SGS Thomson Microelectronics SD2932 Datasheet
HF/VHF/UHF N-CHANNEL MOSFETs
ν GOLDMETALLIZATION
ν EXCELLENTTHERMAL STABILITY
ν COMMONSOURCE CONFIGURATION,
PUSH-PULL
ν POUT = 300W MIN. WITH 15 dB GAIN @175
MHz
DESCRIPTION
The SD2932is a gold metallized N-ChannelMOS
field-effect RF power transistor. The SD2932 is
intended for use in 50V dc large signal
applicationsup to 250 MHz
SD2932
RF POWER TRANSISTORS
PRELIMINARY DATA
M244
epoxy sealed
ORDERCODE BRANDING
SD2932 TSD2932
PIN CONNECTION
1. Drain 3. Source
2. Gate
ABSOLUTE MAXIMUM RATINGS (T
Symb o l Parameter Val u e Uni t
V
(BR)DSS
V
V
P
T
Drain Sou r ce Volt age 125 V
DGR Drain-G ate Volt age (R
Gat e- Source Voltag e ±20 V
GS
Drain Current 40 A
I
D
Power Diss ip at ion 500 W
DISS
Max. Oper ating Juncti on T emperatur e +200
T
j
Storage Temperature -65 to 1 50
STG
=1MΩ)
GS
case
=25oC)
125 V
THERMAL DATA
R
th(j-c)
R
th(c-s) Case Heats in k Th erm al Resist ance ∗
∗ Determined using a flat aluminumor copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
March 2000
Junct ion- Ca se Therm al Resistance 0.35
0.12
o
o
o
C/W
o
C/W
C
C
1/13
SD2932
ELECTRICAL SPECIFICATION (T
case
=25oC)
STATIC (per section)
Symb o l Para met er Mi n . T yp. Max. Unit
V
(BR)DSSVGS
I
DSS
I
GSS
V
GS(Q)
V
DS(on)VGS
gfs V
C
ISS
C
OSS
C
RSS
=0V IDS= 100 mA 125 V
VGS=0V VDS=50V 5 mA
VGS=20V VDS=0V 5 µA
VDS=10V ID=250mA 2 5 V
= 10V ID=10A 3 V
= 10V ID=5A 5 mho
DS
VGS=0V VDS= 50 V f = 1 M Hz 480 pF
VGS=0V VDS= 50 V f = 1 M Hz 190 pF
VGS=0V VDS=50V f=1MHz 18 pF
REF.7163911A
DYNAMIC
Symb o l Para met er Mi n . T yp. Max. Unit
P
OUT
G
η
Load
Mismatch
f = 175 M H z VDD=50V IDQ= 5 00 mA 300 W
f = 175 M H z VDD=50V P
PS
f = 175 M H z VDD=50V P
D
f = 175 M H z V
DD
=50V P
=300W IDQ= 500 mA 15 16 dB
out
=300W IDQ= 500 mA 50 60 %
out
=300W IDQ= 500 mA
out
5:1 VSWR
All Ph ase Angles
IMPEDANCEDATA
Measured Gate to Gate and Drain toDrain, respectively.
FREQ. ZIN(Ω) ZDL(Ω)
175 MHz 0.92 - j 0.14 3.17 + j 4.34
2/13
SD2932
MaximumThermalResistancevsCase
Temperature
0.42
0.4
0.38
Rth(j-c) (ºC/W)
0.36
0.34
25 30 35 40 45 50 55 60 65 70 75 80 85
Tc, Case Temperature (°C)
Capacitancevs Drain-Source Voltage
10000
1000
Ciss
Coss
DC Safe OperatingArea
100
10
(1)
Ids, DRAIN CURRENT (A)
1
1 10 100 1000
Vds, DRAIN SOURCE VOLTAGE (V)
(1) Currentin this areamay belimitedbyRDS(on)
Twosides,each sectionequallyloaded
DrainCurrentvs Gate Voltage
20
Vds=10 V
15
10
T=-20 °C
T=+25 °C
T=+80 °C
100
C, CAPACITANCE (pF)
10
01020304050
VDS, DRAIN-SOURCE VOLTAGE (V)
Gate Voltage vs Case Temperature
1.15
1.1
1.05
1
0.95
0.9
0.85
0.8
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
-25 0 25 50 75 100
Tcase, CASE TEMPERATURE(°C)
Id=11A
Id=4 A
Id=2 A
Id=10A
Id=.1 A
Id=9 A
Crss
Id=7 A
Id=.25A
5
ID, DRAIN CURRENT (A)
0
2 2.5 3 3.5 4 4.5 5 5.5 6
VGS, GATE-SOURCE VOLTAGE (V)
Id=5 A
Id=1 A
3/13
SD2932
TYPICALPERFORMANCE (175 MHz)
OutputPowervs Input Power
500
400
300
200
100
Pout, OUTPUT POWER (W)
Vdd=50V
Idq=2x 250mA
F=175Mhz
0
0 2 4 6 8 10 12 14 16 18 20 22
Pin, INPUT POWER (W)
Power Gain vs. Output Power
17
16
15
14
13
12
Gp, POWER GAIN (dB)
11
10
0 100 200 300 400 500
Pout, OUTPUT POWER (W)
Vdd=50V
Idq=2x 250mA
F=175Mhz
Vdd=50 V
Vdd=40 V
OutputPowervs Input Power
600
500
400
300
200
Vdd=50V
Idq=2x 250mA
F=175Mhz
Pout, OUTPUT POWER (W)
100
0
0 2 4 6 8 10121416182022
Pin, INPUT POWER(W)
Efficiencyvs. OutputPower
80
70
60
50
40
30
Nc, EFFICIENCY (%)
20
10
0 100 200 300 400 500
Pout, OUTPUT POWER (W)
Vdd=50V
Idq=2 x 250mA
F=175Mhz
T=-20 °C
T=+25 °C
T=+80 °C
OutputPower vs Supply Voltage
450
Idq=2 x 250mA
400
F=175Mhz
350
300
250
200
150
Pout,OUTPUT POWER (W)
100
24 26 28 30 32 34 36 38 40 42 44 46 48 50
Vdd,DRAIN VOLTAGE (V)
4/13
Pin=15.6 W
Pin=7.8 W
Pin=3.9 W
OutputPowervs Gate Voltage
400
300
200
100
Pout, OUTPUT POWER (W)
0
-3 -2 -1 0 1 2 3
VGS, GATE_SOURCE VOLTAGE(V)
T=-20 °C
Vdd=50V
Idq=2x 250mA
F=175Mhz
T=+25 °C
T=+80 °C
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