SGS Thomson Microelectronics SD2921 Datasheet
HF/VHF/UHF N-CHANNELMOSFETs
■ GOLDMETALLIZATION
■ EXCELLENTTHERMALSTABILITY
■ COMMONSOURCE CONFIGURATION
■ POUT = 150W MIN. WITH 12.5 dB gain @175
MHz
DESCRIPTION
The SD2921is a gold metallizedN-ChannelMOS
field-effect RF power transistor. The SD2921 is
intended for use in 50V dc large signal
applicationsup to 200 MHz
SD2921
RF POWER TRANSISTORS
M174
epoxy sealed
ORDER CODE BRANDING
SD2921 SD2921
PIN CONNECTION
1. Drain 3.Gate
2. Source 4. Source
ABSOLUTE MAXIMUM RATINGS (T
Symb o l Parameter Val u e Uni t
V
(BR)DSS
V
V
P
T
Drain So urc e Volt age 125 V
Drain-G at e Voltage (RGS=1MΩ) 125 V
DGR
Gat e- Source V olt age ±20 V
GS
Drain Cur re nt 16 A
I
D
Power Diss ipation 292 W
DISS
Max. Oper ating J unct ion T emperatu re 200
T
j
Storage T emperature -65 to 150
STG
case
=25oC)
THERMAL DATA
R
th(j-c)
R
th(c-s)
* Determined using a flat aluminum or copperheatsink with thermal compound applied (Dow Corning340 or equivalent).
November 1999
Junct ion- Ca se Therm al Resist anc e
Case-Heat s i nk Therm al R esis tance ∗
0.6
0.2
o
o
o
C/W
o
C/W
C
C
1/10
SD2921
ELECTRICAL SPECIFICATION (T
case
=25oC)
STATIC
Symb o l Para met er Mi n . Typ . Max. Unit
V
(BR)DSSVGS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)VGS
G
FS
C
ISS
C
OSS
C
RSS
=0V IDS= 100 m A 125 V
VGS=0V VDS=50V 5 mA
VGS= 20V VDS=0V 5 µA
VDS= 10V ID= 250 m A 1.0 5.0 V
= 10V ID=10A 3.0 V
VDS= 10V ID=5A 4 mho
VGS=0V VDS= 50 V f = 1 M H z 411 pF
VGS=0V VDS= 50 V f = 1 M H z 198 pF
VGS=0V VDS=50V f=1MHz 27 pF
DYNAMIC
Symb o l Para met er Mi n . Typ . Max. Unit
P
OUT
G
η
Load
Mismatch
f = 175 M H z VDD=50V IDQ= 250 mA 150 W
f = 175 M H z VDD=50V P
PS
f = 175 M H z VDD=50V P
D
f = 175 M H z V
DD
=50V P
=150W IDQ= 250 m A 12.5 14 dB
out
=150W IDQ= 250 mA 55 65 %
out
=150W IDQ=250mA
out
10:1 VSWR
All Phase Angles
REF. 1021304K
IMPEDANCEDATA
2/10
FREQ. ZIN(Ω)Z
DL
(Ω)
30 M Hz 1. 7 - j 5.7 6.8 + j 0.9
175MHz 1.2-j2.0 2.0+j2.4
TYPICALPERFORMANCE
SD2921
OutputPowervs Input Power
250
200
150
100
50
Pout, OUTPUT POWER (W)
0
14710131619
Pin, INPUT POWER (W)
Vdd = 50V
OutputPowervs SupplyVoltage
200
150
100
50
Pout, OUTPUT POWER (WATTS)
0
24 28 32 36 40 44 48
VDD, SUPPLY VOLTAGE (VOLTS)
Pin = 9W
Vdd =40V
Tc = 25°C
f =175 MHz
IDQ = 250mA
Pin = 6W
Pin = 3W
IDQ = 250mA
f =175MHz
OutputPower vs Input Power
300
250
200
150
100
50
Pout, OUTPUT POWER (W)
0
1 3 5 7 9 1113151719
Pin, INPUT POWER (W)
OutputPower vs GateVoltage
200
VDD = 50V
150
IDQ = 250mA
f = 175MHz
Pin = Constant
100
50
Pout, OUTPUT POWER (W)
0
-3 -2 -1 0 1 2 3
VGS, GATE-SOURCE VOLTAGE (VOLTS)
T = -20°C
Tcase =-20°C
Tcase = 25°C
Tcase = 80°C
IDQ = 250 mA
VDD = 50V
f =175MHz
T=80°C
T=25°C
Capacitancevs Drain-SourceVoltage
10000
1000
100
C, CAPACITANCE(pF)
10
0 1020304050
VDS,DRAIN-SOURCEVOLTAGE(VOLTS)
Crss
Ciss
Coss
Drain Current vs Gate Voltage
15
10
5
ID, DRAIN CURRENT (A)
0
2 2.5 3 3.5 4 4.5 5 5.5 6
VGS,GATE-SOURCEVOLTAGE(VOLTS )
T = -20°C
T=25°C
T=80°C
VDS= 10V
3/10
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