SGS Thomson Microelectronics SD1895-03 Datasheet
RF & MICROWAVE TRANSISTORS
1.6 GHz SATCOM APPLICAT IONS
.1.65 GHz
.28 VOLTS
.OVERLAY D IE GEOMETRY
. ALL GOLD METALLIZED SYSTEM
.HIGH RELIABILITY AND RUGGEDNESS
.C O OMON BASE
. P
OUT
15 W MIN. WITH 9.2 dB GAIN
=
.250 x .320 2LF L (M170)
ORDER CODE
SD1895-03
PIN CONNECTION
SD1895-03
epoxy sealed
BRANDING
SD1895-3
DESC RIPT ION
The SD1895-03 is a28 V silicon NPN planar transistor designed for INMARSAT and other 1.6 GHz
SATCOM applications. This device utilizes polysilicon site ballasting with a gold metallized die
to achieve high reliability and ruggedness.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 45 V
Collector-Emitter Voltage 15 V
Emitter-Base Voltage 3.0 V
Device Current 3.0 A
Power Dissipation 37.2 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 4.7 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter
65 to +150
−
°
C
°
C
July 1993
1/4
SD1895-03
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
h
CBO
CEO
EBO
FE
IC= 5mA IE=0mA 45 — — V
IC= 5mA IB=0mA 12 — — V
IE= 5mA IC=0 mA 3.0 — — V
VCE= 5V IC=1A 15 — 150 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test C ond itions
P
OUT
G
P
η
cf=1.65 GHz PIN= 2.4 W VCE= 28 V 48 — — %
f = 1.65 GHz PIN= 2.4 W VCE= 28 V 20 — — W
f = 1.65 GHz PIN= 2.4 W VCE= 28 V 9.2 — — dB
Value
Min. Typ. Max.
TYPICA L PERFO R MA NCE
Unit
Unit
IMPEDANCE DATA
POWER OUTPUT vs POWER INPUT
2/4
FREQ. ZIN(Ω)Z
CL
(Ω)
1.65 GHz 17.0 + j 18.0 3.5 − j2.0
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