SGS Thomson Microelectronics SD2923 Datasheet
HF/VHF/UHF N-CHANNEL MOSFETs
■ GOLDMETALLIZATION
■ EXCELLENTTHERMAL STABILITY
■ COMMONSOURCE CONFIGURATION
■ Pout = 300W MIN. WITH 16 dB GAIN @ 30
MHz
■ THERMALLY ENHANCEDPACKAGING
DESCRIPTION
The SD2923 is a gold metallizedN-Channel MOS
field-effect RF power transistor. It is intended for
use in 50 V DC large signal applications up to
150 MHz
SD2923
RF POWER TRANSISTORS
M177
epoxy sealed
ORDER CODE BRANDING
SD2923 SD2923
PIN CONNECTION
1. Drain 4. Source
2.Source 5. Source
3. Gate
ABSOLUTE MAXIMUM RATINGS (T
Symb o l Para meter Val u e Uni t
V
(BR)DSS
V
V
P
T
Drain S our ce Vo lt age 125 V
Drain-Gate Voltage (RGS=1MΩ)
DGR
Gat e- Source Voltage ±20 V
GS
Drain C urr ent 40 A
I
D
Power Di ss ipation 648 W
DISS
Max. Operating Junction Te mperatur e 200
T
j
Sto rage Temperature -65 to 150
STG
case
=25oC)
125 V
THERMAL DATA
R
th(j-c)
R
th(c-s)
* Determined using a flat aluminum or copperheatsink with thermal compound applied (Dow Corning 340 or equivalent).
November 1999
Junct ion-Case Ther mal Resistance
Case-Heatsink T her mal Resistance ∗
0.27
0.15
o
o
o
C/W
o
C/W
C
C
1/8
SD2923
ELECTRICALSPECIFICATION (T
case
=25oC)
STATIC
Symbol Para met e r Mi n . Typ . Ma x. Unit
V
(BR)DSSVGS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)VGS
g
FS
C
ISS
C
OSS
C
RSS
=0V IDS= 2 00 mA 125 V
VGS=0V VDS=50V 10 mA
VGS=20V VDS=0V 10 µA
VDS=10V ID=250mA 2 5 V
=10V ID=20A 3 V
VDS=10V ID=10A 8 mho
VGS=0V VDS= 5 0 V f = 1 MHz 825 pF
VGS=0V VDS= 5 0 V f = 1 MHz 390 pF
VGS=0V VDS=50V f=1MHz 55 pF
REF. 1019132C
DYNAMIC
Symbol Para met e r Mi n . Typ . Ma x. Unit
P
OUT
G
η
Load
Mismatch
f=30MHz VDD=50V IDQ= 2 50 mA 300 400 W
f=30MHz VDD=50V P
PS
f=30MHz VDD=50V P
D
f=30MHz V
DD
=50V P
=300W IDQ= 2 50 mA 16 22 dB
out
=300W IDQ= 2 50 mA 50 55 %
out
=300W IDQ=250mA
out
5:1 VSW R
All Phase Angles
IMPEDANCEDATA
2/8
FREQ. ZIN(Ω)Z
DL
(Ω)
30 MHz 1.8 - j 0.2 2.8 + j 2.3
108 MHz 1.9 + j 0.2 1.6 + j 1. 4
150 MHz 1.9 + j 0.3 1.5 + j 1. 6
TYPICALPERFORMANCE
SD2923
Capacitancevs Drain-SourceVoltage
Drain Current vs Gate Voltage
Maximum Thermal Resistance vs Case
Temperature
Gate-SourceVoltagesvs Case Temperature
3/8
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