SGS Thomson Microelectronics SD4600 Datasheet
CELLULAR BASE STATIO N APPLICAT IONS
.GOLD METALLIZATION
.860-960 MHz
.26 VOLTS
.EFFICIENCY 50% MIN.
.P
OUT
60 W MIN. WITH 7.5 dB GAIN
=
SD4600
RF & MICROWAVE TRANSISTORS
PRELIMINARY DATA
.438 x .450 2LFL (M173)
epoxy sealed
ORDER CODE
SD4600
PIN CONNECTION
BRAN DI NG
SD4600
DESC RIPTION
The SD4600 isdesigned for 960MHz mobile base
stations in both analog and digital applications.
Including double input and output matching networks, the SD4600 features high impedances
allowing operation over the full 860 to 960 MHz
bandwidth.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DATA
R
TH(j-c)
Collector-Base Voltage 60 V
Collector-Emitter Voltage 28 V
Emitter-Base Voltage 3.5 V
Device Current 8 A
Power Dissipation 146 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 1.2 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base
65 to +150
−
°
C
°
C
*Appliesonly to rated RF amplifieroperation
November 1992
1/4
SD4600
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC (Total Device)
Symbol Test Conditions
BV
BV
BV
I
CBO
EBO
CEO
CEO
h
FE
IC= 100mA 60 — — V
IE= 20mA 3.5 — — V
IC= 100mA 28 — — V
VCE= 25V — — 30 mA
VCE= 5V IC= 3A 25 — 80 —
Min. Typ. Max.
Value
DYNAMIC (Total Device)
Symbol Test Conditi ons
P
OUT
η
cf=960MHz VCC= 26V ICQ= .200A 50 58 — %
G
P
f = 960MHz VCC= 26V ICQ= .200A 60 65 — W
f = 960MHz VCC= 26V ICQ= .200A 7.5 8.0 — dB
Value
Min. Typ. Max.
VSWR f = 960MHz VCC= 26V 5:1 — — —
Unit
Unit
TYPICA L PERFO R MA NCE
POWER OUTPUT & COLLECTOR
EFFICIENCY vs POWER INPUT
P
OUT
η
C
FREQ=960MHz
V
26V
=
CC
I
200mA
=
CQ
2/4
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