Datasheet SD4017 Datasheet (SGS Thomson Microelectronics)

RF & MICROWAVE TRANSISTORS

806-96 0 MHz CELLULAR BASE STA TION S

.GOLD METALLIZATION

.DIFFUSED EMITTER BALLASTING

.INTERNAL INPUT MATCHING

.DESIGNED FOR LINEAR OPERATION

.HIGH SATURATED POWER CAPABILITY

.COMMON EMITTER CONFIGURATION

.P

.

η

OUT

C

30 W MIN. WITH 7.5 dB GAIN

=

55% TYPICAL

=

.TYPICAL LOAD MI SMATC H C APABILITY:

20:1 ALL ANGLES RATED C ON D ITIONS
10:1 ALL ANGLES @ ± 20% RATED
VOLTAGE

.TYPICAL OVERDRIVE SURVIVABILI T Y

5dB

.230 6LF L (M142)

ORDER CODE

SD4017

PIN CONNE C TIO N

SD4017

epoxy sealed

BRANDING

SD4017

DESCRIPTI ON

The SD4017 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity class AB operation for
cellular base station applications.

ABSOLU TE MAXI MUM RATINGS (T

Symbol Parameter Value Unit

V

CBO

V

CEO

V

EBO

P

DISS

I

C

T

J

T

STG

THERMA L DAT A

R

TH(j-c)

July 19, 1994

Collector-Base Voltage 48 V
Collector-Emitter Voltage 25 V
Collector-Supply Voltage 3.5 V
Power Dissipation 88 W
Device Current 7.5 A
Junction Temperature 200
Storage Temperature − 65 to +150

Junction-Case Thermal Resistance 2.0 °C/W

case

= 25°C)

1. Collector 3. Emitter

2. Base

°

C

°

C

1/7

SD4017

ELEC TRICAL SPECIFICATIO N S (T

case

=

25°C)

STATIC

Symbol Test Condi tions

BV

CBOIC

BV

EBOIE

BV

CEOIC

BV

CERIC

I

CBO

h

FE

= 100 mA 48 55 — V
= 10 mA 3.5 5 — V
= 40 mA 25 28 — V
= 40 mA RBE= 150 Ω 30 40 — V

VCE= 24 V 10 — — mA
VCE= 20 V IC= 2 A 15 40 100 —

DYNAMIC

Symb ol Test Conditi ons

P

OUT

η

P

C

OB

IMD

f = 860 MHz V

cf=860 MHz V

f = 860 MHz V

G

25 V I

CE =

25 V I

=

CE

25 V I

=

CE

VCB = 25 V fo= 1 MHz — 42 — pf
P

3

= 30 WPEP f1= 860.0 MHz f2= 860.1 MHz — −35 — dBc

OUT

VSWR1VSWR = 20:1 VCE= 25 V

VSWR = 10:1 VCE= 25 V ± 20%

VSWR2VSWR = 5:1 VCE= 25V ± 20%

PIN= PIN(norm) +3dB

OVD PIN(norm) = +5dB VCE = 25 V

PIN(norm) = +3dB VCE= 25 V ± 20%

Value

Min. T yp. Max.

Value

Min. Typ. Max.

60 mA 30 — — W

CQ =

60 mA — 55 — %

=

CQ

60 mA 7.5 9 — dB

=

CQ

No Degradation in

Output Device

No Degradation in

Output Device

No Degradation in

Output Device

Uni t

Unit

Typ.

Typ.

Typ.

2/7

TYPICAL PERFORMAN CE

SD4017

DC CURRENT GAIN vs COLLECTOR CURRENT

85

80

75

70

65

60

55

h

50

F
E

45

40

35

30

25

20

15

012345

Pulsed Measurement

COLLECTOR CURRENT ACOLLECTOR CURRENT A

Vce = 25V

V

25V

=

CE

Vce = 20V

V

20V

=

CE

OUTPUT CAPACITANCEvs C-B VOLTAGE

150

140

130

120

110

C
O

100

B

90

80

p
F

70

60

50

40

30

024681012141618202224262830

COLLECTOR VOLTAGE VCOLLECTOR VOLTAGE V

F

1

I

C

=

=

1MHz

0

DC SAFE OPERATING AREA

10

I

C

M
A
X

1

I
M
U
M

A

BVCER

0.1
0 1020304050

C-E BREAKDOWN VOLTAGE VC-E BREAKDOWN VOLTAGE V

POWER GAIN vs CASE TEMPERATURE

9.4

P

9.2

P
O

9

W

8.8

E
R

8.6

8.4

G
A

8.2

I

8

N

d

B

Output Power Held

7.8

Constant=30WCW

V

25V

=

7.6

7.4

7.2

CE

I

60mA

=

CQ

25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105

CASE TEMPERATURE CCASE TEMPERATURE C

∆

-0.03dB/°C

GAIN

3/7

SD4017

TYPICAL PERFO RM AN CE (cont ’d )

