SGS Thomson Microelectronics SD57045 Datasheet



SD57045

RF POWER TRANSISTORS

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs

ν EXCELLENTTHERMALSTABILITY
ν COMMONSOURCECONFIGURATION
ν P
ν BeOFREE PACKAGE

=45 W PEP with13 dB gain@ 945 MHz

OUT

DESCRIPTION

The SD57045 is a common source N-Channel
Enhancement-Modelateral Field-EffectRF power
transistor designed for broadband commercial
and industrial applications at frequencies up to

1.0 GHz. The SD57045 is designed for high gain
and broadband performance operating in
common source mode at 28V. It is ideal for base
stationsapplications requiring high linearity.

The

LdmoST

FAMILY

ADVANCE DATA

M243

(EpoxySealed)

ORDERCODE BRANDING

SD57045 TSD57045

PIN CONNECTION

1.Drain 3.Source

2. Gate

ABSOLUTE MAXIMUM RATINGS (T

Symb o l Parameter Val u e Uni t

V

(BR)DSS

V

V

P

T

THERMAL DATA (T

R

R

th(c-s)

* Determined using a flataluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).

March 2000

Drain Sou r ce Volt age 65 V

DGR Drain-G ate Vol t age (R

Gat e- Source Voltage ± 20 V

GS

Drain Curr ent 5 A

I

D

Power Dissipation (@ T c = 70oC) 93 W

DISS

Max. Oper ating Juncti on T empe r at ure 200

T

j

Storage T emperature -65 to 200

STG

=70oC)

case

th(j-c)

Junct ion- Ca se Therm al Re sistance
Case-Heat s i nk Therm al Resistanc e

=1MΩ)

GS

case

=25oC)

65 V

1.4

0.45

o
o

o

C/W

o

C/W

C
C

1/11

SD57045

ELECTRICAL SPECIFICATION (T

case

=25oC)

STATIC

Symb o l Para met er Mi n . T yp. Max. Uni t

V

(BR)DSSVGS

I

DSS

I

GSS

V

GS(Q)

V

DS(ON)VGS

G

FS

C

ISS

C

OSS

C

RSS

=0V IDS=1mA 65 V
VGS=0V VDS=28V 1 µA
VGS= 20V VDS=0V 1 µA
VDS= 28V ID=250mA 2.5 5.0 V

= 10V ID=3A 0.7 0.9 V
VDS= 10V ID=5A 2.0 2.7 mho
VGS=0V VDS=28V f=1MHz 80 pF
VGS=0V VDS=28V f=1MHz 40 pF
VGS=0V VDS=28V f=1MHz 3.2 pF

REF. 7133620B

DYNAMIC

Symb o l Para met er Mi n . T yp. Max. Uni t

P

OUT

IMD

G

η

Load

Mismatch

Note: f1= 945.0 MHz

f

f = 945 M H z VDD=28V IDQ= 250 m A 45 W
VDD=28V P

3

VDD=28V P

PS

VDD=28V P

D

f = 945 M H z V

=45WPEP IDQ= 250 mA -32 -28 dBc

out

=45WPEP IDQ= 250 mA 13 15 dB

out

= 45 W PEP IDQ= 250 mA 33 4 0 %

out

=28V P

DD

=45W IDQ=250mA

out

10:1 VSWR

ALL PHASE ANGLES

=945.1 MHz

2

IMPEDANCEDATA

2/11

FREQ. ZIN(Ω)Z

DL

(Ω)
925 MHz 1.27 + j 0. 82 2.22 - j 1. 63
930 MHz 1.21 + j 0. 79 2.24 - j 1. 61
945 MHz 1.04 + j 0. 71 2.30 - j 1. 52
960 MHz 0.93 + j 0. 43 2.37 - j 1. 37
965 MHz 0.91 + j 0. 41 2.43 - j 1. 36

TYPICALPERFORMANCE

SD57045

Capacitancevs Drain-Source Voltage

Drain Current vs Gate Voltage

Gate-SourceVoltage vs Case Temperature

DC MaximumSafe Operating Area

MaximumThermal Resistancevs Case
Temperature

3/11

SD57045

TYPICALPERFORMANCE(CW)

OutputPower and Power Gain vs Input Power

PowerGain vs Output Power

Efficiencyvs Output Power Broadband PowerPerformance

OutputPower vs. Drain Voltage OutputPower vs. Gate Bias Voltage

4/11