Datasheet SD2903 Datasheet (SGS Thomson Microelectronics)



HF/VHF/UHF N-CHANNEL MOSFETs

■ GOLDMETALLIZATION

■ 2 - 500 MHz

■ 30 WATTS

■ 28 VOLTS

■ 13 dB MIN. AT 400 MHz

■ CLASSA OR AB OPERATION

■ EXCELLENTTHERMALSTABILITY

■ COMMONSOURCE CONFIGURATION,

PUSH-PULL

DESCRIPTION

The SD2903 is a gold metallizedN-Channel MOS
field-effect RF power transistor. It is intended for
use in 28 V DC large signal applications up to
500 MHz

SD2903

RF POWER TRANSISTORS

M229

(epoxysealed)

ORDER CODE BRANDING

SD2903 SD2903

PIN CONNECTION

1. Drain 4.Gate

2. Drain 5.Gate

3. Source

ABSOLUTE MAXIMUM RATINGS (T

Symb o l Para meter Val u e Uni t

V

(BR)DSS

V

V

P

T

Drain Source Voltage 65 V
Drain-Gate Voltage (RGS = 1 MΩ)

DGR

Gat e- Source Voltage ±20 V

GS

Drain C urr ent 5 A

I

D

Power Di ss ipation 100 W

DISS

Max. Operating Junction Te mperatur e 200

T

j

Sto rage Temperature -65 to 150

STG

case

=25oC)

65 V

THERMAL DATA

R

th(j-c)

R

th(c-s)

* Determined using a flat aluminum or copperheatsink with thermal compound applied (Dow Corning 340 or equivalent).

November 1999

Junct ion-Case Ther mal R esista nce
Case-Heatsink T her mal Resistance ∗

1.75

0.40

o
o

o

C/W

o

C/W

C
C

1/8

SD2903

ELECTRICAL SPECIFICATION (T

case

=25oC)

STATIC (Per Section)

Symbol Para met e r Mi n . Typ . Ma x. Unit

V

(BR)DSSVGS

I

DSS

I

GSS

V

GS(Q)

V

DS(ON)VGS

g

FS

C

ISS

C

OSS

C

RSS

=0V IDS=15mA 65 V
VGS=0V VDS=28V 1.5 mA
VGS=20V VDS=0V 1.0 µA
VDS=10V ID=30mA 1.0 6.0 V

=10V ID= 1.5 A 1.6 V
VDS=10V ID=1.5A 0.6 mho
VGS=0V VDS=28V f=1MHz 23 pF
VGS=0V VDS=28V f=1MHz 18 pF
VGS=0V VDS=28V f=1MHz 3.5 pF

REF. 1021309H

DYNAMIC (TotalDevice)

Symbol Para met e r Mi n . Typ . Ma x. Unit

P

OUT

G

η

Load

Mismatch

f = 400 MHz VDD=28V IDQ= 1 00 mA 30 W
f = 400 MHz VDD=28V P

PS

f = 400 MHz VDD=28V P

D

f = 400 MHz V

DD

=28V P

=30W IDQ= 1 00 mA 13 1 5 dB

out

=30W IDQ= 1 00 mA 45 5 0 %

out

=30W IDQ=100mA

out

5:1 VSWR

All Ang les

IMPEDANCEDATA

Measured Gate to Gate and Drain toDrain, Respectively.

2/8

FREQ. ZIN(Ω)Z

DL

(Ω)

400 MHz 4.6 - j 12 13.6 + j 10

TYPICALPERFORMANCE

SD2903

Capacitancevs Drain-SourceVoltage

100

f=1MHz

10

C, CAPACITANCES(pF)

1

0102030

Crss

VDS,DRAIN-SOURCE VOLTAGE(VOLTS)

GC83770

Ciss

Coss

Drain Current vs Gate Voltage

5

4

3

2

1

ID, DRAINCURRENT(A)

