HF/VHF/UHF N-CHANNEL MOSFETs
■ GOLDMETALLIZATION
■ EXCELLENTTHERMAL STABILITY
■ COMMONSOURCE CONFIGURATION
■ Pout = 300W MIN. WITH 16 dB GAIN @ 30
MHz
■ THERMALLY ENHANCEDPACKAGING
DESCRIPTION
The SD2923 is a gold metallizedN-Channel MOS
field-effect RF power transistor. It is intended for
use in 50 V DC large signal applications up to
150 MHz
SD2923
RF POWER TRANSISTORS
M177
epoxy sealed
ORDER CODE BRANDING
SD2923 SD2923
PIN CONNECTION
1. Drain 4. Source
2.Source 5. Source
3. Gate
ABSOLUTE MAXIMUM RATINGS (T
Symb o l Para meter Val u e Uni t
V
(BR)DSS
V
V
P
T
Drain S our ce Vo lt age 125 V
Drain-Gate Voltage (RGS=1MΩ)
DGR
Gat e- Source Voltage ±20 V
GS
Drain C urr ent 40 A
I
D
Power Di ss ipation 648 W
DISS
Max. Operating Junction Te mperatur e 200
T
j
Sto rage Temperature -65 to 150
STG
case
=25oC)
125 V
THERMAL DATA
R
th(j-c)
R
th(c-s)
* Determined using a flat aluminum or copperheatsink with thermal compound applied (Dow Corning 340 or equivalent).
November 1999
Junct ion-Case Ther mal Resistance
Case-Heatsink T her mal Resistance ∗
0.27
0.15
o
o
o
C/W
o
C/W
C
C
1/8
SD2923
ELECTRICALSPECIFICATION (T
case
=25oC)
STATIC
Symbol Para met e r Mi n . Typ . Ma x. Unit
V
(BR)DSSVGS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)VGS
g
FS
C
ISS
C
OSS
C
RSS
=0V IDS= 2 00 mA 125 V
VGS=0V VDS=50V 10 mA
VGS=20V VDS=0V 10 µA
VDS=10V ID=250mA 2 5 V
=10V ID=20A 3 V
VDS=10V ID=10A 8 mho
VGS=0V VDS= 5 0 V f = 1 MHz 825 pF
VGS=0V VDS= 5 0 V f = 1 MHz 390 pF
VGS=0V VDS=50V f=1MHz 55 pF
REF. 1019132C
DYNAMIC
Symbol Para met e r Mi n . Typ . Ma x. Unit
P
OUT
G
η
Load
Mismatch
f=30MHz VDD=50V IDQ= 2 50 mA 300 400 W
f=30MHz VDD=50V P
PS
f=30MHz VDD=50V P
D
f=30MHz V
DD
=50V P
=300W IDQ= 2 50 mA 16 22 dB
out
=300W IDQ= 2 50 mA 50 55 %
out
=300W IDQ=250mA
out
5:1 VSW R
All Phase Angles
IMPEDANCEDATA
2/8
FREQ. ZIN(Ω)Z
DL
(Ω)
30 MHz 1.8 - j 0.2 2.8 + j 2.3
108 MHz 1.9 + j 0.2 1.6 + j 1. 4
150 MHz 1.9 + j 0.3 1.5 + j 1. 6
TYPICALPERFORMANCE
SD2923
Capacitancevs Drain-SourceVoltage
Drain Current vs Gate Voltage
Maximum Thermal Resistance vs Case
Temperature
Gate-SourceVoltagesvs Case Temperature
3/8
SD2923
TYPICALPERFORMANCE
OutputPowervs Input Power OutputPower vsInput Power
OutputPowervs Voltage Supply OutputPower vsGateVoltage
PowerGainvs Output Power Efficiencyvs OutputPower
4/8
30 MHzTest CircuitSchematic
BIAS
+
-
SD2923
+
50V
-
30 MHzTest CircuitComponentPart List
REF.1008706A
5/8
SD2923
30 MHzTest CircuitPhotomaster
SD2923
LOG1101
01/99 Fix# 1
30 MHzProductionTest Fixture
REF.1008706A
+
+
6/8
M177 (.550 DIA. 4/L N/HERM W/FLG) MECHANICAL DATA
SD2923
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.72 5.97 0.225 0.235
B 6.73 6.96 0.265 0.275
C 21.84 22.10 0.860 0.870
D 28.70 28.96 1.130 1.140
E 13.84 14.10 0.545 0.555
F 0.08 0.18 0.003 0.007
G 2.49 2.74 0.098 0.108
H 3.81 4.32 0.150 0.170
I 7.11 0.280
J 27.43 28.45 1.080 1.120
K 15.88 16.13 0.625 0.635
mm inch
Controlling Dimension: Inches
1011012D
7/8
SD2923
Information furnished is believed to beaccurate and reliable. However, STMicroelectronics assumes noresponsibility for theconsequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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8/8
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