800-960 MHz CELLULAR BASE STATION
ν GOLDMETALLIZATION
ν DIFFUSED EMITTER BALLASTING
ν INTERNAL INPUT/OUTPUT MATCHING
ν COMMONEMITTER CONFIGURATION
ν DESIGNEDFORLINEAROPERATION HIGH
SATURATED POWER CAPABILITY26 VOLT,
900 MHz PERFORMANCE
ν P
ν INHERENT RUGGEDNESS:
ν ESDSENSITIVITY, CLASS 3 (MIL STD-883D
DESCRIPTION
The SD4590 is designed for both analog and
digital cellular base stations over the 800 to 960
MHz frequency range, specifically those systems
requiring the high linearity and efficiency afforded
by class AB operation. Integrated input/output
pre-matching simplifies amplifier design.
Ruggedness, MTTF, and linearity are enhanced
using diffused emitter resistors and
refractory/goldmetallization.
=150WMIN.
OUT
GAIN = 8.5 dB MIN.
IMD
=-28dB MAX. @ P
3
=150W PEP
OUT
LOADMISMATCH TOLERANCE OF
5:1 MIN. VSWR
3 dB OVERDRIVECAPABILITY
METHOD3015)
SD4590
RF POWER TRANSISTORS
M208
epoxy sealed
ORDERCODE BRANDING
SD4590 SD4590
PIN CONNECTION
1. Collector 3.Base
2. Emitter
ABSOLUTE MAXIMUM RATINGS (T
Symb o l Parameter Val u e Uni t
V
V
V
P
DISS
T
Collector-Base Voltage 65 V
CBO
Collector-Em it ter Voltage 28 V
CEO
Emitter-Bas e Voltage 3.5 V
EBO
Device Current 25 A
I
C
Power Diss ip at ion 300 W
Max. Oper ating J unc t i on Tem pe r at ure 200
T
j
Storage Temperature -65 t o 150
STG
case
=25oC)
THERMAL DATA
R
th(j-c)
March 2000
Junct ion- Ca se Therm al Resistance 0.60
o
o
o
C/W
C
C
1/8
SD4590
ELECTRICAL SPECIFICATION (T
case
=25oC)
STATIC
Symb o l Para met er Mi n . Typ. Max. Uni t
BV
CBOIC
BV
CEOIC
BV
CER IC = 100 mA R
BV
EBOIC
I
CEO
I
CEO
I
EBO
I
EBO
h
FE
TESTED PER SIDE
= 100 mA VBE=0V 65 80 V
= 100 mA IB=0mA 28 30 V
BE
=80 Ω
33 40 V
=50mA IC=0mA 3.5 4.0 V
VCE=26V VBE=0V 10 mA
VCE=10V VBE=0V 0.5 mA
VBE=1V VCE=0V 0.1 mA
VBE=2.5V VCE=0V 3 mA
VCE=5V IC=6A 25 45 120
REF 1016365E
DYNAMIC
Symb o l Para met er Mi n . Typ. Max. Uni t
C
f=1MHz VCB=26V
OB
for information only - thi s part is col lector matc hed
75 pF
DYNAMIC (CW)
Symb o l Para met er Mi n . Typ. Max. Uni t
P
P
OUT
G
η
P
1dB
OVD f = 900 MHz V
f = 900 M H z VCE=26V ICQ= 2x 200 m A P
IN
= 150 W 21 W
OUT
f = 900 M H z VCE=26V ICQ= 2x 200 m A PIN= 21 W 150 175 W
f = 900 M H z VCE=26V ICQ= 2x 200 m A P
P
f = 900 M H z VCE=26V ICQ= 2x 200 m A P
C
= 150 W 8.5 9 .5 dB
OUT
= 150 W 50 55 %
OUT
f = 900 M H z VCE=26V ICQ= 2x 200 m A 150 160 W
No D egr at a t ion in Device
Perf or mance
Set P
=26V ICQ= 2x 200 m A
CE
= 150 W P EP; I ncrease PIN3dB
OUT
DYNAMIC (Two-Tone)
Symb o l Para met er Mi n . Typ. Max. Uni t
*G
*η
*IM D
*Load
Mismatch
*OVD V
