SGS Thomson Microelectronics SD2900 Datasheet
HF/VHF/UHF N-CHANNEL MOSFETs
■ GOLDMETALLIZATION
■ COMMONSOURCE CONFIGURATION
■ 2 - 500 MHz
■ 5 WATTS
■ 28 VOLTS
■ 13.5 dB MIN. AT400 MHz
■ CLASSA OR AB OPERATION
■ EXCELLENTTHERMALSTABILITY
DESCRIPTION
The SD2900is a gold metallizedN-ChannelMOS
field-effect RF power transistor. It is intended for
use in 28 V DC large signal applications up to
500 MHz
SD2900
RF POWER TRANSISTORS
M113
epoxy sealed
ORDER CODE BRANDING
SD2900 SD2900
PIN CONNECTION
1. Drain 3.Gate
2. Source 4. Source
ABSOLUTE MAXIMUM RATINGS (T
Symb o l Parameter Val u e Uni t
V
(BR)DSS
V
V
P
T
Drain Source Voltage 65 V
Drain-G at e Voltage (RGS=1MΩ)
DGR
Gat e- Source Voltag e ±20 V
GS
Drain Cur re nt 900 mA
I
D
Power Diss ipation 21.9 W
DISS
Max. Oper ating Juncti on Temperatu re 200
T
j
Storage Temperature -65 to 1 50
STG
case
=25oC)
65 V
THERMAL DATA
R
th(j-c)
R
th(c-s)
* Determined using a flat aluminum or copperheatsink with thermal compound applied (Dow Corning 340 or equivalent).
November 1999
Junct ion- Ca se Therm al Resist anc e
Case-Heat s i nk Therm al R esis tance ∗
8.0
0.30
o
o
o
C/W
o
C/W
C
C
1/8
SD2900
ELECTRICAL SPECIFICATION (T
case
=25oC)
STATIC
Symb o l Para met er Mi n . Typ . Max. Unit
V
(BR)DSSVGS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)VGS
g
FS
C
ISS
C
OSS
C
RSS
=0V IDS=5mA 65 V
VGS=0V VDS=28V 0.5 mA
VGS= 20V VDS=0V 1.0 µA
VDS= 10V ID=10mA 1.0 6.0 V
= 10V ID=0.5A 1.6 V
VDS= 10V ID=0.5A 0.2 mho
VGS=0V VDS=28V f=1MHz 8.5 pF
VGS=0V VDS=28V f=1MHz 7.8 pF
VGS=0V VDS=28V f=1MHz 1.4 pF
REF. 1021307I
DYNAMIC
Symb o l Para met er Mi n . Typ . Max. Unit
P
OUT
G
η
Load
Mismatch
f = 400 M H z VDD=28V IDQ=50mA 5 W
f = 400 M H z VDD=28V P
PS
f = 400 M H z VDD=28V P
D
f = 400 M H z V
DD
=28V P
=5W IDQ= 5 0 mA 13.5 16 dB
out
=5W IDQ=50mA 45 50 %
out
=5W IDQ=50mA
out
30:1 VSWR
All Angles
IMPEDANCEDATA
2/8
FREQ. ZIN(Ω)Z
DL
(Ω)
400 MHz 8.6 - j 2 4.6 22.6 + j 27.0
TYPICALPERFORMANCE
SD2900
Capacitancevs Drain-SourceVoltage
100
f = 1 MHz
10
C, CAPACITANCES (pF)
1
0102030
VDS.DRAIN-SOURCE VOLTAGE(VOLTS)
GC83130
Ciss
Coss
Crss
Drain Current vs Gate Voltage
1000
800
VDS= 10V
0
5678910
VGS, GATE-SOURCE VOLTAGE (VOLTS)
ID, DRAINCURRENT (mA)
600
400
200
T= 25°C
GC8315 0
T= -20°C
T= 80°C
MaximumThermalResistancevs Case
Temperature
10
9.5
9
8.5
RTH(j-c)(ºC/W)
8
7.5
25 45 65 85
Tc, CASETEMPERATURE (ºC)
GC8314 0
Gate-SourceVoltages vs CaseTemperature
1.04
1.02
1
0.98
0.96
VDD=10V
VGS,GATE-SOURCE VOLTAGE(NORMALIZED)
0.94
-25 0 25 50 75 100
Tc, CASE TEMPERATURE (ºC)
ID= 100m A
GC83160
ID = 7 50 mA
ID = 5 00 mA
ID= 200m A
ID = 5 0 mA
3/8
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