SGS Thomson Microelectronics SD4011 Datasheet
.GOLD METALLIZATION
.INTERNAL INPUT MATCHING
.CO MMON EMITTER
.O VERLAY GEOMETRY
.CLASS A OPERATION
. METAL/CERAMIC PACKAGE
.P
OUT
4WMIN.WITH8dBGAIN
=
SD4011
RF & MICROWAVE TRANSISTORS
UHF TV/L INEAR APPLICATIO NS
.280 4L STUD (M122)
epoxy sealed
ORDER CODE
SD4011
PIN CONNECTION
BRANDING
SUTV040
DESC RIPT ION
The SD4011isa gold metallizedNPN siliconbipolar
device optimized for Class A operation in TV Band
IV/V.
Suitable for a variety of other UHF linear applications, SD4011 is supplied in an industry-standard
.280 stud package.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 65 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 3.5 V
Device Current 1.59 A
Power Dissipation 31.8 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 5.5 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
November 1992
1/5
SD4011
ELECTRICAL SPECIFICATIO NS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
EBOIE
BV
CESIC
BV
CEOIC
I
CBO
h
FE
= 5mA IE= 0mA 65 — — V
= 5mA IC= 0mA 3.5 — — V
= 10mA VBE= 0V 65 — — V
= 5mA IB= 0mA 20 — — V
VCB= 40V IE= 0mA — — 1.0 mA
VC= 5V IC= 800mA 20 — 200 —
DYNAMIC
Symbol Test Conditi ons
P
OUT
G
IMD
C
OB
Note: P
f = 860 MHz VCE= 25 V IC= 850 mA 4 — — W
f = 860 MHz VCE= 25 V IC= 850 mA 8.0 — — dB
P
f = 860 MHz VCE= 25 V IC= 850 mA −60 — — dBc
3
f = 1 MHz VCE= 25 V — 13 20 pF
0.63
=
IN
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICAL PERFORMAN CE
INTERMODULATION DISTORTION
vs POWER OUTPUT
F = 860 MHz
VCE= 25 V
IC= 850 mA
INTERMODULATION DISTORTION
(3 TONES) vs POWER OUTPUT
F = 860 MHz
VCE= 25 V
IC= 850 mA
2/5
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