SGS Thomson Microelectronics SD1893-03 Datasheet
RF & MICROWAVE TRANSISTORS
1.6 GHZ SATCOM APPLICAT IONS
.1.65 GHz
.28 VOLTS
.OVERLAY D IE GEOMETRY
. GOLD METALLIZATION
.HIGH RELIABILITY AND RUGGEDNESS
.P
OUT
10 W MIN. WITH 11.0 dB GAIN
=
.COMMON BASE
ORDER CODE
SD1893-03
PIN CONNECTION
SD1893-03
.230 2LF L (M151)
hermetically sealed
BRANDING
1893-3
DESC RIPT ION
The SD1893-03 is a 28 V silicon NPN planar transistor designed for INMARSAT and other 1.6 GHz
SATCOM applications. The device utilizes polysilicon site ballasting with a gold metallized die
to achieve high reliability and ruggedness.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 45 V
Collector-Emitter Voltage 15 V
Emitter-Base Voltage 3.5 V
Device Current 4.4 A
Power Dissipation 43 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 5.5 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter
65 to +200
−
°
C
°
C
November 1992
1/5
SD1893-03
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
EBOIE
I
CBO
h
FE
= 3mA IE= 0mA 45 — — V
= 3mA IC= 0mA 3.5 — — V
VCB= 28V IE= 0mA — — 5 mA
VCE= 5V IC= 300mA 15 — 150 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test Cond iti ons
P
OUT
G
η
cf=1.65 GHz PIN= 0.6 W VCE= 28 V 45 — — %
C
OB
f = 1.65 GHz PIN= 0.6 W VCE= 28 V 10 — — W
f = 1.65 GHz PIN= 0.6 W VCE= 28 V 11 — — dB
P
f = 1 MHz VCB= 28 V — 19 — pF
Value
Min. Typ. Max.
Unit
Unit
2/5
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