SGS Thomson Microelectronics SD4701 Datasheet

CELLULAR BASE STATIO N APPLICAT IONS

RF & MICROWAVE TRANSISTORS

.400 x .425 6LF L (M169)

epoxy sealed

.DESIGNED F OR CLASS AB LINEAR

OPERATION

.COMMON EMITTER

.INTERNAL INPUT/OUTPUT MATCHING

.26 VOLT, 960 MHz PERFORMANCE:

P

OUT

= 45W MIN.
GAIN = 8.5 dB MIN.
COLLECTOR EFFICIENCY50% MIN.

.INHERENT RUGGEDNESS:

LOADMISMATCHTOLERANCE OF

5:1 MIN. VSWR

3 dB OVERDRIVE CAPABILITY

DESC RIPT ION

PIN CON NECTION

BRANDING

SD4701

ORDER CODE

SD4701

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C)

Symbol Parameter Value Uni t

V

CBO

Collector-Base Voltage 60 V

V

CEO

Collector-Emitter Voltage 30 V

V

CER

Collector-Emitter Voltage 40 V

V

EBO

Emitter-Base Voltage 3.5 V

I

C

Device Current 10 A

P

DISS

Power Dissipation 145 W

T

J

Junction Temperature +200

°

C

T

STG

Storage Temperature

−

65 to +150

°

C

R

TH(j-c)

Junction-Case Thermal Resistance 1.2 °C/W

SD4701

1. Collector 3. Emitter

2. Base

THERMA L DA TA

May 1993

1/6

ELECTRICAL SPECIFICATIONS (T

case

= 25°C)

Symbol Test Conditions

Value

Unit

Min. Typ. Max.

C

OB

f = 1 MHz VCB= 26 V
For Information Only - This Device is Collector Matched

—55— pF

PINf = 960 MHz VCE= 26 V ICQ= 200 mA P

OUT

= 45 W — 5 6.3 W

P

OUT

f = 960 MHz VCE= 26 V ICQ= 200 mA PIN= 6.3 W 45 55 — W

G

P

f = 960 MHz VCE= 26 V ICQ= 200 mA P

OUT

= 45 W 8.5 9.5 — dB

η

cf=960 MHz VCE= 26 V ICQ= 200 mA P

OUT

= 45 W 50 55 — %

Load

Mismatch

f = 960 MHz VCE= 26 V ICQ= 200 mA P

OUT

= 45 W

VSWR = 5:1 MIN. @ All Phase Angles

No Degradation in

Device Performance

OVD f = 960 MHz VCE= 26 V ICQ= 200 mA

Set P

OUT

= 45 W; Increase PIN3dB

No Degradation in

Device Performance

*IMD

3

VCE= 26 V P

OUT

= 46.5 dBm (45.0W) PEP

ICQ= 200 mA

— −32 — dBT**

*N ote: f

1

= 900.00MHz @ 40.5dBm * * dBT, in dB, refer enced to tone level

f

2

= 900.01MHz @ 40.5dBm

STATIC

Symbol Test Conditions

Value

Unit

Min. Typ. Max.

BV

CBOIC

= 60 mA IE= 0mA 60 — — V

BV

CEOIC

= 60 mA IB= 0mA 30 — — V

BV

CERIC

= 60 mA RBE= 75 Ω 40 — — V

BV

EBOIE

= 10 mA IC= 0mA 3.5 — — V

I

CER

VCE= 26 V RBE= 75 Ω ——15mA

hFEVCE= 10 V IC= 1 A 15 — 100 —

DYNAMIC

SD4701

2/6