SGS Thomson Microelectronics SD2922 Datasheet



HF/VHF/UHF N-CHANNEL MOSFETs

■ GOLDMETALLIZATION

■ EXCELLENTTHERMAL STABILITY

■ COMMONSOURCE CONFIGURATION

■ POUT = 300W MIN. WITH 12.5 dB GAIN

@175MHz

DESCRIPTION

The SD2922 is a gold metallizedN-Channel MOS
field-effect RF power transistor. The SD2922 is
intended for use in 50V dc large signal
applicationsup to 200 MHz

SD2922

RF POWER TRANSISTORS

M244

epoxy sealed

ORDER CODE BRANDING

SD2922 SD2922

PIN CONNECTION

1. Drain 3. Source

2. Gate

ABSOLUTE MAXIMUM RATINGS (T

Symb o l Para meter Val u e Uni t

V

(BR)DSS

V

V

P

T

Drain S our ce Vo lt age 125 V
Drain-Gate Voltage (RGS=1MΩ)

DGR

Gat e- Source Voltage ±20 V

GS

Drain C urr ent 40 A

I

D

Power Di ss ipation 500 W

DISS

Max. Operating Junction Te mperatur e +200

T

j

Sto rage Temperature -65 to 150

STG

case

=25oC)

125 V

THERMAL DATA

R

th(j-c)

R

th(c-s)

∗ Determined using a flat aluminumor copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).

November 1999

Junct ion-Case Ther mal R esista nce 0.35
Case Heatsink Ther mal Resistance ∗

0.12

o
o

o

C/W

o

C/W

C
C

1/13

SD2922

ELECTRICAL SPECIFICATION (T

case

=25oC)

STATIC (per section)

Symbol Para met e r Mi n . Typ . Ma x. Unit

V

(BR)DSSVGS

I

DSS

I

GSS

V

GS(Q)

V

DS(on)VGS

gfs V

C

ISS

C

OSS

C

RSS

=0V IDS= 1 00 mA 125 V
VGS=0V VDS=50V 5 mA
VGS=20V VDS=0V 5 µA
VDS=10V ID=250mA 1 5 V

=10V ID=10A 3 V

=10V ID=5A 4 mho

DS

VGS=0V VDS= 5 0 V f = 1 MHz 411 pF
VGS=0V VDS= 5 0 V f = 1 MHz 198 pF
VGS=0V VDS=50V f=1MHz 27 pF

REF. 1021306E

DYNAMIC

Symbol Para met e r Mi n . Typ . Ma x. Unit

P

OUT

G

η

Load

Mismatch

f = 175 MHz VDD=50V IDQ= 5 00 mA 300 W
f = 175 MHz VDD=50V P

PS

f = 175 MHz VDD=50V P

D

f = 175 MHz V

DD

=50V P

=300W IDQ= 5 00 mA 12.5 15 dB

out

=300W IDQ= 5 00 mA 50 60 %

out

=300W IDQ=500mA

out

5:1 VSWR

All Phase Angles

IMPEDANCEDATA

Measured Gate to Gate and Drain toDrain, respectively.

FREQ. ZIN(Ω) ZDL(Ω)

175 MHz 0 .92 - j 0.14 3.17 + j 4.34

2/13

SD2922

MaximumThermal Resistancevs Case
Temperature

0.42

0.4

0.38

Rth(j-c)(ºC/W)

0.36

0.34
25 45 65 85

Tc,Case Temperature (°C)

Capacitancevs Drain-SourceVoltage

10000

1000

100

C, CAPACITANCE (pF)

10

0 102030405060

VDS, DRAIN-SOURCE VOLTAGE (VOLTS)

GC81240

Ciss

Coss

Crss

GC83360

DC Safe OperatingArea

100

50

30

20

(1)

10

5

Ids, DRAIN CURRENT (A)

3

2

1

1 2 5 10 20 50 100 200 500 1,000

Vds, DRAIN SOURCEVOLTAGE(V)

(1) Currentinthisareamaybelimited by RDS(on)
Twosides,each sectionequallyloaded

GC81900

Drain Current vs Gate Voltage

12

10

VDS = 10V

8

6

4

ID, DRAIN CURRENT (A)

2

0

1234567

Tc= 25°C

Tc= 80°C

Tc= -20°C

VGS GATE-SOURCE VOLTAGE (VOLTS)

GC81250

Gate Voltage vs Case Temperature

1.15

1.1

1.05

1

0.95

0.9

VGS, GATE-SOURCE VOLTAGE(Normalized)

0.85

-25 0 25 50 75 100

Tc, CASE TEMPERATURE (ºC)

Id= 0.25A

Id= 1A

Id = 2A

GC81260

Id= 5A

Id= 4A

Id= 0.1A

3/13

SD2922

TYPICALPERFORMANCE(175 MHz)

OutputPowervs Input Power

400

Vdd = 50V

300

200

100

Pout, OUTPUT POWER (W)

0

135791113

f=175MHz
IDQ = 500 mA

Pin, INPUT POWER (W)

GC81200

Vdd = 40V

OutputPowervs Supply Voltage

GC81220

Pin = 13W

Pin= 10W

Pin = 5W

Pout, OUTPUTPOWER (W)

400

300

200

100

IDQ = 500mA
f = 175MHz

OutputPower vsInput Power

400

300

200

100

Pout, OUTPUT POWER (W)

0

135791113

Pin, INPUT POWER (W)

Tc = -20°C

Tc =25°C

VDD= 50V
f =175MHz
IDQ= 500 mA

Tc=80°C

OutputPower vsGateVoltage

400

Tc= -20°C

VDD= 50 V
IDQ= 50 0mA
f = 175MHz
Pin = Constant

Tc= 80° C

Pout,OUTPUTPOWER (W)

300

Tc= 25° C

200

100

GC81210

GC812 30

0

25 30 35 40 45 50

VDD, SUPPLY VOLTAGE (VOLTS)

4/13

0

-4-3-2-101234

VGSGATE-SOURCEVOLTAGE(VOLTS)