SGS Thomson Microelectronics SD57120 Datasheet
SD57120
RF POWER TRANSISTORS
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
ν EXCELLENTTHERMALSTABILITY
ν COMMONSOURCECONFIGURATION,
PUSH-PULL
ν P
ν BeOFREE PACKAGE
ν INTERNAL INPUTMATCHING
=120 W with 13 dB gain @ 960 MHz
OUT
DESCRIPTION
The SD57120 is a common source N-Channel
enhancement-modelateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57120 is designed for high gain
and broadband performance operating in
common source mode at 28V. Its internal
matching makes it ideal for base station
applicationsrequiringhigh linearity.
The
LdmoST
PRELIMINARY DATA
FAMILY
M252
epoxy sealed
ORDERCODE BRANDING
SD57120 XSD57120
PIN CONNECTION
1. Drain 4. Gate
2. Drain 5. Gate
3. Source
ABSOLUTE MAXIMUM RATINGS (T
Symb o l Parameter Val u e Uni t
V
(BR)DSS
V
P
DISS
T
Drain Sou r ce Volt age 65 V
Gat e- Source Voltage ± 20 V
GS
Drain Current 14 A
I
D
Power Dissipation (@ T c= 70oC) 236 W
Max. Oper ating Junction Tempe r at ure 200
T
j
Storage T emperature -65 to 150
STG
case
=25oC)
THERMAL DATA
R
th(j-c)
March 2000
Junct ion- Ca se Therm al Re sistanc e 0.55
o
o
o
C/W
C
C
1/7
SD57120
ELECTRICAL SPECIFICATION (T
case
=25oC)
STATIC (Per Section)
Symb o l Para met er Mi n . Typ . Max. Uni t
V
(BR)DSSVGS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)VGS
G
FS
C
*VGS=0V VDS= 28 V f = 1 M Hz 175 pF
ISS
C
OSS
C
RSS
* Includes Internal Input Moscap.
=0V IDS=10mA 65 V
VGS=0V VDS=28V 1 µA
VGS= 20V VDS=0V 1 µA
VDS= 28V ID=100mA 3.0 5.0 V
= 10V ID=3A 0.7 0.8 V
VDS= 10V ID=3A 3 mho
VGS=0V VDS=28V f=1MHz 44 pF
VGS=0V VDS=28V f=1MHz 1.7 pF
DYNAMIC
Symb o l Para met er Mi n . Typ . Max. Uni t
P
OUT
G
η
Load
Mismatch
VDD= 28V f = 960 MHz IDQ= 80 0 m A 120 W
VDD=28V P
PS
VDD=28V P
D
f = 960 M H z V
=120W IDQ= 800 mA 13 14 dB
out
= 120W IDQ= 800 mA 50 %
out
=28V P
DD
= 120 W IDQ=800mA
out
10:1 VSWR
ALL PHASE ANGLES
IMPEDANCEDATA
Measured gateto gateand drain todrain respectively.
2/7
FREQ. ZIN(Ω)Z
DL
(Ω)
945 MHz 3.9 + j 4.9 3.6 - j 5.1
960 MHz 4.1 - j 4.6 3.2 4 - j 4. 74
980 MHz 3.9 + j 5.2 3.27 - j 6. 9
SD57120
TYPICALPERFORMANCE
OutputPower vs. Input Power PowerGain and Efficiencyvs. OutputPower
3/7
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