SGS Thomson Microelectronics SD4013 Datasheet
RF & MICROWAVE TRANSIST ORS
UHF COMMUNICATIONS APPLICATIONS
.REFRACTORY/GOLD METALLIZATION
.I NTERNAL I NPUT MATCHING
.METAL/CERAMIC PACKAGE
.EMITTER BALLASTED
. 20:1 VSWR CAPABILITY
. P
OUT
25 W MIN. WITH 9 dB GAIN
=
ORDER CODE
SD4013
PIN CONNECTION
SD4013
PRELIMINARY DATA
.500 6LF L (M111)
epoxysealed
BRANDING
SUMIL25
DESCRIPTION
The SD4013 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for superior ruggedness.
The SD4013 canwithstand 20:1 VSWRunder rated
operating conditions andis internally input matched
to optimize power gain and efficiency over the
band.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 60 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 3.5 V
Device Current 3.0 A
Power Dissipation 70 W
Junction Temperature +200
Storage Temperature
Junction-Case ThermalResistance 2.5 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Emitter
65 to +150
−
°
C
°
C
November 1992
1/5
SD4013
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
EBOIE
BV
CESIC
I
CBO
h
FE
= 50mA IE= 0mA 60 — — V
= 5mA IC= 0mA 3.5 — — V
= 50mA VBE= 0mA 60 — — V
VCB= 30V IE= 0mA — — 3.0 mA
VCE= 5V IC= 500mA 10 30 120 —
Min. Typ. Max.
Value
Unit
DYNAMIC
Symbol Test Conditi ons
P
OUT
P
IN
η
cf=400 MHz VCC= 28V 50 55 — %
G
f = 400 MHz VCC= 28V 25 — — W
f = 400 MHz VCC= 28V — — 3.15 W
f = 400 MHz VCC= 28V 9.0 10.5 — dB
P
Value
Min. Typ. Max.
Unit
VSWR f = 400 MHz VCC= 28V 20:1———
COBf = 1 MHz VCB= 28V — — 30 pF
2/5
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