SGS Thomson Microelectronics SD1888-03 Datasheet
.1.65 GHz
.28 VOLTS
.EFFICIENCY 50% MIN.
.CLASS C O PERATIO N
. CO MMON BASE
.INPUT/OUTPUT MATCHING
.P
OUT
24 W MIN. WITH 9.0 dB GAIN
=
SD1888-03
RF & MICROWAVE TRANSISTORS
1.6 GHz SATCOM APPLICAT IONS
.250 x .320 2LF L (M170)
epoxy sealed
ORDER CODE
SD1888-03
PIN CONNECTION
BRANDING
1888-3
DESC RIPTIO N
The SD1888-03 is a 28 V Class C silicon NPN
transistor designed for INMARSAT and other 1.65
GHz SATCOM applications. Agold metallized emitter-ballasted die geometry is employed providing
high gain and efficiency while ensuring long term
reliability and ruggedness under severe operating
conditions. SD1888-03 is packaged in a cost-effective epoxy sealed housing
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
V
V
P
T
CBO
CEO
EBO
I
C
DISS
T
J
STG
Collector-Base Voltage 45 V
Collector-Emitter Voltage 12 V
Emitter-Base Voltage 3.0 V
Device Current 2.6 A
Power Dissipation 50 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
1. Collector 3. Base
2. Emitter
65 to +150
−
°
C
°
C
THERMA L DA TA
R
July 1993
TH(j-c)
Junction-Case Thermal Resistance 3.5 °C/W
1/4
SD1888-03
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CEOIC
BV
EBOIE
h
FE
= 6mA IE=0mA 45 — — V
= 6mA IB=0mA 12 — — V
= 6mA IC=0 mA 3.0 — — V
VCE= 5V IC=1.2 A 15 — 150 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test C ond itions
P
OUT
G
η
cf=1.65 GHz PIN= 3.0 W VCE= 28 V 50 — — %
f = 1.65 GHz PIN= 3.0 W VCE= 28 V 24 — — W
f = 1.65 GHz PIN= 3.0 W VCE= 28 V 9.0 — — dB
P
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER OUTPUT & EFFICIENCY vs
POWER INPUT
2/4
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