SGS Thomson Microelectronics SD4590 Datasheet



800-960 MHz CELLULAR BASE STATION

ν GOLDMETALLIZATION ν DIFFUSED EMITTER BALLASTING ν INTERNAL INPUT/OUTPUT MATCHING ν COMMONEMITTER CONFIGURATION ν DESIGNEDFORLINEAROPERATION HIGH

SATURATED POWER CAPABILITY26 VOLT, 900 MHz PERFORMANCE

ν P

ν INHERENT RUGGEDNESS:

ν ESDSENSITIVITY, CLASS 3 (MIL STD-883D

DESCRIPTION

The SD4590 is designed for both analog and digital cellular base stations over the 800 to 960 MHz frequency range, specifically those systems requiring the high linearity and efficiency afforded by class AB operation. Integrated input/output pre-matching simplifies amplifier design. Ruggedness, MTTF, and linearity are enhanced using diffused emitter resistors and refractory/goldmetallization.

=150WMIN.

OUT

GAIN = 8.5 dB MIN. IMD

=-28dB MAX. @ P

3

=150W PEP

OUT

LOADMISMATCH TOLERANCE OF 5:1 MIN. VSWR 3 dB OVERDRIVECAPABILITY

METHOD3015)

SD4590

RF POWER TRANSISTORS

M208

epoxy sealed

ORDERCODE BRANDING

SD4590 SD4590

PIN CONNECTION

1. Collector 3.Base

2. Emitter

ABSOLUTE MAXIMUM RATINGS (T

Symb o l Parameter Val u e Uni t

V V V

P

DISS

T

Collector-Base Voltage 65 V

CBO

Collector-Em it ter Voltage 28 V

CEO

Emitter-Bas e Voltage 3.5 V

EBO

Device Current 25 A

I

C

Power Diss ip at ion 300 W Max. Oper ating J unc t i on Tem pe r at ure 200

T

j

Storage Temperature -65 t o 150

STG

case

=25oC)

THERMAL DATA

R

th(j-c)

March 2000

Junct ion- Ca se Therm al Resistance 0.60

o o

o

C/W

C C

1/8

SD4590

ELECTRICAL SPECIFICATION (T

case

=25oC)

STATIC

Symb o l Para met er Mi n . Typ. Max. Uni t

BV

CBOIC

BV

CEOIC

BV

CER IC = 100 mA R

BV

EBOIC

I

CEO

I

CEO

I

EBO

I

EBO

h

FE

TESTED PER SIDE

= 100 mA VBE=0V 65 80 V = 100 mA IB=0mA 28 30 V

BE

=80 Ω

33 40 V

=50mA IC=0mA 3.5 4.0 V VCE=26V VBE=0V 10 mA VCE=10V VBE=0V 0.5 mA VBE=1V VCE=0V 0.1 mA VBE=2.5V VCE=0V 3 mA VCE=5V IC=6A 25 45 120

REF 1016365E

DYNAMIC

Symb o l Para met er Mi n . Typ. Max. Uni t

C

f=1MHz VCB=26V

OB

for information only - thi s part is col lector matc hed

75 pF

DYNAMIC (CW)

Symb o l Para met er Mi n . Typ. Max. Uni t

P

OUT

G

η

P

1dB

OVD f = 900 MHz V

f = 900 M H z VCE=26V ICQ= 2x 200 m A P

IN

= 150 W 21 W

OUT

f = 900 M H z VCE=26V ICQ= 2x 200 m A PIN= 21 W 150 175 W f = 900 M H z VCE=26V ICQ= 2x 200 m A P

P

f = 900 M H z VCE=26V ICQ= 2x 200 m A P

C

= 150 W 8.5 9 .5 dB

OUT

= 150 W 50 55 %

OUT

f = 900 M H z VCE=26V ICQ= 2x 200 m A 150 160 W

No D egr at a t ion in Device

Perf or mance

Set P

=26V ICQ= 2x 200 m A

CE

= 150 W P EP; I ncrease PIN3dB

OUT

DYNAMIC (Two-Tone)

Symb o l Para met er Mi n . Typ. Max. Uni t

*G

*η

*IM D

*Load

Mismatch

*OVD V

Note : f1= 900.00 MHz

f

VCE=26V ICQ= 2x 200 m A P

P

VCE=26V ICQ= 2x 200 m A P

C

VCE=26V ICQ= 2x 200 m A P

3

V

=26V ICQ= 2x 200 m A P

CE

VSW R = 5:1 MIN @ All Phase Angles

=26V ICQ= 2x 200 m A

Set P

=900.10 MHz

2

CE

= 150 W P EP; I ncrease PIN3dB

OUT

= 150 W P EP 8.5 9 . 5 dB

OUT

= 150 W PEP 30 35 %

OUT

= 150 W PEP -32 -28 dBT

OUT

=150WPEP

OUT

No D egr at a t ion in Device

Perf or mance

No D egr at a t ion in Device

Perf or mance

2/8

TYPICALPERFORMANCE

SD4590

OutputPower vs Input Power

VCE = 26V

= 400mA

I

CQ

860 MHz

OutputPower vs Supply Voltage

FREQ = 900MHz

= 400mA

I

CQ

OutputPower vs Frequency

900 MHz

960 MHz

V

CE

I

CQ

= 26V

= 400mA

P

=

IN

36W 30W

24W 18W

12W

6W

IntermodulationDistortionvs OutputPower

36W

=

P

IN

24W

16W

8W

ORDER

=900.00MHz

F

1

=900.10MHz

F

2

= 26V

V

CE

= 400mA

I

CQ

RD

3

TH

5

TH

7

TH

9

PowerGain vs Output Power

I

=

CQ

1200mA

900mA

600mA

400mA

300mA

FREQ= 900MHz

=26mA

V

CE

BroadbandPerformance

POWER GAIN (dB)

R

L

IMD

η

P V I

C

OUT CE

CQ

P

G

=150WPEP

= 26V

= 400mA

3/8