SGS Thomson Microelectronics SD57060-01 Datasheet
SD57060-01
RF POWER TRANSISTORS
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
■ EXCELLENTTHERMALSTABILITY
■ COMMONSOURCECONFIGURATION
■ P
■ BeOFREE PACKAGE
= 60 W with11.5 dB gain @ 945 MHz
OUT
DESCRIPTION
The SD57060-01is a common sourceN-Channel
enhancement-modelateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57060-01 is designed for high
gain and broadband performance operating in
common source mode at 28V. It is ideal for base
station applicationsrequiringhigh linearity.
The
LdmoST
PRELIMINARY DATA
FAMILY
M250
epoxy sealed
ORDER CODE BRANDING
SD57060-01 TSD57060-01
PIN CONNECTION
1. Drain 3.Source
2. Gate
ABSOLUTE MAXIMUM RATINGS (T
Symb o l Para meter Val u e Uni t
V
(BR)DSS
V
P
DISS
T
THERMAL DATA (T
R
th(j-c)
R
th(c-s)*
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning340 or equivalent).
January 2000
Drain Source Voltage 65 V
Gat e- Source Voltage ± 20 V
GS
Drain C urr ent 7 A
I
D
Power Dissipation (@ Tc = 70oC) 118 W
Max. Operatin g Junctio n Te mperatu r e 200
T
j
Sto rage Tempe rature -65 to 150
STG
=70oC)
case
Junct ion-Cas e Ther mal Re s ist a nc e
Case-Heatsin k T her mal Re si stance
case
=25oC)
1.1
0.5
o
o
o
C/W
o
C/W
C
C
1/8
SD57060-01
ELECTRICAL SPECIFICATION (T
case
=25oC)
STATIC
Symbol Para met e r Mi n . Typ . Ma x. Unit
V
(BR)DSSVGS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)VGS
G
FS
C
ISS
C
OSS
C
RSS
=0V IDS=1mA 65 V
VGS=0V VDS=28V 1 µA
VGS=20V VDS=0V 1 µA
VDS=28V ID= 1 00 mA 2.0 5.0 V
=10V ID=3A 0.7 0.8 V
VDS=10V ID=3A 2.5 mho
VGS=0V VDS=28V f=1MHz 88 pF
VGS=0V VDS=28V f=1MHz 44 pF
VGS=0V VDS=28V f=1MHz 2.8 pF
REF. 7145649B
DYNAMIC
Symbol Para met e r Mi n . Typ . Ma x. Unit
P
OUT
G
η
Load
Mismatch
f = 945 MHz VDD=28V IDQ= 100 mA 60 W
f = 945 MHz VDD=28V P
P
f = 945 MHz VDD=28V P
D
f = 945 MHz V
DD
=28V P
=60W IDQ= 1 00 mA 11.5 1 5 dB
out
=60W IDQ= 1 00 mA 53 60 %
out
=60W IDQ=100mA
out
5:1 VSWR
ALL PHASEANGLES
IMPEDANCEDATA
2/8
FREQ. ZIN(Ω)Z
DL
(Ω)
925 MHz 0 . 8 - j 0.09 5 1.5 + j 0. 48
945 MHz 0.7 - j 0.6 5 1.6 + j 0. 25
960 MHz 0. 7 - j 0.1 1. 7 + j 0.130
TYPICALPERFORMANCE
SD57060-01
OutputPower and PowerGain vs Input Power
Efficiency vs Output Power
OutputPower and PowerGain vsInput Power
Efficiencyvs OutputPower
OutputPower vs Drain-SourceVoltage
IntermodulationDistorsion vs OutputPower
3/8
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