SGS Thomson Microelectronics SD2903 Datasheet
HF/VHF/UHF N-CHANNEL MOSFETs
■ GOLDMETALLIZATION
■ 2 - 500 MHz
■ 30 WATTS
■ 28 VOLTS
■ 13 dB MIN. AT 400 MHz
■ CLASSA OR AB OPERATION
■ EXCELLENTTHERMALSTABILITY
■ COMMONSOURCE CONFIGURATION,
PUSH-PULL
DESCRIPTION
The SD2903 is a gold metallizedN-Channel MOS
field-effect RF power transistor. It is intended for
use in 28 V DC large signal applications up to
500 MHz
SD2903
RF POWER TRANSISTORS
M229
(epoxysealed)
ORDER CODE BRANDING
SD2903 SD2903
PIN CONNECTION
1. Drain 4.Gate
2. Drain 5.Gate
3. Source
ABSOLUTE MAXIMUM RATINGS (T
Symb o l Para meter Val u e Uni t
V
(BR)DSS
V
V
P
T
Drain Source Voltage 65 V
Drain-Gate Voltage (RGS = 1 MΩ)
DGR
Gat e- Source Voltage ±20 V
GS
Drain C urr ent 5 A
I
D
Power Di ss ipation 100 W
DISS
Max. Operating Junction Te mperatur e 200
T
j
Sto rage Temperature -65 to 150
STG
case
=25oC)
65 V
THERMAL DATA
R
th(j-c)
R
th(c-s)
* Determined using a flat aluminum or copperheatsink with thermal compound applied (Dow Corning 340 or equivalent).
November 1999
Junct ion-Case Ther mal R esista nce
Case-Heatsink T her mal Resistance ∗
1.75
0.40
o
o
o
C/W
o
C/W
C
C
1/8
SD2903
ELECTRICAL SPECIFICATION (T
case
=25oC)
STATIC (Per Section)
Symbol Para met e r Mi n . Typ . Ma x. Unit
V
(BR)DSSVGS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)VGS
g
FS
C
ISS
C
OSS
C
RSS
=0V IDS=15mA 65 V
VGS=0V VDS=28V 1.5 mA
VGS=20V VDS=0V 1.0 µA
VDS=10V ID=30mA 1.0 6.0 V
=10V ID= 1.5 A 1.6 V
VDS=10V ID=1.5A 0.6 mho
VGS=0V VDS=28V f=1MHz 23 pF
VGS=0V VDS=28V f=1MHz 18 pF
VGS=0V VDS=28V f=1MHz 3.5 pF
REF. 1021309H
DYNAMIC (TotalDevice)
Symbol Para met e r Mi n . Typ . Ma x. Unit
P
OUT
G
η
Load
Mismatch
f = 400 MHz VDD=28V IDQ= 1 00 mA 30 W
f = 400 MHz VDD=28V P
PS
f = 400 MHz VDD=28V P
D
f = 400 MHz V
DD
=28V P
=30W IDQ= 1 00 mA 13 1 5 dB
out
=30W IDQ= 1 00 mA 45 5 0 %
out
=30W IDQ=100mA
out
5:1 VSWR
All Ang les
IMPEDANCEDATA
Measured Gate to Gate and Drain toDrain, Respectively.
2/8
FREQ. ZIN(Ω)Z
DL
(Ω)
400 MHz 4.6 - j 12 13.6 + j 10
TYPICALPERFORMANCE
SD2903
Capacitancevs Drain-SourceVoltage
100
f=1MHz
10
C, CAPACITANCES(pF)
1
0102030
Crss
VDS,DRAIN-SOURCE VOLTAGE(VOLTS)
GC83770
Ciss
Coss
Drain Current vs Gate Voltage
5
4
3
2
1
ID, DRAINCURRENT(A)
0
5678910
VDS= 10V
T=25°C
VGS, GATE-SOURCE VOLTAGE (VOLTS)
GC83790
T = -20°C
T=80°C
Maximum ThermalResistancevs Case
Temperature
2.1
1.9
RTH(j-c)(ºC/W)
1.7
25 45 65 8 5
Tc, CASETEMPERATURE (ºC)
Gate-SourceVoltagesvs Case Temperature
1.05
1
0.95
0.9
-25 0 25 50 75 100
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
VDD= 10V
Tc, CASE TEMPERATURE (ºC)
ID = 3A
ID = 1.25 A
ID = 500mA
ID = 25mA
GC83780
GC83800
ID = 2 A
3/8
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