
470 - 860 MHz
•
28 VOLTS
•
CLASS AB PUSH PULL
•
DESIGNED FOR HIGH POWER LINEAR
•
OPERATION
HIGH SATURATED POWER CAPABILITY
•
INTERNAL INPUT/OUTPUT MATCHING
•
NETWORKS PROVIDE HIGH BALANCED
IMPEDANCES FOR SIMPLIFIED CIRCUIT
DESIGN AND WIDE INSTANTANEOUS
BANDWIDTH
GAIN = 8.5 dB MIN.
•
P
•
•
= 100 W MIN. CW
OUT
= 125 W PEAK SYNC
P
OUT
SD4100
RF POWER TRANSISTORS
UHF TV/LINEAR APPLICATIONS
M173
epoxy sealed
ORDER CODE
SD4100
PIN CONNECTION
BRANDING
SD4100
1
1
DESCRIPTION
3
The SD41 00 is a gold metallized epitaxial s ilicon
NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation
in UHF and Band IV, V television transmitters and
transposers.
1. Collector
2. Base
0
= 25
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
P
T
CBO
CEO
EBO
I
C
DISS
T
STG
Collector-Base Voltage 65 V
Collector-Emitter Voltage 32 V
Emitter-Base Voltage 3.5 V
Device Current 16 A
Power Dissipation 220
Junction Temperature +200
J
Storage Temperature -65 to +150
(T
CASE
C)
2
2
3. Emitter
THERMA L D ATA
R
th(j-c)
Junction-Case Thermal Resistance 0.8
0
0
0
C/W
W
C
C
1/4Jun 2000

SD4100
ELECTRICAL SPECIFICATION
(T
CASE
= 25 0C)
STATIC
Symbol Test Conditions Min. Typ. Max. Unit
BV
CBOIC
BV
CEOIC
BV
CERIC
BV
EBOIE
I
CEO
h
FE
= 40 mA IE = 0 mA
= 80 mA IB = 0 mA
= 120 mA RBE = 75 Ω
= 20 mA IC = 0 mA
VCE = 28 V IB = 0 mA
VCE = 5 V IC = 4 A
65 --- --- V
32 --- --- V
40 --- --- V
3.5 --- --- V
--- --- 10 mA
25 --- 120 ---
REF.1017623C
DYNAMIC
Symbol Test Conditions Min. Typ. Max. Unit
C
OB
f = 1 MHz VCB = 28 V (each side)
C
OB is not measurable due to Internal Output Matching Network
--- 50 --- pF
DYNAMIC
(CW)
Symbol Test Conditions Min. Typ. Max. Unit
P
1dB
G
η
Load
Mismatch
DYNAMIC
f = 860 MHz P
f = 860 MHz P
P
f = 860 MHz P
C
f = 860 MHz P
= 25 W VCC = 28 V ICQ = 200 mA
REF
= 100 W VCC = 28 V ICQ = 200 mA
OUT
= 100 W VCC = 28 V ICQ = 200 mA
OUT
= 100 W VCC = 28 V ICQ = 200 mA
OUT
ALL PHASE ANGLES
(VIDEO - STANDARD BLACK LEVEL)
100 --- --- W
8.5 --- --- dB
55 --- ---
3:1 --- - -- VSWR
Symbol Test Conditions Min. Typ. Max. Unit
G
P
1dB
P
1dB
f = 860 MHz P
P
f = 860 MHz P
f = 860 MHz P
= 125 W VCC = 28 V ICQ = 200 mA
OUT
= 25 W VCC = 28 V ICQ = 200 mA
REF
= 25 W VCC = 32 V ICQ = 100 mA
REF
8.5 --- --- dB
125 --- --- W
150 --- --- W
%
2/4

M173 (.438 X .450 4/L N/HERM W/FLG) MECHANICAL DATA
SD4100
DIM.
A 1.40 .055
B 3.05 3.30 .120 .130
C 19.94 .785
D 11.56 11.81 .455 .465
E 3.30 .130
F 5.84 .230
G 21.44 .844
H 27.81 28.07 1.095 1.105
J 13.34 13.59 .525 .535
K 0.05 0.13 .002 .005
L 1.40 1.6 5 .0 55 .065
M 2.03 2.41 .080 .095
N 4.95 .195
P 11.30 11.56 .445 .455
MIN. TYP. MAX MIN. TYP. MAX
mm Inch
1010999C
3/4

SD4100
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise unde r any patent or patent rights of STMicroelectronics. Speci fications me nt i oned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics produ ct s are not
authorized for use as crit i cal component s in l i fe support dev i ces or systems without express written approval of STMic roelectronics.
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