CELLULAR BASE STATIO N APPLICAT IONS
RF & MICROWAVE TRANSISTORS
.400 x .425 6LF L (M169)
epoxy sealed
.DESIGNED F OR CLASS AB LINEAR
OPERATION
.COMMON EMITTER
.INTERNAL INPUT/OUTPUT MATCHING
.26 VOLT, 960 MHz PERFORMANCE:
P
OUT
= 45W MIN.
GAIN = 8.5 dB MIN.
COLLECTOR EFFICIENCY50% MIN.
.INHERENT RUGGEDNESS:
LOADMISMATCHTOLERANCE OF
5:1 MIN. VSWR
3 dB OVERDRIVE CAPABILITY
DESC RIPT ION
PIN CON NECTION
BRANDING
SD4701
ORDER CODE
SD4701
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C)
Symbol Parameter Value Uni t
V
CBO
Collector-Base Voltage 60 V
V
CEO
Collector-Emitter Voltage 30 V
V
CER
Collector-Emitter Voltage 40 V
V
EBO
Emitter-Base Voltage 3.5 V
I
C
Device Current 10 A
P
DISS
Power Dissipation 145 W
T
J
Junction Temperature +200
°
C
T
STG
Storage Temperature
−
65 to +150
°
C
R
TH(j-c)
Junction-Case Thermal Resistance 1.2 °C/W
SD4701
1. Collector 3. Emitter
2. Base
THERMA L DA TA
May 1993
1/6
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
Symbol Test Conditions
Value
Unit
Min. Typ. Max.
C
OB
f = 1 MHz VCB= 26 V
For Information Only - This Device is Collector Matched
—55— pF
PINf = 960 MHz VCE= 26 V ICQ= 200 mA P
OUT
= 45 W — 5 6.3 W
P
OUT
f = 960 MHz VCE= 26 V ICQ= 200 mA PIN= 6.3 W 45 55 — W
G
P
f = 960 MHz VCE= 26 V ICQ= 200 mA P
OUT
= 45 W 8.5 9.5 — dB
η
cf=960 MHz VCE= 26 V ICQ= 200 mA P
OUT
= 45 W 50 55 — %
Load
Mismatch
f = 960 MHz VCE= 26 V ICQ= 200 mA P
OUT
= 45 W
VSWR = 5:1 MIN. @ All Phase Angles
No Degradation in
Device Performance
OVD f = 960 MHz VCE= 26 V ICQ= 200 mA
Set P
OUT
= 45 W; Increase PIN3dB
No Degradation in
Device Performance
*IMD
3
VCE= 26 V P
OUT
= 46.5 dBm (45.0W) PEP
ICQ= 200 mA
— −32 — dBT**
*N ote: f
1
= 900.00MHz @ 40.5dBm * * dBT, in dB, refer enced to tone level
f
2
= 900.01MHz @ 40.5dBm
STATIC
Symbol Test Conditions
Value
Unit
Min. Typ. Max.
BV
CBOIC
= 60 mA IE= 0mA 60 — — V
BV
CEOIC
= 60 mA IB= 0mA 30 — — V
BV
CERIC
= 60 mA RBE= 75 Ω 40 — — V
BV
EBOIE
= 10 mA IC= 0mA 3.5 — — V
I
CER
VCE= 26 V RBE= 75 Ω ——15mA
hFEVCE= 10 V IC= 1 A 15 — 100 —
DYNAMIC
SD4701
2/6
TYPICA L PERFO R MANCE
OUTPUT POWER (WATTS)
POWER OUTPUT vs POWER INPUT
VCE= 26V
ICQ= 200mA
960MHz
910MHz
860MHz
OUTPUT POWER (WATTS)
POWER OUTPUT vs SUPPLY VOLTAGE
PIN= 7W
PIN= 10W
FREQ = 960MHz
ICQ= 200mA
PIN= 6.3W
OUTPUT POWER (WATTS)
POWER OUTPUT vs FREQUENCY
VCE= 26V
ICQ= 200mA
PIN= 10W
PIN= 6.3W
PIN= 7W
POWER GAIN (dB)
RL (-dB) COLLECTOR EFFICIENCY(%)
BROADBAND PERFORMANCE
R
L
P
G
η
C
P
OUT
= 45W
VCE= 26V
ICQ= 200mA
SD4701
3/6
TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
860 MHz
960 MHz
Z
CL
Z
IN
860 MHz
960 MHz
Normalized to 10 ohms
IMPEDA NCE DATA
Z
IN
Z
CL
FREQ. ZIN(Ω)Z
CL
(Ω)
860 MHz 5.20 + j 6.70 5.20 − j 4.45
870 MHz 5.15 + j 6.20 5.15 − j 4.50
880 MHz 5.05 + j 5.70 5.10 − j 4.55
890 MHz 5.00 + j 5.15 4.90 − j 4.80
900 MHz 4.95 + j 4.80 4.80 − j 5.10
915 MHz 4.95 + j 4.50 4.50 − j 5.20
930 MHz 4.95 + j 4.40 4.00 − j 4.90
945 MHz 4.90 + j 4.25 3.85 − j 4.65
960 MHz 4.80 + j 4.10 3.70 − j 4.35
VCE= 26V
P
OUT
= 45W
ICQ= 200mA
RL< 10dB
SD4701
4/6
C1, C2 : 1.3 pF ATC 100B Chip Capacitor
C3, C7 : 430 pF ATC 100B Chip Capacitor
C4, C5 : 0.6 - 4.5 pF Johanson Variable Capacitor
C6 : 0.7 pF ATC 100B Chip Capacitor
C8 : 470 pF ATC 100B Chip Capacitor
C9, C12 : 221 pF ATC 100B Chip Capacitor
C10, C11 : 47µF, 50V, Electrolytic Capacitor
L1 : 5 Turns #22 AWG 0.16” I.D. 1T:1 Air Choke
R1 + Fb : 11 Ω1⁄8W Resistor + FB VK-200
R3 : 11 Ω1⁄8W Resistor
R4 : 100 Ω1⁄8W Resistor
P1 : 1kΩ, 1 Turn Potentiometer
Board Material: 1 oz = 2 sides, Thickness 31.25 mils, Er = 2.55
TEST CIRCUIT
TEST CIRC U IT PHOTOMAS T ER
SD4701
5/6
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0169
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronicsassumes no responsability forthe
consequences of useof such information nor foranyinfringement of patents or other rightsof third parties which may results from its use. No
license isgranted byimplication or otherwiseunder any patentor patentrights of SGS-THOMSONMicroelectronics. Specificationsmentioned
in this publication aresubject to changewithout notice. This publication supersedes andreplaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuse ascritical componentsinlife supportdevices orsystems withoutexpress
written approvalof SGS-THOMSONMicroelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
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SD4701
6/6
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