SGS Thomson Microelectronics SD1898 Datasheet
.1.65 GHz
.28 VOLTS
.EFFICIENCY 40% MIN.
.CLASS C O PERATION
. CO MMON BASE
.P
OUT
32 W MIN. WITH 9 dB GAIN
=
SD1898
RF & MICROWAVE TRANSISTORS
1.6 GHz SATCOM APPLICAT IONS
.400 SQ. 2LF L (M186)
epoxy sealed
ORDER CODE
SD1898
PIN CONNECTION
BRANDING
1898
DESC RIPTION
The SD1898 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz
SATCOM applications. A gold metallized emitterballasted die geometry is employed providing high
gain and efficiency while ensuring long term reliability and ruggedness under severe operating
conditions. SD1898 is packaged in a cost-effective
epoxy sealed housing.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
V
V
P
T
CBO
CEO
EBO
I
C
DISS
T
J
STG
Collector-Base Voltage 45 V
Collector-Emitter Voltage 15 V
Emitter-Base Voltage 3.5 V
Device Current 7.8 A
Power Dissipation 87.5 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +150
−
°
C
°
C
THERMA L DATA
R
TH(j-c)
November 1992
Junction-Case Thermal Resistance 2.0 °C/W
1/4
SD1898
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CEOIC
BV
EBOIE
h
FE
= 10mA IE= 0mA 45 — — V
= 10mA IB= 0mA 12 — — V
= 10mA IC= 0mA 3.5 — — V
VCE= 5V IC= 2A 15 — 150 —
Value
Min. Typ. Max.
DYNAMIC
Symbol Test C ond itions
P
OUT
G
η
cf=1.65 GHz PIN= 4.0 W VCE= 28 V 40 — — %
f = 1.65 GHz PIN= 4.0 W VCE= 28 V 32 — — W
f = 1.65 GHz PIN= 4.0 W VCE= 28 V 9.0 — — dB
P
Value
Min. Typ. Max.
Uni t
Uni t
TYPICA L P ERFO R MA NCE
POWER OUTPU T vs POWER INPUT
EFFICIENCY vs POWER INPUT
2/4
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