SGS Thomson Microelectronics SD4100 Datasheet
470 - 860 MHz
•
28 VOLTS
•
CLASS AB PUSH PULL
•
DESIGNED FOR HIGH POWER LINEAR
•
OPERATION
HIGH SATURATED POWER CAPABILITY
•
INTERNAL INPUT/OUTPUT MATCHING
•
NETWORKS PROVIDE HIGH BALANCED
IMPEDANCES FOR SIMPLIFIED CIRCUIT
DESIGN AND WIDE INSTANTANEOUS
BANDWIDTH
GAIN = 8.5 dB MIN.
•
P
•
•
= 100 W MIN. CW
OUT
= 125 W PEAK SYNC
P
OUT
SD4100
RF POWER TRANSISTORS
UHF TV/LINEAR APPLICATIONS
M173
epoxy sealed
ORDER CODE
SD4100
PIN CONNECTION
BRANDING
SD4100
1
1
DESCRIPTION
3
The SD41 00 is a gold metallized epitaxial s ilicon
NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation
in UHF and Band IV, V television transmitters and
transposers.
1. Collector
2. Base
0
= 25
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
P
T
CBO
CEO
EBO
I
C
DISS
T
STG
Collector-Base Voltage 65 V
Collector-Emitter Voltage 32 V
Emitter-Base Voltage 3.5 V
Device Current 16 A
Power Dissipation 220
Junction Temperature +200
J
Storage Temperature -65 to +150
(T
CASE
C)
2
2
3. Emitter
THERMA L D ATA
R
th(j-c)
Junction-Case Thermal Resistance 0.8
0
0
0
C/W
W
C
C
1/4Jun 2000
SD4100
ELECTRICAL SPECIFICATION
(T
CASE
= 25 0C)
STATIC
Symbol Test Conditions Min. Typ. Max. Unit
BV
CBOIC
BV
CEOIC
BV
CERIC
BV
EBOIE
I
CEO
h
FE
= 40 mA IE = 0 mA
= 80 mA IB = 0 mA
= 120 mA RBE = 75 Ω
= 20 mA IC = 0 mA
VCE = 28 V IB = 0 mA
VCE = 5 V IC = 4 A
65 --- --- V
32 --- --- V
40 --- --- V
3.5 --- --- V
--- --- 10 mA
25 --- 120 ---
REF.1017623C
DYNAMIC
Symbol Test Conditions Min. Typ. Max. Unit
C
OB
f = 1 MHz VCB = 28 V (each side)
C
OB is not measurable due to Internal Output Matching Network
--- 50 --- pF
DYNAMIC
(CW)
Symbol Test Conditions Min. Typ. Max. Unit
P
1dB
G
η
Load
Mismatch
DYNAMIC
f = 860 MHz P
f = 860 MHz P
P
f = 860 MHz P
C
f = 860 MHz P
= 25 W VCC = 28 V ICQ = 200 mA
REF
= 100 W VCC = 28 V ICQ = 200 mA
OUT
= 100 W VCC = 28 V ICQ = 200 mA
OUT
= 100 W VCC = 28 V ICQ = 200 mA
OUT
ALL PHASE ANGLES
(VIDEO - STANDARD BLACK LEVEL)
100 --- --- W
8.5 --- --- dB
55 --- ---
3:1 --- - -- VSWR
Symbol Test Conditions Min. Typ. Max. Unit
G
P
1dB
P
1dB
f = 860 MHz P
P
f = 860 MHz P
f = 860 MHz P
= 125 W VCC = 28 V ICQ = 200 mA
OUT
= 25 W VCC = 28 V ICQ = 200 mA
REF
= 25 W VCC = 32 V ICQ = 100 mA
REF
8.5 --- --- dB
125 --- --- W
150 --- --- W
%
2/4
Loading...