SGS Thomson Microelectronics SD1899 Datasheet
SATELLITE COMM UNIC ATIONS APPLICATI ONS
REFRACTORY/GOLD METALLIZATION
.
EFFICIENCY - 50% TYPICAL
.
.
P
OUT =
30 W MIN. WITH 9.3 dB GAIN
SD1899
RF & MICR OWAVE TRANSIST ORS
.250x.3202LFL(M170)
epoxy sealed
ORDER CODE
SD1899
PIN CONNE CT I O N
BRANDING
SD1899
DESCRIPTION
The SD1899 is a commonbasesiliconNPNbipolar
device optimized for 1.6 GHz SATCOM applications.
SD1899 offers superior gain and collector efficiency, making it an idealchoice for ClassC power
amplifiers used in portable as well as fixed SATCOM terminals.
ABSOL UTE MAXIMUM RATINGS (T
Symbol Parameter Valu e Unit
V
V
V
P
T
CBO
CES
EBO
I
C
DISS
T
J
STG
Collector-Base Voltage 45 V
Collector-EmitterVoltage 45 V
Emitter-Base Voltage 3.0 V
Device Current 3.5 A
Power Dissipation (+25°C) 64.8 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
1. Collector 3. Base
2. Emitter
65 to +150
−
°
C
°
C
THERMAL DATA
R
TH(j-c)
January 6, 1997 1/5
Junction-CaseThermal Resistance 2.7 °
C/W
SD 1899
ELECTRICAL SPECIFICATI ONS
(T
case
25°C)
=
STATIC
Symbol Test Conditions
BV
CBO IC = 8 mA IE = 0 mA
BV
CES IC = 8 mA VBE = 0 V
BV
EBO IE = 8 mA IC = 0 mA
I
CBO VCB = 28 V IE = 0 mA
h
FE VCE = 5 V IC = 1.6 A
DYNAMIC
Symbol Test Conditions
P
OUT
η
P
f = 1650 MHz VCC = 28 V PIN = 3.5 W
c f = 1650 MHz VCC = 28 V PIN = 3.5 W
f = 1650 MHz VCC = 28 V
G
Value
Min. Typ. Max.
Unit
45 — — V
45 — — V
3.0 — — V
——2mA
15 — 150 —
Value
Min. Typ. Max.
Unit
30 32 — W
45 50 — %
9.3 — — dB
2/5 January 6, 1997
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