The SD57060-01is a common sourceN-Channel
enhancement-modelateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57060-01 is designed for high
gain and broadband performance operating in
common source mode at 28V. It is ideal for base
station applicationsrequiringhigh linearity.
The
LdmoST
PRELIMINARY DATA
FAMILY
M250
epoxy sealed
ORDER CODEBRANDING
SD57060-01TSD57060-01
PIN CONNECTION
1. Drain3.Source
2. Gate
ABSOLUTE MAXIMUM RATINGS (T
Symb o lPara meterVal u eUni t
V
(BR)DSS
V
P
DISS
T
THERMAL DATA (T
R
th(j-c)
R
th(c-s)*
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning340 or equivalent).
January 2000
Drain Source Voltage65V
Gat e- Source Voltage± 20V
GS
Drain C urr ent7A
I
D
Power Dissipation (@ Tc = 70oC)118W
Max. Operatin g Junctio n Te mperatu r e200
T
j
Sto rage Tempe rature-65 to 150
STG
=70oC)
case
Junct ion-Cas e Ther mal Re s ist a nc e
Case-Heatsin k T her mal Re si stance
M250 (.230 x .360 WIDE 2/L N/HERM PILL) MECHANICALDATA
DIM.
MIN.TYP.MAX.MIN.TYP.MAX.
A5.215.710.2050.225
B2.162.920.0850.115
C5.596.090.2200.240
D8.899.400.3500.370
E9.409.910.3700.390
F0.110.150.0040.006
G0.891.140.0350.045
H1.451.700.0570.067
I2.673.940.1050.155
mminch
Controlling Dimension: Inches
1022729B
7/8
SD57060-01
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patentrights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. Thispublication supersedes and replaces allinformation previously supplied. STMicroelectronics products
are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.