SGS Thomson Microelectronics SD56150 Datasheet

SD56150

RF POWER TRANSISTORS

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION, PUSH-

PULL

• P

= 150 W WITH 13 dB gain @ 860 MHz /32V

OUT

• BeO FREE PACKAGE

• INTERNAL INPUT MATCHING

DESCRIPTION

The SD56150 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0 GHz.
The SD56150 is designed for high gain and
broadband performance operating in common
source mode at 32 V. Its internal matching makes it
ideal for TV broadcast applications requiring high
linearity.

The

ORDER CODE

SD56150

LdmoST

PRELIMINARY DATA

M252

epoxy sealed

PIN CONNECTION

1

5

2

4

FAMILY

BRANDING

SD56150

3

1. Drain

2. Drain

3. Source

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Unit

V

(BR)DSS

V

GS

I

D

P

DISS

Tj Max. Operating Junction Temperature 200 °C

T

STG

Drain-Source Voltage 65 V
Gate-Source Voltage ± 20 V
Drain Current 17 A

Power Dissipation (@ Tc = 70 °C)

Storage Temperature -65 to +150 °C

CASE

= 25 °C)

4. Gate

5. Gate

236 W

THERMA L D ATA

R

th(j-c)

November, 27 2002

Junction -Case Thermal Resistance 0.55 °C/W

1/8

SD56150

ELECTRICAL SPECIFICATION (T

CASE

= 25 °C)

STATIC (Per Section)

Symbol Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(Q)

V

DS(ON)

G

FS

C

ISS

C

OSS

C

RSS

* Includes Internal Input Moscap.

VGS = 0 V IDS = 10 mA
VGS = 0 V VDS = 28 V
VGS = 20 V VDS = 0 V
VDS = 28 V

= 100 mA

ID

VGS = 10 V ID = 3 A
VDS = 10 V ID = 3 A

*VGS = 0 V VDS = 28 V f = 1 MHz

VGS = 0 V VDS = 28 V f = 1 MHz
VGS = 0 V VDS = 28 V f = 1 MHz

65 V

1 µA
1 µA

2.0 5.0 V

0.5 0.8 V

2.5 4 mho
255 pF

50 pF

2.9 pF

DYNAMIC

Symbol Test Conditions Min. Typ. Max. Unit

P

OUT

G

PS

η

D

Load

mismatch

VDD = 32 V IDQ = 500 mA f = 860 MHz
VDD = 32 V IDQ = 500 mA P
VDD = 32 V IDQ = 500 mA P

= 32 V IDQ = 500 mA P

V

DD

= 150 W f = 860 MHz

OUT

= 150 W f = 860 MHz

OUT

= 150 W f = 860 MHz

OUT

ALL PHASE ANGLES

150 W

13 16.5 dB
50 60 %

10:1 VSWR

IMPEDANCE DATA

Typical Input
Impedance

D

Z

DL

G

Zin

S

FREQ.

860 MHz 4.7 - j 5.5 3.6 + j 6.5
880 MHz 4.3 - j 6.9 3.9 + j 7.4
900 MHz 4.5 - j 8.8 4.4 + j 7.8

Measured drain to drain and gate to gate respectively.

ZIN (Ω)Z

Typical Drain
Load Impedance

(Ω)

DL

2/8

TYPICAL PERFORMANCE

Capacitance vs. Drain Voltage

1000

SD56150

Gate Source Voltage vs. Case Temperature

1.04

100

C (pF)

10

f = 1 MH z

1

0 5 10 15 20 25 3 0 35 4 0

Vdd ( V)

Drain Current vs. Gate-Source Voltage

4.5

4

3.5

3

2.5

Id (A)

2

Ciss

Coss

Crss

1.02

1.00

0.98

Vgs (Normalised)

0.96

0.94

Vds = 10 V

0.92

-25 0 25 50 75 100

Tc (°C)

Id = 1 A

Id = 6 A
Id = 5 A
Id = 4 A

Id = 3 A

Id = 2 A

Id = 0 .5 A

1.5

1

0.5
Vds = 10 V

0

0123456

Vgs (V)

3/8