SGS Thomson Microelectronics SD5000 Datasheet
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE L INEAR APPLICATIONS
.GOLD METALLIZATION
.EMITTER SITE BALLASTING
.INTERNAL INPUT MATCHING
.O VERLAY GEOMETRY
.METAL/CERAMIC PACKAGE
.COMMON EMITTER CONFIGURATION
.P
OUT
1.5 W MIN. WITH 9.5 dB GAIN
=
.280 4L S T UD (M122)
ORDER CODE
SD5000
PIN CONNECTION
SD5000
PRELIMINARY DATA
epoxy sealed
BRANDING
S10A015
DESC RIPTION
The SD5000 is a NPN Silicon Transistor designed
for high gain linear performance at 1000 MHz.
This part uses gold metallized die and polysilicon
site ballasting to achieve high reliability and ruggedness.
The SD5000 can be used for applications such
as Telecommunications, Radar, ECM, Space and
other commercial and military systems.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
V
V
P
T
CBO
CES
EBO
I
C
DISS
T
J
STG
Collector-Base Voltage 50 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 3.5 V
Device Current 1.0 A
Power Dissipation 7.0 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
THERMA L DATA
R
TH(j-c)
November 1992
Junction-Case Thermal Resistance 25 °C/W
1/4
SD5000
ELECTRICAL SPECIFICATIO NS (T
case
= 25°C)
STATIC
Symbol Test Condi tion s
BV
CBOIC
BV
EBOIE
BV
CESIC
BV
CEOIC
I
CBO
h
FE
= 10mA 50 — — V
= 5mA 3.5 — — V
= 10mA 50 — — V
= 5mA 23 — — V
VCB= 28V — 0.2 — mA
VCE= 5V IC= 100mA 18 — 200 —
DYNAMIC
Symb ol Test Co n dit i o ns
P
1dB f = 1 GHz VCC= 20 V I
OUT
G
f = 1 GHz VCC= 20 V I
P
VSWR f = 1 GHz VCC= 20 V I
C
OB
:
f = 1 MHz VCB= 20 V — — 4.0 pF
Value
Min. Typ. Max.
Value
Min. Typ. Max.
220 mA 1.5 — — W
=
C
220 mA 9.5 — — dB
=
C
220 mA — — 25:1 —
C =
Unit
Unit
2/4
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