SGS Thomson Microelectronics SD2918 Datasheet



HF/VHF/UHF N-CHANNEL MOSFETs

■ GOLDMETALLIZATION

■ EXCELLENTTHERMALSTABILITY

■ COMMONSOURCE CONFIGURATION

■ P

DESCRIPTION

The SD2918is a gold metallizedN-ChannelMOS
field-effect RF power transistor. It is intended for
use in 50 V DC large signal applications up to
200 MHz

= 30 W MIN. WITH 18 dB GAIN@ 30

out

MHz

SD2918

RF POWER TRANSISTORS

ADVANCE DATA

M113

epoxy sealed

ORDER CODE BRANDING

SD2918 TSD2918

PIN CONNECTION

1. Drain 3.Gate

2. Source 4. Source

ABSOLUTE MAXIMUM RATINGS (T

Symb o l Para meter Val u e Uni t

V

(BR)DSS

V

V

P

T

Drain S our ce Vo lt age 125 V
Drain-Gate Voltage (RGS=1MΩ)

DGR

Gat e- Source Voltage ±20 V

GS

Drain C urr ent 6 A

I

D

Power Di ss ipation 175 W

DISS

Max. Operating Junction Te mperatur e 200

T

j

Sto rage T empe r ature -65 to 1 50

STG

case

=25oC)

125 V

THERMAL DATA

R

th(j-c)

R

th(c-s)

* Determined using a flat aluminum or copperheatsink with thermal compound applied (Dow Corning 340 or equivalent).

November 1999

Junct ion-Case Ther mal R esista nce
Case-Heatsink T her mal Resistance ∗

1.0

0.30

o
o

o

C/W

o

C/W

C
C

1/8

SD2918

ELECTRICAL SPECIFICATION (T

case

=25oC)

STATIC

Symbol Para met e r Mi n . Typ . Ma x. Unit

V

(BR)DSSVGS

I

DSS

I

GSS

V

GS(Q)

V

DS(ON)VGS

g

FS

C

ISS

C

OSS

C

RSS

=0V IDS= 10 mA 125 V
VGS=0V VDS=50V 1.0 mA
VGS=20V VDS=0V 1 µA
VDS=10V ID=10mA 1.0 5.0 V

=10V ID= 2.5 A 5.0 V
VDS=10V ID=2.5A 0.8 mho
VGS=0V VDS=50V f=1MHz 58 pF
VGS=0V VDS=50V f=1MHz 35.5 pF
VGS=0V VDS=50V f=1MHz 7.5 pF

REF. 1022497C

DYNAMIC

Symbol Para met e r Mi n . Typ . Ma x. Unit

P

OUT

G

η

Load

Mismatch

f = 30M Hz VDD=50V Pin=0.475W IDQ=100mA 30 W
f = 30M Hz VDD=50V P

PS

f = 30M Hz VDD=50V P

D

f = 30M Hz V

=50V P

DD

=30W IDQ= 100 mA 18 22 dB

out

=30W IDQ= 100 mA 50 55 %

out

=30W IDQ=100mA

out

30:1 VSWR

All Angles

IMPEDANCEDATA

2/8

FREQ. ZIN(Ω)Z

DL

(Ω)

30 MHz 24.4 - j 13. 4 28.8 + j 7.2

TYPICALPERFORMANCE

SD2918

Capacitancevs Drain-SourceVoltage

Drain Current vs Gate Voltage

Maximum ThermalResistancevs Case
Temperature

Gate-SourceVoltagesvs Case Temperature

3/8