OUTPUT POWER vs INPUT POWER

40

O

U

35

T
P

30

U
T

25

P

20

O
W

15

E
R

10

W

5

C

W

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5

INPUT POWER WCWINPUT POWER WCW

V
I

CE

CQ

=

=

25V

60mA

OUTPUT POWER & GAIN vs VOLTAGE

50

O
U

45

T
P

40

U
T

35

P

30

O

W

25

E
R

20

W

15

C

W

10

14 16 18 20 22 24 26 28 30 32 34 36

Input Power Set=3.5WCW
I

CQ

COLLECTOR VOLTAGE V

COLLECTOR VOLTAGE V

P

G

Pg

Pout

P

OUT

Constant = 60mA

P
O

10

W

E
R

G
A

I

N

d
B

1

IM DISTORTION vs OUTPUT POWER

-25

-30

-35

I
M
D

-40

d

B

-45

F

860.0MHz

=

-50

-55
0 5 10 15 20 25 30 35 40 45

1

F

860.1MHz

=

2

Two Tones @ PEP-6dB each tone

OUTPUT POWER WPEPOUTPUT POWER WPEP

IM3 DISTORTION vs SUPPLY VOLTAGE

-18

-20

IM3

IM5

IM7

-22

-24

I

M

-26

D

-28

3

-30

d

B

-32

-34

-36

-38
18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36

NO TUNINGfor SHIFT inLOAD LINE with VOLTAGE

P

Set = 30WPEP

OUT

No ICQAdj for V

COLLECTOR VOLTAGE VCOLLECTOR VOLTAGE V

CE

4/7

IMPEDA NCE DATA

TYPICAL INPUT

IMPEDANCE

Z

IN

TYPICAL COLLECTOR

LOAD I MPEDANCE

SD4017

Z

CL

800MHz

800MHz

960MHz

FREQ. ZIN(Ω)Z

CL

(Ω)
800 MHz 4.3 + j 5.8 3.5 + j 0.2
830 MHz 3.2 + j 6.1 3.5 + j 0.1
860 MHz 3.5 + j 7.1 2.9 − j 0.2
900 MHz 5.3 + j 6.4 3.0 − j 0.6
915 MHz 6.1 + j 6.3 3.2 − j 0.7
930 MHz 9.4 + j 6.3 3.2 − j 1.1
945 MHz 6.6 + j 3.0 3.3 − j 1.2
960 MHz 5.9 + j 1.0 3.4 − j 1.5

960MHz

P

= 30W

OUT

VCE= 25 V
Normalized to 50 ohms

5/7

SD4017

TEST CIRCUIT

C1, C19 : 33pF ATC 100B Chip Capacitor
C2, C15 : 3.6pF ATC 100B Chip Capacitor
C3 : 4.5pF ATC 100B Chip Capacitor
C4, C16
C17 : 5.0pF ATC 100B Chip Capacitor
C5 : 2.9pF ATC 100B Chip Capacitor
C6, C7 : 1.8pF ATC 100B Chip Capacitor
C8,C9,
C14 : 6.2pF ATC 100B Chip Capacitor
C10,C22 : 300pF ATC 100B Chip Capacitor
C11,C12

C13 : 5.6pF ATC 100B Chip Capacitor
C18 : .5 - 6.0pF Gigatrim Adjustable Capacitor

BOAR D LAYOUT

C20 : 10pF ATC 100B Chip Capacitor
C21 : 10µF (50V) Electrolytic Capacitor
L9 : 4 Turns (tight) I.D. 120mil ENAM Cu 20 AWG
L10 : 4 Turns (tight) I.D. 158mil ENAM Cu 18 AWG
L11 : 1.5 Turns VK-200 Ferrite H.F.Choke
TL1,TL8 : 964 x 85.69 mils (50Ω/36.84°)
TL2,TL3 : 352 x 85.69 mils (50Ω/13.46°)
TL4 : 222 x 109.03 mils (42.6Ω/8.56°)
TL5 : 149 x 109.03 mils (42.6Ω/5.74°)
TL6 : 334 x 85.69 mils (50Ω/12.75°)
TL7 : 500 x 85.69 mils (50Ω/19.13°)

Board MAterial: 1oz Copper 2 sides, Thickness = 31.25mil

Er = 2.55

6/7

PACKAGE MECHANICAL DATA

Ref. Dwg.No. 12-0142 rev. C

SD4017

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.

1994 SGS-THOMSON Microelectronics - All Rights Reserved

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