SGS Thomson Microelectronics SD2902 Datasheet
HF/VHF/UHF N-CHANNEL MOSFETs
■ GOLDMETALLIZATION
■ COMMONSOURCE CONFIGURATION
■ 2 - 500 MHz
■ 15 WATTS
■ 28 VOLTS
■ 12.5 dB MIN. AT400 MHz
■ CLASSA OR AB OPERATION
■ EXCELLENTTHERMALSTABILITY
DESCRIPTION
The SD2902is a gold metallizedN-ChannelMOS
field-effect RF power transistor. It is intended for
use in 28 V DC large signal applications up to
500 MHz
SD2902
RF POWER TRANSISTORS
M113
epoxy sealed
ORDER CODE BRANDING
SD2902 SD2902
PIN CONNECTION
1. Drain 3.Gate
2. Source 4. Source
ABSOLUTE MAXIMUM RATINGS (T
Symb o l Parameter Val u e Uni t
V
(BR)DSS
V
V
P
T
Drain Source Voltage 65 V
Drain-G at e Voltage (RGS=1MΩ)
DGR
Gat e- Source Voltag e ±20 V
GS
Drain Cur re nt 2.5 A
I
D
Power Diss ipation 58.3 W
DISS
Max. Oper ating Juncti on Temperatu re 200
T
j
Storage Temperature -65 to 1 50
STG
case
=25oC)
65 V
THERMAL DATA
R
th(j-c)
R
th(c-s)
* Determined using a flat aluminum or copperheatsink with thermal compound applied (Dow Corning 340 or equivalent).
November 1999
Junct ion- Ca se Therm al Resist anc e
Case-Heat s i nk Therm al R esis tance ∗
3.0
0.30
o
o
o
C/W
o
C/W
C
C
1/8
SD2902
ELECTRICAL SPECIFICATION (T
case
=25oC)
STATIC
Symb o l Para met er Mi n . Typ . Max. Unit
V
(BR)DSSVGS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)VGS
g
FS
C
ISS
C
OSS
C
RSS
=0V IDS=15mA 65 V
VGS=0V VDS=28V 1.5 mA
VGS= 20V VDS=0V 1.0 µA
VDS= 10V ID=30mA 1.0 6.0 V
= 10V ID=1.5A 1.6 V
VDS= 10V ID=1.5A 0.6 mho
VGS=0V VDS=28V f=1MHz 23 pF
VGS=0V VDS=28V f=1MHz 18 pF
VGS=0V VDS=28V f=1MHz 3.5 pF
REF. 1021308K
DYNAMIC
Symb o l Para met er Mi n . Typ . Max. Unit
P
OUT
G
η
Load
Mismatch
f = 400 M H z VDD=28V IDQ=25mA 15 W
f = 400 M H z VDD=28V P
PS
f = 400 M H z VDD=28V P
D
f = 400 M H z V
DD
=28V P
=15W IDQ= 2 5 m A 12.5 13. 5 dB
out
=15W IDQ=25mA 45 55 %
out
=15W IDQ=25mA
out
10:1 VSWR
All Angles
IMPEDANCEDATA
2/8
FREQ. ZIN(Ω)Z
DL
(Ω)
400MHz 2.6-j6.5 7.8+j10
TYPICALPERFORMANCE
SD2902
Capacitancevs Drain-SourceVoltage
100
f = 1 MHz
10
C, CAPACITANCES(pF)
1
0102030
VDS. DRAIN-SOURCEVOLTAGE (VOLTS)
GC82930
Ciss
Coss
Crss
Drain Current vs Gate Voltage
5
4
3
2
1
ID, DRAIN CURRENT (A)
0
VDS = 10V
5678910
VGS, GATE-SOURCE VOLTAGE (VOLTS)
T=25°C
GC82950
T=-20°C
T=80°C
MaximumThermalResistancevs Case
Temperature
3.6
3.2
RTH(j-c)(ºC/W)
2.8
25 45 65 85
Tc, CASETEMPERATURE (ºC)
GC8294 0
Gate-SourceVoltages vs CaseTemperature
1.05
1
0.95
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
0.9
-25 0 25 50 75 100
VDD =10V
Tc, CASETEMPERATURE(ºC)
ID =3 A
ID = 25 mA
ID =2 A
ID =1.25 A
ID =500 mA
GC82960
3/8
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