Datasheet SD56150 Datasheet (SGS Thomson Microelectronics)

SD56150

RF POWER TRANSISTORS

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION, PUSH-

PULL

• P

= 150 W WITH 13 dB gain @ 860 MHz /32V

OUT

• BeO FREE PACKAGE

• INTERNAL INPUT MATCHING

DESCRIPTION

The SD56150 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0 GHz.
The SD56150 is designed for high gain and
broadband performance operating in common
source mode at 32 V. Its internal matching makes it
ideal for TV broadcast applications requiring high
linearity.

The

ORDER CODE

SD56150

LdmoST

PRELIMINARY DATA

M252

epoxy sealed

PIN CONNECTION

1

5

2

4

FAMILY

BRANDING

SD56150

3

1. Drain

2. Drain

3. Source

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Unit

V

(BR)DSS

V

GS

I

D

P

DISS

Tj Max. Operating Junction Temperature 200 °C

T

STG

Drain-Source Voltage 65 V
Gate-Source Voltage ± 20 V
Drain Current 17 A

Power Dissipation (@ Tc = 70 °C)

Storage Temperature -65 to +150 °C

CASE

= 25 °C)

4. Gate

5. Gate

236 W

THERMA L D ATA

R

th(j-c)

November, 27 2002

Junction -Case Thermal Resistance 0.55 °C/W

1/8

SD56150

ELECTRICAL SPECIFICATION (T

CASE

= 25 °C)

STATIC (Per Section)

Symbol Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(Q)

V

DS(ON)

G

FS

C

ISS

C

OSS

C

RSS

* Includes Internal Input Moscap.

VGS = 0 V IDS = 10 mA
VGS = 0 V VDS = 28 V
VGS = 20 V VDS = 0 V
VDS = 28 V

= 100 mA

ID

VGS = 10 V ID = 3 A
VDS = 10 V ID = 3 A

*VGS = 0 V VDS = 28 V f = 1 MHz

VGS = 0 V VDS = 28 V f = 1 MHz
VGS = 0 V VDS = 28 V f = 1 MHz

65 V

1 µA
1 µA

2.0 5.0 V

0.5 0.8 V

2.5 4 mho
255 pF

50 pF

2.9 pF

DYNAMIC

Symbol Test Conditions Min. Typ. Max. Unit

P

OUT

G

PS

η

D

Load

mismatch

VDD = 32 V IDQ = 500 mA f = 860 MHz
VDD = 32 V IDQ = 500 mA P
VDD = 32 V IDQ = 500 mA P

= 32 V IDQ = 500 mA P

V

DD

= 150 W f = 860 MHz

OUT

= 150 W f = 860 MHz

OUT

= 150 W f = 860 MHz

OUT

ALL PHASE ANGLES

150 W

13 16.5 dB
50 60 %

10:1 VSWR

IMPEDANCE DATA

Typical Input
Impedance

D

Z

DL

G

Zin

S

FREQ.

860 MHz 4.7 - j 5.5 3.6 + j 6.5
880 MHz 4.3 - j 6.9 3.9 + j 7.4
900 MHz 4.5 - j 8.8 4.4 + j 7.8

Measured drain to drain and gate to gate respectively.

ZIN (Ω)Z

Typical Drain
Load Impedance

(Ω)

DL

2/8

TYPICAL PERFORMANCE

Capacitance vs. Drain Voltage

1000

SD56150

Gate Source Voltage vs. Case Temperature

1.04

100

C (pF)

10

f = 1 MH z

1

0 5 10 15 20 25 3 0 35 4 0

Vdd ( V)

Drain Current vs. Gate-Source Voltage

4.5

4

3.5

3

2.5

Id (A)

2

Ciss

Coss

Crss

1.02

1.00

0.98

Vgs (Normalised)

0.96

0.94

Vds = 10 V

0.92

-25 0 25 50 75 100

Tc (°C)

Id = 1 A

Id = 6 A
Id = 5 A
Id = 4 A

Id = 3 A

Id = 2 A

Id = 0 .5 A

1.5

1

0.5
Vds = 10 V

0

0123456

Vgs (V)

3/8

SD56150

TYPICAL PERFORMANCE

Output Power vs. Input Power

Power Gain vs. Output Power

180

160

140

120

100

Pout (W)

