SGS Thomson Microelectronics SD1891-03 Datasheet
RF & MICROWAVE TRANSISTORS
1.6 GHz SATCOM APPLICAT IONS
.1.65 GHz
.28 VOLTS
.GOLD METALLIZED SYSTEM
.POLYSILICON SI T E BALLASTING
. O VER LAY DIE GEOM ETRY
. HI GH RELIABILITY AND RUGGEDNESS
.P
OUT
5.0 W MIN. WITH 14.0 dB GAIN
=
ORDER CODE
SD1891-03
PIN CONNECTION
SD1891-03
.230 2LF L (M151)
hermetically sealed
BRANDING
1891-03
DESC RIPT ION
The SD1891-03 is a 28 V silicon NPN transistor
designed for INMARSAT and other 1.6 GHz SATCOM applications. This device utilizes polysilicon
site ballasting with a gold metallized die to achieve
high reliability and ruggedness.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 45 V
Collector-Emitter Voltage 15 V
Emitter-Base Voltage 3.5 V
Device Current 1.1 A
Power Dissipation 8.8 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 20.0 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter
65 to +200
−
°
C
°
C
March 1993
1/5
SD1891-03
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
EBOIE
I
CBO
h
FE
= 1mA IE= 0mA 45 — — V
= 1mA IC= 0mA 3.5 — — V
VCB= 24V IE= 0mA — — 0.5 mA
VCE= 5V IC= 100mA 15 — 150 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test Conditi ons
P
OUT
G
η
cf=1.65 GHz PIN= 200 mW VCE= 28 V 45 — — %
C
OB
f = 1.65 GHz PIN= 200 mW VCE= 28 V 5.0 — — W
f = 1.65 GHz PIN= 200 mW VCE= 28 V 14 — — dB
P
f = 1 MHz VCB= 28 V — 2.5 — pF
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER OUTPUT vs POWER INPUT
2/5
Loading...