HF/VHF/UHF N-CHANNEL MOSFETs
■ GOLDMETALLIZATION
■ COMMONSOURCE CONFIGURATION
■ 2 - 500 MHz
■ 15 WATTS
■ 28 VOLTS
■ 12.5 dB MIN. AT400 MHz
■ CLASSA OR AB OPERATION
■ EXCELLENTTHERMALSTABILITY
DESCRIPTION
The SD2902is a gold metallizedN-ChannelMOS
field-effect RF power transistor. It is intended for
use in 28 V DC large signal applications up to
500 MHz
SD2902
RF POWER TRANSISTORS
M113
epoxy sealed
ORDER CODE BRANDING
SD2902 SD2902
PIN CONNECTION
1. Drain 3.Gate
2. Source 4. Source
ABSOLUTE MAXIMUM RATINGS (T
Symb o l Parameter Val u e Uni t
V
(BR)DSS
V
V
P
T
Drain Source Voltage 65 V
Drain-G at e Voltage (RGS=1MΩ)
DGR
Gat e- Source Voltag e ± 20 V
GS
Drain Cur re nt 2.5 A
I
D
Power Diss ipation 58.3 W
DISS
Max. Oper ating Juncti on Temperatu re 200
T
j
Storage Temperature -65 to 1 50
STG
case
=25oC)
65 V
THERMAL DATA
R
th(j-c)
R
th(c-s)
* Determined using a flat aluminum or copperheatsink with thermal compound applied (Dow Corning 340 or equivalent).
November 1999
Junct ion- Ca se Therm al Resist anc e
Case-Heat s i nk Therm al R esis tance ∗
3.0
0.30
o
o
o
C/W
o
C/W
C
C
1/8
SD2902
ELECTRICAL SPECIFICATION (T
case
=25oC)
STATIC
Symb o l Para met er Mi n . Typ . Max. Unit
V
(BR)DSSVGS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)VGS
g
FS
C
ISS
C
OSS
C
RSS
=0V IDS=15mA 65 V
VGS=0V VDS=28V 1.5 mA
VGS= 20V VDS=0V 1.0 µA
VDS= 10V ID=30mA 1.0 6.0 V
= 10V ID=1.5A 1.6 V
VDS= 10V ID=1.5A 0.6 mho
VGS=0V VDS=28V f=1MHz 23 pF
VGS=0V VDS=28V f=1MHz 18 pF
VGS=0V VDS=28V f=1MHz 3.5 pF
REF. 1021308K
DYNAMIC
Symb o l Para met er Mi n . Typ . Max. Unit
P
OUT
G
η
Load
Mismatch
f = 400 M H z VDD=28V IDQ=25mA 15 W
f = 400 M H z VDD=28V P
PS
f = 400 M H z VDD=28V P
D
f = 400 M H z V
DD
=28V P
=15W IDQ= 2 5 m A 12.5 13. 5 dB
out
=15W IDQ=25mA 45 55 %
out
=15W IDQ=25mA
out
10:1 VSWR
All Angles
IMPEDANCEDATA
2/8
FREQ. ZIN(Ω )Z
DL
(Ω )
400MHz 2.6-j6.5 7.8+j10
TYPICALPERFORMANCE
SD2902
Capacitancevs Drain-SourceVoltage
100
f = 1 MHz
10
C, CAPACITANCES(pF)
1
01 02 03 0
VDS. DRAIN-SOURCEVOLTAGE (VOLTS)
GC82930
Ciss
Coss
Crss
Drain Current vs Gate Voltage
5
4
3
2
1
ID, DRAIN CURRENT (A)
0
VDS = 10V
567891 0
VGS, GATE-SOURCE VOLTAGE (VOLTS)
T=25°C
GC82950
T=-20°C
T=80°C
MaximumThermalResistancevs Case
Temperature
3.6
3.2
RTH(j-c)(ºC/W)
2.8
25 45 65 85
Tc, CASETEMPERATURE (ºC)
GC8294 0
Gate-SourceVoltages vs CaseTemperature
1.05
1
0.95
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
0.9
-25 0 25 50 75 100
VDD =10V
Tc, CASETEMPERATURE(ºC)
ID =3 A
ID = 25 mA
ID =2 A
ID =1.25 A
ID =500 mA
GC82960
3/8
SD2902
TYPICALPERFORMANCE
OutputPowervs Input Power
25
20
Tc= 25° C
f = 400 MHz
IDQ = 25 mA
15
10
5
Pout, OUTPUTPOWER (W)
0
0.1 0.4 0.7 1 1.3 1.6
Pin, INPUTPOWER (W)
Vdd = 28 V
Vdd = 13.5 V
GC82970
OutputPower vs Input Power
30
25
IDQ = 25 mA
20
VDD = 28 V
f =400 MHz
15
10
5
Pout, OUTPUT POWER (W)
0
0.1 0.4 0.7 1 1.3 1.6
Pin, INPUTPOWER (W)
OutputPowervs Voltage Supply OutputPower vs Gate Voltage
25
GC82990
Pin = 1.6 W
20
IDQ = 25 m A
f = 400 MHz
15
10
Pin = .8 W
Pin =.4 W
5
Pout, OUTPUT POWER (WATTS)
0
13 16 18 21 23 26 28
VDD,SUPPLYVOLTAGE (VOLTS)
20
15
10
5
VDD = 28 V
IDQ = 25 mA
f = 400 MHz
Pin = Constant
T=25°C
Pout, OUTPUT POWER (W)
0
- 101234567
VGS, GATE-SOURCE VOLTAGE (VOLTS)
T = 25ºC
GC83000
T = -20ºC
T = 80ºC
GC82980
T = -20° C
T=80°C
PowerGainvs Output Power
15
14
13
Tc=25° C
f = 400 MHz
IDQ = 25 m A
12
PG, POWER GAIN (dB)
11
0 5 10 15 20 25
4/8
Pout, OUTPUT POWER (W)
GC83010
Efficiencyvs OutputPower
70
60
50
40
EFFICIENCY(%)
30
20
0 5 10 15 20 25
Pout, OUTPUT POWER (W)
Tc= 25° C
f = 400 MHz
IDQ = 25 mA
GC83020
400 MHz Test Circuit Schematic
SD2902
400 MHz Test Circuit Component Part List
5/8
SD2902
400 MHz Test Circuit Photomaster
ProductionTest Fixture
REF. 1022146B
6/8
M113 (.380 DIA 4/L N/HERM W/FLG) MECHANICAL DATA
SD2902
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.59 5.84 0.220 0.230
B 19.81 20.83 0.780 0.820
C 18.29 18.54 0.720 0.730
D 24.64 24.89 0.970 0.980
E 9.40 9.78 0.370 0.385
F 0.10 0.15 0.004 0.006
G 2.16 2.67 0.085 0.105
H 4.06 4.57 0.160 0.180
I 7.14 0.281
J 6.22 6.48 0.245 0.255
K 3.05 3.30 0.120 0.130
mm inch
ControllingDimension:Inches
1010936D
7/8
SD2902
Information furnished is believed to beaccurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise underany patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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