SGS Thomson Microelectronics SD4017 Datasheet

RF & MICROWAVE TRANSISTORS

806-96 0 MHz CELLULAR BASE STA TION S

.GOLD METALLIZATION

.DIFFUSED EMITTER BALLASTING

.INTERNAL INPUT MATCHING

.DESIGNED FOR LINEAR OPERATION

.HIGH SATURATED POWER CAPABILITY

.COMMON EMITTER CONFIGURATION

.P

.

η

OUT

C

30 W MIN. WITH 7.5 dB GAIN

=

55% TYPICAL

=

.TYPICAL LOAD MI SMATC H C APABILITY:

20:1 ALL ANGLES RATED C ON D ITIONS 10:1 ALL ANGLES @ ± 20% RATED VOLTAGE

.TYPICAL OVERDRIVE SURVIVABILI T Y

5dB

.230 6LF L (M142)

ORDER CODE

SD4017

PIN CONNE C TIO N

SD4017

epoxy sealed

BRANDING

SD4017

DESCRIPTI ON

The SD4017 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity class AB operation for cellular base station applications.

ABSOLU TE MAXI MUM RATINGS (T

Symbol Parameter Value Unit

V

CBO

V

CEO

V

EBO

P

DISS

I

C

T

J

T

STG

THERMA L DAT A

R

TH(j-c)

July 19, 1994

Collector-Base Voltage 48 V Collector-Emitter Voltage 25 V Collector-Supply Voltage 3.5 V Power Dissipation 88 W Device Current 7.5 A Junction Temperature 200 Storage Temperature − 65 to +150

Junction-Case Thermal Resistance 2.0 °C/W

case

= 25°C)

1. Collector 3. Emitter

2. Base

°

C

°

C

1/7

SD4017

ELEC TRICAL SPECIFICATIO N S (T

case

=

25°C)

STATIC

Symbol Test Condi tions

BV

CBOIC

BV

EBOIE

BV

CEOIC

BV

CERIC

I

CBO

h

FE

= 100 mA 48 55 — V = 10 mA 3.5 5 — V = 40 mA 25 28 — V = 40 mA RBE= 150 Ω 30 40 — V

VCE= 24 V 10 — — mA VCE= 20 V IC= 2 A 15 40 100 —

DYNAMIC

Symb ol Test Conditi ons

P

OUT

η

P

C

OB

IMD

f = 860 MHz V

cf=860 MHz V

f = 860 MHz V

G

25 V I

CE =

25 V I

=

CE

25 V I

=

CE

VCB = 25 V fo= 1 MHz — 42 — pf P

3

= 30 WPEP f1= 860.0 MHz f2= 860.1 MHz — −35 — dBc

OUT

VSWR1VSWR = 20:1 VCE= 25 V

VSWR = 10:1 VCE= 25 V ± 20%

VSWR2VSWR = 5:1 VCE= 25V ± 20%

PIN= PIN(norm) +3dB

OVD PIN(norm) = +5dB VCE = 25 V

PIN(norm) = +3dB VCE= 25 V ± 20%

Value

Min. T yp. Max.

Value

Min. Typ. Max.

60 mA 30 — — W

CQ =

60 mA — 55 — %

=

CQ

60 mA 7.5 9 — dB

=

CQ

No Degradation in

Output Device

No Degradation in

Output Device

No Degradation in

Output Device

Uni t

Unit

Typ.

2/7

TYPICAL PERFORMAN CE

SD4017

DC CURRENT GAIN vs COLLECTOR CURRENT

85

80

75

70

65

60

55

h

50

F E

45

40

35

30

25

20

15

012345

Pulsed Measurement

COLLECTOR CURRENT ACOLLECTOR CURRENT A

Vce = 25V

V

25V

=

CE

Vce = 20V

V

20V

=

CE

OUTPUT CAPACITANCEvs C-B VOLTAGE

150

140

130

120

110

C O

100

B

90

80

p F

70

60

50

40

30

024681012141618202224262830

COLLECTOR VOLTAGE VCOLLECTOR VOLTAGE V

F

1

I

C

=

1MHz

0

DC SAFE OPERATING AREA

10

I

C

M A X

1

I M U M

A

BVCER

0.1 0 1020304050

C-E BREAKDOWN VOLTAGE VC-E BREAKDOWN VOLTAGE V

POWER GAIN vs CASE TEMPERATURE

9.4

P

9.2

P O

9

W

8.8

E R

8.6

8.4

G A

8.2

I

8

N

d

B

Output Power Held

7.8

Constant=30WCW

V

25V

=

7.6

7.4

7.2

CE

I

60mA

=

CQ

25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105

CASE TEMPERATURE CCASE TEMPERATURE C

∆

-0.03dB/°C

GAIN

3/7