SGS Thomson Microelectronics SD1897 Datasheet
.1.65 GHz
.28 VOLTS
.CLASS C OPERATION
. CO MMON BASE
.P
OUT
10 W MIN. WITH 11.0 dB GAIN
=
SD1897
RF & MICROWAVE TRANSISTORS
1.65 GHz SATCOM APPLICAT IONS
.250 x .320 2LF L (M170)
epoxy sealed
ORDER CODE
SD1897
PIN CONNECTION
BRANDING
1897
DESC RIPT ION
The SD1897 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz
SATCOM applications. A gold metallized emitterballasted die geometry is employed providing high
gain and efficiency while ensuring long term reliability and ruggedness under severe operating
conditions. SD1897 is packaged in a cost-effective
epoxy sealed housing.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
V
V
P
T
CBO
CEO
EBO
I
C
DISS
T
J
STG
Collector-Base Voltage 45 V
Collector-Emitter Voltage 15 V
Emitter-Base Voltage 3.5 V
Device Current 2.3 A
Power Dissipation 29 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
1. Collector 3. Base
2. Emitter
65 to +150
−
°
C
°
C
THERMA L DA TA
R
July 1993
TH(j-c)
Junction-Case Thermal Resistance 6.0 °C/W
1/4
SD1897
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CEOIC
BV
EBOIE
h
FE
= 3mA IE= 0mA 45 — — V
= 3mA IB= 0mA 12 — — V
= 3mA IC= 0mA 3.5 — — V
VCE= 5V IC= 600mA 15 — 150 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test C ond itions
P
OUT
G
η
cf=1.65 GHz PIN= 0.8 W VCE= 28 V 48 — — %
f = 1.65 GHz PIN= 0.8 W VCE= 28 V 10 — — W
f = 1.65 GHz PIN= 0.8 W VCE= 28 V 11 — — dB
P
Value
Min. Typ. Max.
TYPICA L PERFO R MA NCE
Unit
Unit
POWER OUTPUT vs POWER INPUT
EFFICIENCY vs POWER INPUT
2/4
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