SGS Thomson Microelectronics SD2931-10 Datasheet



HF/VHF/UHF N-CHANNEL MOSFETs

ν GOLDMETALLIZATION
ν EXCELLENTTHERMALSTABILITY
ν COMMONSOURCE CONFIGURATION
ν POUT= 150W MIN. WITH 14 dB gain@175

MHz

ν THERMALLYENHANCED PACKAGINGFOR

LOWERJUNCTIONTEMPERATURES

SD2931-10

RF POWER TRANSISTORS

ADVANCE DATA

DESCRIPTION

The SD2931-10 is a gold metallized N-Channel
MOS field-effect RF power transistor. Being
electrically identical to the standard SD2931

ORDERCODE BRANDING

SD2931-10 TSD2931-10

M174

epoxy sealed

MOSFET, it is intended for use in 50V dc large
signal applicationsup to 230MHz.

The SD2931-10 is mechanical compatible to the
SD2931 but offers in addition a better thermal
capability (25 % lower thermal resistance),

PIN CONNECTION

representing the best-in-class transistors for ISM
applications.

1. Drain 3.Gate

2. Source 4. Source

ABSOLUTE MAXIMUM RATINGS (T

Symb o l Parameter Val u e Uni t

V

(BR)DSS

V

V

P

T

Drain Sou r ce Volt age 125 V
Drain-G ate Vol t age (RGS=1MΩ) 125 V

DGR

Gat e- Source Voltage ±20 V

GS

Drain Current 20 A

I

D

Power Diss ip at ion 389 W

DISS

Max. Oper ating Junction Temperature 200

T

j

Storage T emperature -65 to 150

STG

case

=25oC)

o

C

o

C

THERMAL DATA

R

th(j-c)

R

th(c-s)

* Determined using a flataluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).

March 2000

Junct ion- Ca se Th er m al Resist ance
Case-Heat s i nk T her mal R es istance ∗

0.45

0.2

o

C/W

o

C/W

1/10

SD2931-10

ELECTRICAL SPECIFICATION (T

case

=25oC)

STATIC

Symb o l Para met er Mi n . Typ . Max. Unit

V

(BR)DSSVGS

I

DSS

I

GSS

V

GS(Q) *

V

DS(ON)VGS

G

FS

C

ISS

C

OSS

C

RSS

*V

sorted with alpha/numeric code marked on unit.

GS(Q)

=0V IDS= 100 mA 125 V
VGS=0V VDS=50V 5 mA
VGS= 20V VDS=0V 5 µA
VDS = 10V ID= 250 mA 2.0 5.0 V

= 10V ID=10A 3.0 V
VDS= 10V ID=5A 5 mho
VGS=0V VDS= 50 V f = 1 M H z 480 pF
VGS=0V VDS= 50 V f = 1 M H z 190 pF
VGS=0V VDS=50V f=1MHz 18 pF

REF. 7165489C

DYNAMIC

Symb o l Para met er Mi n . Typ . Max. Unit

P

OUT

G

η

Load

Mismatch

f = 175 M H z VDD=50V IDQ= 250 mA 150 W
f = 175 M H z VDD=50V P

PS

f = 175 M H z VDD=50V P

D

f = 175 M H z V

DD

=50V P

=150W IDQ= 250 mA 14 15 dB

out

=150W IDQ= 250 mA 55 65 %

out

=150W IDQ=250mA

out

10:1 VSWR

All Phase A ngles

IMPEDANCEDATA

FREQ. ZIN(Ω)Z

30 MHz 1.7 - j 5. 7 6.8 + j 0. 9

175 MHz 1.2 - j 2. 0 2.0 + j 2. 4

2/10

SORTS

V

GS

A 2.0 - 2.1 R 3.5 - 3.6
B 2.1 - 2.2 S 3.6 - 3.7
C 2.2 - 2.3 T 3.7 - 3.8
D 2.3 - 2.4 U 3.8 - 3.9
E 2.4 - 2.5 V 3.9 - 4.0
F 2.5 - 2.6 W 4.0 - 4.1
G 2.6 - 2.7 X 4.1 - 4.2
H 2.7 - 2.8 Y 4.2 - 4.3
J 2.8 - 2.9 Z 4.3 - 4.4
K 2.9 - 3.0 2 4.4- 4.5
L 3.0- 3.1 3 4.5- 4.6

(Ω)

DL

M 3.1 - 3.2 4 4.6 - 4.7
N 3.2 - 3.3 5 4.7 - 4.8
P 3.3 - 3.4 6 4.8 - 4.9
Q 3.4 - 3.5 7 4.9 - 5.0

TYPICALPERFORMANCE

SD2931-10

Capacitancevs Drain-SourceVoltage

10000

1000

Ciss

100

C, CAPACITANCE (pF)

10

0 1020304050

Coss

Crss

VDS, DRAIN-SOURCE VOLTAGE (V)

f =1MHz

Drain Currentvs Gate Voltage

20

15

10

5

ID, DRAIN CURRENT (A)

0

2 2.5 3 3.5 4 4.5 5 5.5 6

VGS, GATE-SOURCE VOLTAGE (V)

Tc=+25°C

Gate-SourceVoltages vs CaseTemperature Maximum ThermalResistance vs Case

Temperature

1.1

1.05

1

0.95

0.9

0.85

VGS, GATE-SOURCE VOLTAGE (NORMALIZED)

0.8

-25 0 25 50 75 100

Tc, CASE TEMPERATURE (°C)

Id =11A

Id =10A

Id =.25A

Id =9A

Id =7A

Id =5A

Id =4A

Id =2A

Id =1A

Id =.1A

0.6

0.56

0.52

RTH(j-c) (°C/W)

0.48

0.44
25 35 45 55 65 75 85

Tc, CASE TEMPERATURE (°C)

Tc=-20°C

Tc=+80°C

DC Safe OperatingArea

100

10

Ids(A)

(1)

1

1 10 100 1000

(1)Currentinthis area may belimited by R

ds(on)

Vds(V)

3/10