80

60

40

20

0

012345

Pin (W)

Idq = 2x250mA

Vdd = 32 V
f = 860 MHz

Efficiency vs. Output Power

80

70

60

50

(%)

40

d

η

30

20

10

0

0 50 100 150 200

Idq = 2x250mA

Pout (W)

Vdd = 32 V
f = 860 MHz

20

19

Idq = 2x600mA

18

17

Idq = 2x400mA

16

15

Gp (dB)

14

13

12

Vdd = 32 V

11

f = 860 MHz

10

0 50 100 150 200

Idq = 2x200mA

Idq = 2x250mA

Pout (W)

Output Power vs. Supply Voltage

200

180

160

140

120

100

Pout (W)

80

60

40

f = 860 MHz

20

Idq = 2 x 250 mA

0

0 10203040

Vdd (V)

Pin = 5 W

Pin = 3.2 W

Pin = 1.6 W

Efficiency vs. Supply Voltage

70

60

50

40

(%)

d

η

30

20

10

f = 860 MHz
Idq = 2 x 250 mA

0

010203040

Vdd (V)

Pin = 5 W

Pin = 3.2 W

Pin = 1.6 W

4/8

Intermodulation Distorsion vs. Output Power

0

-10

-20

-30

IMD3 (dB)

-40

-50

-60

Idq = 2x250mA

Idq = 2x600mA

Idq = 2x400mA

0 50 100 150 200

Idq = 2x200mA

Pout (W)

f1 = 859.9 MHz
f2 = 860.0 MHz
Vdd = 32 V

TEST CIRCUIT SCHEMATIC

SD56150

NOTES:

1. GAP BETWEEN GROUND & TRANSMISSION LINE = 0.056 [1.42] +0.0 02 [0.05] -0.000 [0.00 ] TYP.

2. C3 AND C4 ADJACENT TO EACH OTHER

REF. 7248365A

TEST CIRCUIT COMPONENT PART LIST

DESCRIPTION

C1,C2, C10, C11 51 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C3 9.1 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C4, C8 0.6 - 4.5 pF GIGATRIM VARIABLE CAPACITOR
C5 10 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C6 4.7 pF ATC 100A SURFACE MOUNT CERAMIC CHIP CAPACITOR
C7 13 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C9 6.2 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C12, C15, C18, C22 91 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C13, C16, C20, C24 10 µF 50V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR
C14, C17, C21, C25 0.1 µF 500V SURFACE MOUNT CERAMIC CHIP CAPACITOR
C19, C23 100 µF 63V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR
R1, R2, R3, R4 200 OHM 1/4 W SURFACE MOUNT CHIP RESISTOR
R5, R6 1.8 OHM 1/4 W SURFACE MOUNT CHIP RESISTOR
L1, L2 CHIP INDUCTOR 10 nH SURFACE MOUNT COIL
FB1, FB2 SURFACE MOUNT EMI SHIELD BEAD
B2, B1 BALUN, 25 OHM, SEMI-RIDGE OD 0.141 2.365 LG COAXIAL CABLE OR EQUIVALENT

PCB

WOVEN GLASS REINFORCED / CERAMIC FILLED 0.030” THK
BOTH SIDES

εr = 3.48, 2 Oz ED CU

5/8

SD56150

TEST FIXTURE

TEST CIRCUIT PHOTOMASTER

4 inches

6.4 inches

6/8

M252 (.400 x .860 4L BAL N/HERM W/FLG) MECHANICAL DATA

SD56150

DIM.

A 8.13 8.64 .320 .340
B 10.80 .425
C 3.00 3.30 .118 .130
D 9.65 9.91 .380 .390
E 2.16 2.92 .085 .115
F 21.97 22.23 .865 .875

G 27.94 1.100

H 33.91 34.16 1.335 1.345

I 0.10 0.15 .004 .006

J 1.52 1.78 .060 .070
K 2.36 2.74 .093 .108
L 4.57 5.33 .180 .210

M 9.96 10.34 .392 .407

N 21.64 22.05 .852 .868

MIN. TYP. MAX MIN. TYP. MAX

mm Inch

Controlling dimension: Inches

1022783C

7/8

SD56150

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