
CELLULAR BASE STATIO N APPLICAT IONS
.GOLD METALLIZATION
.860-960 MHz
.26 VOLTS
.EFFICIENCY 50% MIN.
.P
OUT
60 W MIN. WITH 7.5 dB GAIN
=
SD4600
RF & MICROWAVE TRANSISTORS
PRELIMINARY DATA
.438 x .450 2LFL (M173)
epoxy sealed
ORDER CODE
SD4600
PIN CONNECTION
BRAN DI NG
SD4600
DESC RIPTION
The SD4600 isdesigned for 960MHz mobile base
stations in both analog and digital applications.
Including double input and output matching networks, the SD4600 features high impedances
allowing operation over the full 860 to 960 MHz
bandwidth.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DATA
R
TH(j-c)
Collector-Base Voltage 60 V
Collector-Emitter Voltage 28 V
Emitter-Base Voltage 3.5 V
Device Current 8 A
Power Dissipation 146 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 1.2 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base
65 to +150
−
°
C
°
C
*Appliesonly to rated RF amplifieroperation
November 1992
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SD4600
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC (Total Device)
Symbol Test Conditions
BV
BV
BV
I
CBO
EBO
CEO
CEO
h
FE
IC= 100mA 60 — — V
IE= 20mA 3.5 — — V
IC= 100mA 28 — — V
VCE= 25V — — 30 mA
VCE= 5V IC= 3A 25 — 80 —
Min. Typ. Max.
Value
DYNAMIC (Total Device)
Symbol Test Conditi ons
P
OUT
η
cf=960MHz VCC= 26V ICQ= .200A 50 58 — %
G
P
f = 960MHz VCC= 26V ICQ= .200A 60 65 — W
f = 960MHz VCC= 26V ICQ= .200A 7.5 8.0 — dB
Value
Min. Typ. Max.
VSWR f = 960MHz VCC= 26V 5:1 — — —
Unit
Unit
TYPICA L PERFO R MA NCE
POWER OUTPUT & COLLECTOR
EFFICIENCY vs POWER INPUT
P
OUT
η
C
FREQ=960MHz
V
26V
=
CC
I
200mA
=
CQ
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IMPEDA NCE DAT A
TYPICAL INPUT
IMPEDANCE
Z
IN
SD4600
Z
CL
L
TYPICAL COLLECTOR
LOAD IMPEDANCE
Z
CL
FREQ. ZIN(Ω)ZCL(Ω)
860MHz 17+j10 11+j12
900 MHz 14 + j 10 10 + j 10.5
960 MHz 12.5 + j 8 8.5 + j 8.5
TEST CIRCUIT
H
H
Z
P
= 60W
OUT
VCC= 26V
Normalized to 50ohms
L
IN
C1,C10: 120pF Chip Capacitor B Size
C2,C5
C11,C14: 470pF Chip Capacitor B Size
C6,C7 : 100µF Electrolytic Capacitor
C8 : 4.7µF Electrolytic Capacitor
C9 : 10µF Electrolytic Capacitor
C15 : 39,000pF Chip Capacitor
C16 : 63µF Capacitor
C17 : .6 - 4.5pF Johanson Variable Capacitor
C18 : .8 - 8.0pF Johanson Variable Capacitor
R1, R2 : 20Ω(.5W) Chip Resistor
R3 : 10K Potentiometer
R4 : 4 3.17KΩ(.25W) Chip Resistor
S1 : Teflon Glass Er=2.33 H=.020
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SD4600
PACKAGE MECHANICAL DATA
Ref. Dwg. No.: 12-0173
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license isgranted by implication or otherwise under any patent orpatent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to changewithout notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsinlife support devices or systemswithout express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All RightsReserved
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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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