SGS Thomson Microelectronics SD1855 Datasheet
RF & MICROWAVE TRANSISTORS
.2.0 GHz
.20 VOLTS
.CLASS A
.OVERLAY GEOMETRY
.GOLD METALLIZED DIE
.COMMON EMITTER CONFIGURATION
.P
= 2.5W MIN. WITH 6.0 dB GAIN
OUT
SD1855 (TCC20L25)
.230 2LFL (M151)
hermetically sealed
ORDER CO DE
SD1855
PIN CONNECTION
BRANDING
TCC20L25
GENERAL PURPOSE LINEAR APPLICATIONS
DESCRIPTION
The SD1855 is a silicon NPN planar transistor
designed for high gain linear performance at 2.0
GHz. This part uses gold metallized die and polysilicon site balla sting to achieve high rel iability and
ruggedness. The SD1855 can be used for applications suc ha as telecommu nicati ons, rada r, ECM,
space and other c ommer cial and militar y systems.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMAL DATA
R
TH(j-c)
Collector-Base Voltage 40 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 3.5 V
Device Current 0.5 A
Power Dissipation 20.6 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 8.5 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base
65 to +150
−
°
C
°
C
November 1992
1/3
SD1855 (TCC20L25)
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
CBOIC
BV
CEOIC
BV
EBOIE
h
FE
= 2mA IE = 0mA 40 — — V
= 5mA IB = 0mA 25 — — V
= 2mA IC = 0mA 3.5 — — V
VCE = 5V IC = 400mA 15 — 150 —
Min. Typ. Max.
Valu e
DYNAMIC
Symbol Test Conditi ons
P
*f = 2.0 GHz VCE = 20 V ICQ = 440 mA 2.5 — — W
OUT
Value
Min. Typ. Max.
GP*f = 2.0 GHz VCE = 20 V ICQ = 440 mA 6.0 — — dB
Note: * 1dB Compre ssi on
Unit
Unit
2/3
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