SGS Thomson Microelectronics SD57030-01 Datasheet
SD57030-01
RF POWER TRANSISTORS
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
■ EXCELLENTTHERMALSTABILITY
■ COMMONSOURCECONFIGURATION
■ P
■ BeOFREE PACKAGE
= 30 W with13 dB gain@ 945 MHz
OUT
DESCRIPTION
The SD57030-01is a commonsource N-Channel
enhancement-modelateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57030-01 is designed for high
gain and broadband performance operating in
common source mode at 28V. It is ideal for base
stations applicationsrequiringhigh linearity.
The
LdmoST
PRELIMINARY DATA
FAMILY
M250
epoxy sealed
ORDER CODE BRANDING
SD57030-01 XSD57030-01
PIN CONNECTION
1.Drain 3.Source
2. Gate
ABSOLUTE MAXIMUM RATINGS (T
Symb o l Para meter Val u e Uni t
V
(BR)DSS
V
P
DISS
T
Drain Source Voltage 65 V
Gat e- Source Voltage ± 20 V
GS
Drain C urr ent 4 A
I
D
Power Dissipation (@ Tc= 70oC) 74 W
Max. Operatin g Junctio n Te mperatu r e 200
T
j
Sto rage Tempe rature -65 to 150
STG
case
=25oC)
THERMAL DATA
R
th(j-c)
January 2000
Junct ion-Cas e Ther mal Re s ist a nc e 1.75
o
o
o
C/W
C
C
1/7
SD57030-01
ELECTRICAL SPECIFICATION (T
case
=25oC)
STATIC
Symbol Para met e r Mi n . Typ . Ma x. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)VGS
g
FS
C
ISS
C
OSS
C
RSS
VGS=0V IDS=10mA
VGS=0V VDS=28V 1 µA
VGS=20V VDS=0V 1 µA
VDS=28V ID=50mA 2.0 5.0 V
=10V ID=3A 1.3 V
VDS=10V ID=3A 1.8 mho
VGS=0V VDS=28V f=1MHz 58 pF
VGS=0V VDS=28V f=1MHz 34 pF
VGS=0V VDS=28V f=1MHz 2.4 pF
65 V
DYNAMIC
Symbol Para met e r Mi n . Typ . Ma x. Unit
P
OUT
G
η
Load
Mismatch
VDD= 28V f = 945 MHz IDQ=50mA 30 W
VDD=28V P
PS
VDD=28V P
D
f = 945 M Hz V
=30W IDQ=50mA 13 14 dB
out
=30W IDQ=50mA 50 60 %
out
=28V P
DD
=30W IDQ=50mA
out
10:1 VSWR
ALL P HASE AN GLE S
2/7
TYPICALPERFORMANCE (CW)
SD57030-01
OutputPower vs InputPower
OutputPower vs Supply Voltage
PowerGain and Efficiency vs OutputPower
Output Power vs GateSource Voltage
3/7
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