SGS Thomson Microelectronics SD1894 Datasheet
SATELLITE COMM UNICATI ON S APPLICATI ONS
CLASS C
.
1.6 GHz
.
COMMON BASE
.
REFRACTORY/GOLD METALLIZATION
.
EFFICIENCY = 50% MIN.
.
P
.
= 4.5 W MIN. WITH 10 dB GAIN
OUT
SD1894
RF & MICROWAVE TRANSISTORS
.250x.3202LFL(M170)
epoxy sealed
ORDER CODE
SD1894
PIN CONNECTION
DESCRIPTION
The SD1894 is a common base silicon NPN bipolar
device optimized for 1.6 GHz SATCOM applications.
The SD1894 offers superior gain and collector efficiency, making it an ideal choice for Class C power
amplifiers used in portable as well as fixed SATCOM terminals.
ABSOL UTE MA XI MUM RATI NGS (T
Symbol Parameter Valu e Unit
V
V
V
P
T
CBO
CES
EBO
I
C
DISS
T
J
STG
Collector-Base Voltage 45 V
Collector-EmitterVoltage 45 V
Emitter-Base Voltage 3.0 V
Device Current 375 mA
Power Dissipation 12.5 W
Junction Temperature +200
Storage Temperature
case
=
25°C)
1. Collector 3. Base
2. Emitter
− 65 to +150
BRANDING
SD1894
°
C
°
C
THERMAL DATA
R
TH(j-c)
February 4, 1997
Junction-CaseThermal Resistance 14.0 °
C/W
1/4
SD 1894
ELECTRICAL SPECIFICATIONS (T
case
STATIC
Symbol Test Conditions
BV
CBO
BV
BV
EBO
I
CBO
h
FE
IC= 1 mA IE=0mA
IC= 1 mA VBE=0V
CES
IE= 1 mA IC=0mA
VCB=28V IE=0mA
VCE=5V IC=.2A
DYNAMIC
Symbol Test Conditions
P
η
P
Load
f = 1650 MHz VCC=28V P
IN
f = 1650 MHz V
c
f = 1650 MHz VCC=28V P
G
=28V P
V
CC
=28V P
CC
= 4.5 W VSWR = 20:1
OUT
Mismatch
=
25°C)
OUT
OUT
OUT
= 4.5 W
= 4.5 W
= 4.5 W
Value
Min. Typ. Max.
Unit
45 — — V
45 — — V
3.0 — — V
——.25mA
15 — 150 —
Value
Min. Typ. Max.
Unit
— .35 .45 W
50 55 — %
10.0 11.1 — dB
No Degradation in
Output Power
INPUT POWER vs OUTPUT POWER
2/4
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