SGS Thomson Microelectronics SD2933 Datasheet
HF/VHF/UHF N-CHANNEL MOSFETs
• GOLD METALLIZATION
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
• THERMALLY ENHANCED PACKAGING
DESCRIPTION
The SD2933 is a gold metallized N-Channel MOS
field-effect RF power transistor. It is intended for
use in 50 V DC large signal applications up to 150
MHz
= 300 W MIN. WITH 20 dB GAIN @ 30
OUT
MHz
SD2933
RF POWER TRANSISTORS
ADVANCE DATA
M177
epoxy sealed
ORDER CODE
SD2933
PIN CONNECTION
BRANDING
SD2933
1. Drain
2. Source
3. Gate
ABSOLUTE MAXIMUM RATINGS(T
Symbol Parameter Value Unit
V
(BR)DSS
V
DGR
V
I
P
DISS
T
T
STG
GS
D
Drain Source Volatage 125 V
Drain-Gate Voltage (RGS=1MΩ)
Gate-Source Voltage ±20 V
Drain Current 40 A
Power Dissipation 648 W
Max. Operating Junction Temperature 200
j
Storage Temperature -65 to 150
CASE
=250C)
125 V
4. Source
5. Source
THERMAL DATA
R
th(j-c)
R
th(c-s)
* Determined using a flataluminum or copper heatsink with thermal compound apllied (Dow Corning 340 or equivalent).
Jun 2000
Junction-Case Thermal Resistance
Case-Heatsink Thermal Resistance*
0.27
0.15
0
0
0
C/W
0
C/W
C
C
1/8
SD2933
ELECTRICAL SPECIFICATION(T
CASE
=250C)
STATIC
Symbol Parameter Min. Typ. Max. Unit
V
(BR)DSSVGS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
=0V IDS=200mA
VGS=0V VDS=50V
VGS=20V VDS=0V
VDS=10V ID=250mA
VGS=10V ID=10A
VDS=10V ID=10A
VGS=0V VDS=50V f=1MHz
125 V
10 mA
10 µA
25V
3V
10 mho
1000 pF
VGS=0V VDS= 50 V f = 1 MHz 372 pF
VGS=0V VDS=50V f=1MHz
29 pF
REF. 7170198B
DYNAMIC
Symbol Parameter Min. Typ. Max. Unit
P
OUT
G
PS
f = 30 MHz VDD=50V IDQ= 250 mA 300 400 W
f = 30 MHz VDD=50V P
= 300 W IDQ= 250 mA
OUT
20 23.5 dB
η
Load
Mismatch
f = 30 MHz VDD=50V P
D
f = 30 MHz V
All Phase Angles
IMPEDANCE DATA
= 300 W IDQ= 250 mA
OUT
=50V P
DD
Frequency
= 300 W IDQ= 250 mA
OUT
Z
(Ω)Z
IN
DL
(Ω)
30 MHz 1.8 - j 0.2 2.8 + j 2.3
108 MHz 1.9 + j 0.2 1.6 + j 1.4
150 MHz 1.9 + j 0.3 1.5 + j 1.6
50 65 %
3:1 VSWR
2/8
TYPICAL PERFORMANCE
Capacitance vs. Drain-Source Voltage
SD2933
Drain Current vs. Gate Voltage
10000
f= 1MHz
1000
100
C, CAPACITANCE(pF)
10
0 1020304050
Vds, DRAIN-SOURCEVOLTAGE (V)
Gate-Source Voltages vs. Case Temperature
1.15
1.1
1.05
1
0.95
0.9
Vdd=10V
0.85
0.8
-25 0 25 50 75 100
Vgs, GATE-SOURCEVOLTAGE (NORMALIZED)
Id=.1A
Id=4 A
Tc, CASETEMPERATURE (ºC)
Id=10 A
Id=7 A
Id=15 A
Id=3 A
Id=2 A
Id=12 A
Id=1 A
Ciss
Coss
Crss
Id=5 A
Id=.25A
15
Vdd= 10V
10
5
Id, DRAIN CURRENT (A)
0
1 1.5 2 2.5 3 3.5 4
Vgs, GATE-SOURCE VOLTAGE (V)
Tc=+25°C
Tc=+80°C
Tc=-20°C
Maximum Thermal Resistance vs. Case Temperature
0.33
0.32
0.31
0.3
0.29
0.28
0.27
Rth(j-c), THERMALRESISTANCE (°C/W)
0.26
25 35 45 55 65 75 85
Tc, CASE TEMPERATURE(°C)
3/8
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