SGS Thomson Microelectronics SD57045-01 Datasheet
SD57045-01
RF POWER TRANSISTORS
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
ν EXCELLENTTHERMALSTABILITY
ν COMMONSOURCECONFIGURATION
ν P
ν BeOFREE PACKAGE
=45 W PEP with13 dB gain@ 945 MHz
OUT
DESCRIPTION
The SD57045-01 is a common source N-Channel
Enhancement-Mode Lateral Field-Effect RF
power transistor designed for broadband
commercial and industrial applications at
frequencies up to 1.0 GHz. The SD57045-01 is
designed for high gain and broadband
performance operating in common source mode
at 28V. It is ideal for base stations applications
requiringhigh linearity.
The
LdmoST
FAMILY
ADVANCE DATA
M250
(Epoxysealed)
ORDERCODE BRANDING
SD57045-01 TSD57045-01
PIN CONNECTION
1.Drain 3.Source
2. Gate
ABSOLUTE MAXIMUM RATINGS (T
Symb o l Parameter Val u e Uni t
V
(BR)DSS
V
V
P
T
THERMAL DATA (T
R
R
th(c-s)
* Determined using a flataluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
March 2000
Drain Sou r ce Volt age 65 V
DGR Drain-G ate Vol t age (R
Gat e- Source Voltage ± 20 V
GS
Drain Curr ent 5 A
I
D
Power Dissipation (@ T c= 70oC) 93 W
DISS
Max. Oper ating Juncti on T emperature 200
T
j
Storage T emperature -65 to 200
STG
=70oC)
case
th(j-c)
Junct ion- Ca se Therm al Resistance
Case-Heat s i nk Therm al R esis tanc e
=1MΩ)
GS
case
=25oC)
65 V
1.4
0.50
o
o
o
C/W
o
C/W
C
C
1/11
SD57045-01
ELECTRICAL SPECIFICATION (T
case
=25oC)
STATIC
Symb o l Para met er Mi n . T yp. Max. Uni t
V
(BR)DSSVGS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)VGS
G
FS
C
ISS
C
OSS
C
RSS
=0V IDS=1mA 65 V
VGS=0V VDS=28V 1 µA
VGS= 20V VDS=0V 1 µA
VDS= 28V ID=250mA 2.5 5.0 V
= 10V ID=3A 0.7 0.9 V
VDS= 10V ID=5A 2 2.7 mho
VGS=0V VDS=28V f=1MHz 80 pF
VGS=0V VDS=28V f=1MHz 40 pF
VGS=0V VDS=28V f=1MHz 3.2 pF
REF. 7143895B
DYNAMIC
Symb o l Para met er Mi n . T yp. Max. Uni t
P
OUT
IMD
G
η
Load
Mismatch
Note: f1= 945.0 MHz
f
f = 945 M H z VDD=28V IDQ= 250 m A 45 W
VDD=28V P
3
VDD=28V P
PS
VDD=28V P
D
f = 945 M H z V
=45WPEP IDQ= 250 mA -32 -28 dBc
out
=45WPEP IDQ= 250 mA 13 15 dB
out
= 45 W PEP IDQ= 250 m A 33 40 %
out
=28V P
DD
=45W IDQ=250mA
out
10:1 VSWR
ALL PHASE ANGL ES
=945.1 MHz
2
IMPEDANCEDATA
2/11
FREQ. ZIN(Ω)Z
DL
(Ω)
925 MHz 1.27 + j 0.82 2.22 - j 1. 63
930 MHz 1.21 + j 0.79 2.24 - j 1. 61
945 MHz 1.04 + j 0.71 2.30 - j 1. 52
960 MHz 0.93 + j 0.43 2.37 - j 1. 37
965 MHz 0.91 + j 0.41 2.43 - j 1. 36
TYPICALPERFORMANCE
SD57045-01
Capacitancevs Drain-Source Voltage
Drain Current vs Gate Voltage
Gate-SourceVoltage vs Case Temperature
DC MaximumSafe Operating Area
MaximumThermal Resistancevs Case
Temperature
3/11
SD57045-01
TYPICALPERFORMANCE(CW)
OutputPower and Power Gain vs Input Power
PowerGain vs Output Power
Efficiencyvs Output Power BroadbandPower Performance
OutputPower vs. Drain Voltage OutputPower vs. Gate Bias Voltage
4/11
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