SGS Thomson Microelectronics SD4010 Datasheet
.470-860 MHz
.26.5 VOLTS
.GOLD METALLIZATION
.P
OUT
20.0W MIN. WITH 9.5 dB GAIN
=
.I NTERNAL INPUT MATCHING
.DIFFUSED EMITTER BALLAST
RESISTORS
SD4010
RF & MICROWAVE TRANSISTORS
UHF TV LIN EAR APPLIC ATIO NS
.400 x .425 4L F L (M119 )
hermetically sealed
ORDER CODE
SD4010
PIN CONNECTION
DESCRIPTI ON
The SD4010 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors. The SD4010 is intended for use in linear
applications up to 1GHz, including UHF television
transmitters, transposers and cellular base stations.
ABSOLUTE MAXIMUM RATINGS (Tc ase = 25°C)
Symbol Parameter Value Uni t
V
V
V
P
T
CBO
CES
EBO
I
C
DISS
T
J
STG
Collector-Base Voltage 60.0 V
Collector-Emitter Voltage 60.0 V
Emitter-Base Voltage 4.0 V
Device Current (Maximum) 11.0 A
Power Dissipation 88.8 W
Junction Temperature +200
Storage Temperature
1. Collector 3. Emitter
2. Base
65 to +150
−
BRANDING
SUTV200
°
C
°
C
THERMA L DATA
R
TH(j-c)
November 1992
Junction-Case Thermal Resistance 1.9 °C/W
1/5
SD4010
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
EBOIE
BV
CESIC
BV
CEOIC
I
CEO
h
FE
TestedPer Side
= 10mA IC= 0mA 3.0 4.0 — V
= 50mA VBE= 0V 60.0 85.0 — V
= 50mA IB= 0mA 28.0 30.0 — V
VCE= 26.5V IE= 0mA — — 5 mA
VCE= 5V IC= 3A 25 50 80 —
DYNAMIC
Symb ol Test Co n di t i o ns
P
OUT
G
IMD
IP
C
OB
Load*
f = 860MHz VCE= 26.5V PIN= 2.2W 20.0 28.0 — W
f = 860MHz VCE= 26.5V P
P
P
3
VCB= 26.5V P
3
= 20W VCE= 26.5V (note 1) — −48 −46 dBc
SYNC
= 20W PEP (note 2) — 55 — dBm
OUT
f = 860MHz VCB= 26.5V (note 3) — 25 36 pF
f = 860MHz VCE= 26.5V P
Mismatch
I
I
2.7A (1.3 5A per S ide)
=
CQ
*VSWRtested for a minimumof 3:1 SWR atall phaseangles.
Note1: Three Tone IMD Testing (CCIR)
f
1
f
2
f
3
=
C
860.0MHz/ −8dB ref. to P
=
863.5MHz/ −16dBref. to P
=
864.5MHz/ −7dB ref. to P
=
-Visual
SYNC
- ColorSubcarrier
SYNC
-Aural
SYNC
Value
Min. Typ. Max.
Value
Min. Typ. Max.
= 20W 9.5 10.5 — dB
OUT
= 20W 3:1 10:1 — VSWR
OUT
Note 2: IP3Calculated Based on Two-Tone
Note 3: T es ted Per Side
IMD Testing:
f
900.0 M Hz/−6dB ref. to P
=
1
f
900.1 M Hz/−6dB ref. to P
=
2
IMD3(Typ) <−36dBc
Uni t
Uni t
OUT
OUT
TYPICA L P ERFO R MA NCE
POWER OUTPUT vs POWER INPUT
2/5
POWER OUTPUT & POWER GAIN vs
TOTAL COLLECTOR CURRENT