SGS Thomson Microelectronics SD2904 Datasheet
HF/VHF/UHF N-CHANNELMOSFETs
■ GOLDMETALLIZATION
■ COMMONSOURCE CONFIGURATION
■ 2 - 500 MHz
■ 30 WATTS
■ 28 VOLTS
■ 9.5 dB MIN. AT 400 MHz
■ CLASSA OR AB OPERATION
■ EXCELLENTTHERMALSTABILITY
DESCRIPTION
The SD2904is a gold metallizedN-ChannelMOS
field-effect RF power transistor. It is intended for
use in 28 V DC large signal applications up to
500 MHz
SD2904
RF POWER TRANSISTORS
M113
epoxy sealed
ORDER CODE BRANDING
SD2904 SD2904
PIN CONNECTION
1. Drain 3.Gate
2. Source 4. Source
ABSOLUTE MAXIMUM RATINGS (T
Symb o l Parameter Val u e Uni t
V
(BR)DSS
V
V
P
T
Drain Source Voltage 65 V
Drain-G at e Voltage (RGS=1MΩ)
DGR
Gat e- Source Voltag e ±20 V
GS
Drain Cur re nt 5 A
I
D
Power Diss ipation 100 W
DISS
Max. Oper ating Juncti on Temperatu re 200
T
j
Storage Temperature -65 to 1 50
STG
case
=25oC)
65 V
THERMAL DATA
R
th(j-c)
R
th(c-s)
* Determined using a flat aluminum or copperheatsink with thermal compound applied (Dow Corning 340 or equivalent).
November 1999
Junct ion- Ca se Therm al Resist anc e
Case-Heat s i nk Therm al R esis tance ∗
1.75
0.30
o
o
o
C/W
o
C/W
C
C
1/8
SD2904
ELECTRICAL SPECIFICATION (T
case
=25oC)
STATIC
Symb o l Para met er Mi n . Typ . Max. Unit
V
(BR)DSSVGS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)VGS
g
FS
C
ISS
C
OSS
C
RSS
=0V IDS=30mA 65 V
VGS=0V VDS=28V 3 mA
VGS= 20V VDS=0V 2 µA
VDS= 10V ID=60mA 1.0 6.0 V
= 10V ID=3A 1.6 V
VDS= 10V ID=3A 1.2 mho
VGS=0V VDS=28V f=1MHz 47 pF
VGS=0V VDS=28V f=1MHz 35 pF
VGS=0V VDS=28V f=1MHz 7 pF
REF. 1021310H
DYNAMIC
Symb o l Para met er Mi n . Typ . Max. Unit
P
OUT
G
η
Load
Mismatch
f = 400 M H z VDD=28V IDQ=50mA 30 W
f = 400 M H z VDD=28V P
PS
f = 400 M H z VDD=28V P
D
f = 400 M H z V
DD
=28V P
=30W IDQ= 5 0 m A 9.5 11.5 dB
out
=30W IDQ=50mA 45 55 %
out
=30W IDQ=50mA
out
10:1 VSWR
All Angles
IMPEDANCEDATA
2/8
FREQ. ZIN(Ω)Z
DL
(Ω)
400MHz 2.0-j2.4 5.6+j0.4
TYPICALPERFORMANCE
SD2904
Capacitancevs Drain-SourceVoltage
1000
100
10
C, CAPACITANCES(pF)
1
0102030
VDS. DRAIN-SOURCEVOLTAGE(VOLTS)
Crss
GC82 480
f = 1 MHz
Ciss
Coss
Drain Current vs Gate Voltage
5
4
3
2
ID,DRAINCURRENT(A)
1
0
5678910
VGS, GATE-SOURCEVOLTAGE (VOLTS)
GC82500
T = -20°C
T= 25°C
T=80°C
VDS = 10V
MaximumThermalResistancevs Case
Temperature
2.1
1.9
RTH(j-c) (ºC/W)
1.7
25 40 55 70 85
Tc, CASE TEMPERATURE (ºC)
GC82 490
Gate-SourceVoltages vs CaseTemperature
1.03
ID= 750mA
ID=500mA
0.99
ID= 200mA
VDD= 10V
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
0.95
-25 0 25 50 75 100
Tc,CASE TEMPERATURE (ºC)
ID=25 mA
GC82510
ID=1 A
ID= 1.25A
3/8
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