Note : f1= 900.00 MHz
f
VCE=26V ICQ= 2x 200 m A P
P
VCE=26V ICQ= 2x 200 m A P
C
VCE=26V ICQ= 2x 200 m A P
3
V
=26V ICQ= 2x 200 m A P
CE
VSW R = 5:1 MIN @ All Phase Angles
=26V ICQ= 2x 200 m A
Set P
=900.10 MHz
2
CE
= 150 W P EP; I ncrease PIN3dB
OUT
= 150 W P EP 8.5 9 . 5 dB
OUT
= 150 W PEP 30 35 %
OUT
= 150 W PEP -32 -28 dBT
OUT
=150WPEP
OUT
No D egr at a t ion in Device
Perf or mance
No D egr at a t ion in Device
Perf or mance
2/8
TYPICALPERFORMANCE
SD4590
OutputPower vs Input Power
VCE = 26V
= 400mA
I
CQ
860 MHz
OutputPower vs Supply Voltage
FREQ = 900MHz
= 400mA
I
CQ
OutputPower vs Frequency
900 MHz
960 MHz
V
CE
I
CQ
= 26V
= 400mA
P
=
IN
36W
30W
24W
18W
12W
6W
IntermodulationDistortionvs OutputPower
36W
=
P
IN
24W
16W
8W
ORDER
=900.00MHz
F
1
=900.10MHz
F
2
= 26V
V
CE
= 400mA
I
CQ
RD
3
TH
5
TH
7
TH
9
PowerGain vs Output Power
I
=
CQ
1200mA
900mA
600mA
400mA
300mA
FREQ= 900MHz
=26mA
V
CE
BroadbandPerformance
POWER GAIN (dB)
R
L
IMD
η
P
V
I
C
OUT
CE
CQ
P
G
=150WPEP
= 26V
= 400mA
3/8
SD4590
SERIESEQUIVALENTINPUT/OUTPUTIMPEDANCES
Z
IN
A
B
B
A
CONDITIONS:
V
=26V
CE
= 2 X200mA
I
CQ
POUT= 150WPEP
≤ -28dBT
IMD
3
(∆ f1 f2 = 100KHz)
Z
CL
NOTE:A = 800MHz
B= 1000MHz
(Measuredin 10MHzincrements)
FREQ. Z
800 MHz 4.25 +j 12.25 5.75 − j 4.25
820 MHz 4.75 +j 13.25 5.00 − j 2.75
840 MHz 5.25 +j 12.50 5.50 − j 2.50
860 MHz 4.75 +j 10.25 5.00 − j 3.00
880 MHz 6.25 +j 9.00 4.60 − j 2.90
900 MHz 7.75 +j 10.25 4.25 − j 2.90
920 MHz 6.50 +j 11.50 3.95 − j 2.90
940 MHz 6.50 +j 10.25 3.80 − j 2.80
960 MHz 8.50 +j 9.50 3.40 − j 2.85
980 MHz 9.25 +j 11.50 3.10 − j 3.00
1000 MHz 8.50 +j 13.25 2.75 − j 3.15
(Ω)Z
IN
CL
(Ω)
4/8
TEST CIRCUIT SCHEMATIC
SD4590
TEST CIRCUIT COMPONENT PART LIST
PCB ROGERS,
Balun 1,2 50 Ω Coaxial Cable Lenght 2.2” attachedto 2x 50 Ω printed microstrip
transmissionlines (see photomaster)
C1, C2, C23, C25 75pFCeramicChip ATC B
C3, C4, C21, C22 2 x 47pF Ceramic Chip, ATC B
C5, C16 0.8- 8pFVariable, JOHANSONGiga - Trim
C6, C9 750pF Ceramic Chip, ATC B
C7, C10 39nFCeramicChip, ATCB
C8, C11, C24,C26 47µF, 50V Electrolytic
C13, C17 100µF,50V Electrolytic
C12 9.1pF, CeramicChip, ATC A
C14, C18 39nF CeramicChip (OPTIONAL)
C15, C19 750pFCeramicChip (OPTIONAL)
C20 1.3pFCeramicChip, ATC B
L1, L4, L5, L8 12 Turns,#200AWG, 0.15” I.D. (Tight)
L2, L3, L6, L7 4 Turns, #20AWG,0.13” I.D.(1:1)
R1, R2, R3, R4 5 X 50 Ω ChipResistor
εr = 2.55, Height= 31.25 mil 1 oz. Cu.
5/8
SD4590
TESTCIRCUIT PHOTOMASTER
6/8
SD4590
7/8
SD4590
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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