL PERFORM AN CE (cont’d )
TYPICAL RELATIVE OUTPUT & COLLEC-
TYPICAL POWER OUTPUT & COLLECTOR
TOR EFFICIENCY vs COLLECTOR VOLTAGE
EFFICIENCY vs COLLECTOR VOLTAGE
SD8250
IMPEDA NCE D ATA
100
90
P
O
80
W
E
R
70
O
60
U
T
50
P
U
40
T
30
W
A
20
T
T
S
10
0
30 35 40 45 50
COLLECTOR VOLTAGE (VOLTS)
COLLECTOR VOLTAGE (VOLTS)
P
OUT
η
C
80
C
70
O
L
L
E
C
60
T
O
R
50
E
F
F
.
40
%
30
TYPICAL INPUT
IMPEDANCE
Z
IN
TYPICAL COLLECTOR LOAD
IMPEDANCE
Z
CL
FREQ. ZIN(Ω)ZCL(Ω)
L = 960 MHz 1.0 + j 3.5 1.9 − j 1.8
M=1090 MHz 4.0 + j 3.5 1.6 − j 0.9
H=1215 MHz 2.2 + j 2.2 1.4 − j 1.1
Z
IN
L
M
H
M
H
Z
CL
L
PIN= 40 W
VCC= 50 V
Normalized to 50 ohms
3/5
SD8250
TEST CIRCUIT
All dimensions are in inches.
Substrate material: .025 thick AI2O
3
C1 : 100 µF Electrolytic Capacitor, 63V
C2 : .1 µF Ceramic Capacitor
C3 : Feedthru Bypass SCI 712-022
C4 : Johanson 7475 Gigatrim .6 — 4.5 pF
C5 : Johanson 7475 Gigatrim .6 — 4.5 pF
C6 : D.C. Block 100 pF
L1 : #26 Wire, 4 Turn .062 I.D.
L2 : #26 Wire, 4 Turn .062 I.D.
4/5
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0222 rev. A
SD8250
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
5/5
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