SGS Thomson Microelectronics SD2921-10 Datasheet



HF/VHF/UHF N-CHANNEL MOSFETs

■ GOLDMETALLIZATION

■ EXCELLENTTHERMALSTABILITY

■ COMMONSOURCE CONFIGURATION

■ POUT = 150W MIN. WITH 12.5dB gain @175

MHz

■ THERMALLYENHANCED PACKAGINGFOR

LOWERJUNCTION TEMPERATURES

SD2921-10

RF POWER TRANSISTORS

DESCRIPTION

The SD2921-10 is a gold metallized N-Channel
MOS field-effect RF power transistor. Being
electrically identical to the standard SD2921

ORDER CODE BRANDING

SD2921-10 SD2921-10

M174

epoxy sealed

MOSFET, it is intended for use in 50V dc large
signal applications up to 200 MHz.

The SD2921-10 is mechanical compatible to the
SD2921 but it offers in addition a better thermal
capability (25% lower thermal resistance),

PIN CONNECTION

representing the best-in-class transistor for ISM
applications.

1. Drain 3.Gate

2. Source 4. Source

ABSOLUTE MAXIMUM RATINGS (T

Symb o l Para meter Val u e Uni t

V

(BR)DSS

V

V

P

T

Drain S our ce Vo lt age 125 V
Drain-Gate Voltage (RGS=1MΩ)

DGR

Gat e- Source Voltage ±20 V

GS

Drain C urr ent 20 A

I

D

Power Di ss ipation 389 W

DISS

Max. Operating Junction Te mperatur e 200

T

j

Sto rage T emperatur e -65 to 1 50

STG

case

=25oC)

125 V

o

C

o

C

THERMAL DATA

R

th(j-c)

R

th(c-s)

* Determined using a flat aluminum or copperheatsink with thermal compound applied (Dow Corning340 or equivalent).

November 1999

Junct ion-Case Ther mal R esista nce
Case-Heatsink T her mal Resistance ∗

0.45

0.2

o

C/W

o

C/W

1/10

SD2921-10

ELECTRICAL SPECIFICATION (T

case

=25oC)

STATIC

Symbol Para met e r Mi n . Typ . Ma x. Unit

V

(BR)DSSVGS

I

DSS

I

GSS

V

GS(Q)

V

DS(ON)VGS

G

FS

C

ISS

C

OSS

C

RSS

=0V IDS= 100 mA 125 V
VGS=0V VDS=50V 5 mA
VGS=20V VDS=0V 5 µA
VDS=10V ID= 250 mA 2.0 5.0 V

=10V ID=10A 3.0 V
VDS=10V ID=5A 4 mho
VGS=0V VDS= 50 V f = 1 M Hz 411 pF
VGS=0V VDS= 50 V f = 1 M Hz 198 pF
VGS=0V VDS=50V f=1MHz 27 pF

REF. 1021305M

DYNAMIC

Symbol Para met e r Mi n . Typ . Ma x. Unit

P

OUT

G

η

Load

Mismatch

f = 175 MHz VDD=50V IDQ= 250 mA 150 W
f = 175 MHz VDD=50V P

PS

f = 175 MHz VDD=50V P

D

f = 175 MHz V

DD

=50V P

=150W IDQ= 250 m A 12.5 14 dB

out

=150W IDQ= 250 m A 50 55 %

out

=150W IDQ=250mA

out

10:1 VSWR

All Phase Angles

IMPEDANCEDATA

2/10

FREQ. ZIN(Ω)Z

DL

(Ω)

30 MHz 1.7 - j 5.7 6.8 + j 0.9

175 MHz 1.2 - j 2.0 2. 0 + j 2.4

TYPICALPERFORMANCE

SD2921-10

OutputPowervs Input Power

250

200

150

100

50

Pout, OUTPUT POWER (W)

0

14710131619

Pin, INPUT POWER (W)

Vdd = 50V

OutputPowervs SupplyVoltage

200

150

100

50

Pout, OUTPUT POWER (WATTS)

0

24 28 32 36 40 44 48

VDD, SUPPLY VOLTAGE (VOLTS)

Pin = 9W

Vdd = 40V

Tc = 25°C
f = 175 MHz
IDQ = 250mA

Pin = 6W

Pin = 3W

IDQ = 250mA
f = 175MHz

OutputPower vs Input Power

300

250

200

150

100

50

Pout, OUTPUT POWER (W)

0

1 3 5 7 9 1113151719

Pin, INPUT POWER (W)

OutputPower vs GateVoltage

200

VDD = 50V

150

IDQ = 250mA
f = 175MHz
Pin = Constant

100

50

Pout, OUTPUT POWER (W)

0

-3 -2 -1 0 1 2 3

VGS, GATE-SOURCE VOLTAGE (VOLTS)

T = -20°C

Tcase =-20°C

Tcase = 25°C

Tcase = 80°C

IDQ = 250 mA
VDD = 50V
f = 175MHz

T=80°C

T=25°C

Capacitancevs Drain-SourceVoltage

10000

1000

100

C, CAPACITANCE(pF)

10

0 1020304050

VDS,DRAIN-SOURCEVOLTAGE(VOLTS)

Crss

Ciss

Coss

Drain Current vs Gate Voltage

15

10

5

ID, DRAIN CURRENT (A)

0

2 2.5 3 3.5 4 4.5 5 5.5 6

VGS,GATE-SOURCEVOLTAGE(VOLTS)

T = -20°C

T=25°C

T=80°C

VDS= 10V

3/10