0

5678910

VDS= 10V

T=25°C

VGS, GATE-SOURCE VOLTAGE (VOLTS)

GC83790

T = -20°C

T=80°C

Maximum ThermalResistancevs Case
Temperature

2.1

1.9

RTH(j-c)(ºC/W)

1.7
25 45 65 8 5

Tc, CASETEMPERATURE (ºC)

Gate-SourceVoltagesvs Case Temperature

1.05

1

0.95

0.9

-25 0 25 50 75 100

VGS, GATE-SOURCE VOLTAGE (NORMALIZED)

VDD= 10V

Tc, CASE TEMPERATURE (ºC)

ID = 3A

ID = 1.25 A

ID = 500mA

ID = 25mA

GC83780

GC83800

ID = 2 A

3/8

SD2903

TYPICALPERFORMANCE

OutputPowervs Input Power

40

Vdd =28 V

30

20

10

Pout, OUTPUTPOWER (W)

0

0.05 0.45 0.85 1.25

Tc=25°C
f =400 MHz
IDQ = 100 mA

Pin, INPUTPOWER (W)

Vdd =13.5 V

GC83810

OutputPower vsInput Power

50

40

30

T=80°C

20

10

Pout, OUTPUT POWER (W)

0

0.05 0.45 0.85 1.25

Pin, INPUT POWER (W)

OutputPowervs Voltage Supply OutputPower vsGateVoltage

40

30

IDQ = 100 mA
f = 400 MHz

20

Pin = .6 W

GC83830

Pin =1.2 W

40

30

20

T = -20°CT=25°C

IDQ = 100 mA
VDD=28 V
f = 400 MHz

T=-20ºC

T=25ºC

T=80ºC

GC83820

GC83840

10

Pout, OUTPUT POWER (WATTS)

0

13 18 23 28

Pin= .3 W

VDD, SUPPLY VOLTAGE (VOLTS)

PowerGainvs Output Power

20

18

16

Tc = 25°C

PG, POWERGAIN (dB)

f = 400 MHz
IDQ = 100 mA

14

0 10203040

Pout, OUTPUTPOWER(W)

GC83850

10

Pout, OUTPUT POWER (WATTS)

0

34567

VDD =28V
IDQ = 100mA
f = 400MHz
Pin = Constant

VGS, GATE-SOURCE VOLTAGE(VOLTS)

Efficiencyvs OutputPower

60

50

40

30

EFFICIENCY(%)

20

10

0 10203040

Pout,OUTPUTPOWER (W)

GC83860

Tc=25°C
f =400 MHz
IDQ = 100 mA

4/8

400 MHz Test Circuit Schematic

SD2903

400 MHz Test CircuitComponentPart List

5/8

SD2903

400 MHz Test Circuit Photomaster

ProductionTest Fixture

REF. 1022349A

6/8

SD2903

M229 (.230 x .360 WIDE 4L BAL N/HERM W/FLG) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.45 4.70 0.175 0.185
B 1.40 1.65 0.055 0.065
C 11.94 12.95 0.470 0.510
D 5.72 6.10 0.225 0.240
E 2.92 0.115

F 18.29 18.54 0.720 0.730
G 24.64 24.89 0.970 0.980
H 9.02 9.27 0.355 0.365

I 0.10 0.15 0.004 0.006

J 3.18 3.43 0.125 0.135
K 4.06 4.32 0.160 0.170
L 5.84 6.60 0.230 0.260

mm inch

Controlling dimension: Inches

1008194C

7/8

SD2903

Information furnished is believed to beaccurate and reliable. However, STMicroelectronics assumes noresponsibility for theconsequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise underany patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a trademark of STMicroelectronics

1999 STMicroelectronics – Printed in Italy – All Rights Reserved

STMicroelectronicsGROUP OF COMPANIES

Australia - Brazil - China - Finland - France - Germany- Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -

Singapore- Spain - Sweden - Switzerland -United Kingdom - U.S.A.

http://www.st.com

.

8/8